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MT9V127IA3XTC-DR1

Onsemi

MT9V127IA3XTC-DR1 by Onsemi

MT9V127IA3XTC-DR1 by Onsemi is a 5.60x5.60 um CMOS image sensor with 680H x 512V pixels, offering a dynamic range of 74.6 dB and operating at temperatures from -30 to 70 °C. It features a digital current output interface, suitable for applications requiring a frame rate of up to 30 fps in surface mount configurations.

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Digiode

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AZTECH Wire

Italy . 1,015 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

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UHIMA Technologies

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Problanco Electronics

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Overview

Unleash the power of crystal-clear imaging with the MT9V127IA3XTC-DR1 from Onsemi. As a leading manufacturer in image sensors, Onsemi delivers top-notch quality with cutting-edge technology. Ideal for a wide range of applications, this image sensor provides unparalleled value with its high performance and reliability. Capture every detail with precision and clarity, thanks to the advanced features of this product. Elevate your imaging experience and stay ahead of the competition with the MT9V127IA3XTC-DR1 by Onsemi.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

With a small pixel size, this image sensor can capture fine details and produce high-resolution images.

Maximum Supply Voltage: 1.9 V

The ability to operate at a maximum supply voltage of 1.9V ensures compatibility with a wide range of applications and power sources.

Master Clock: 27 MHz

A high master clock frequency of 27 MHz enables fast and efficient data processing, making this image sensor suitable for applications requiring real-time image capture.

Body Width: 9 inch

The compact body width of 9 inches allows for easy integration into various devices and applications without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

As a CMOS image sensor, this product offers low power consumption, high sensitivity, and improved image quality compared to CCD sensors.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage requirement of 1.7V helps in reducing power consumption and extending the battery life of devices using this image sensor.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this image sensor is suitable for use in a wide range of environments without overheating.

Horizontal Pixel: 680

The high horizontal pixel count of 680 ensures detailed and sharp images with excellent resolution.

Output Type: DIGITAL CURRENT

The digital current output type simplifies data processing and integration with digital systems, providing accurate and reliable image data.

Minimum Operating Temperature: -30 °C

The ability to operate at a minimum temperature of -30 °C ensures reliable performance even in cold or harsh environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish of Tin/Silver/Copper provides robust and reliable connections, ensuring stable operation and longevity of the image sensor.

Maximum Operating Current: 50 mA

With a maximum operating current of 50 mA, this image sensor is energy-efficient and does not draw excessive power during operation.

Dynamic Range: 74.6 dB

A high dynamic range of 74.6 dB allows this image sensor to capture a wide range of brightness levels, resulting in detailed and accurate image reproduction.

Vertical Pixel: 512

The vertical pixel count of 512 ensures optimal image resolution and clarity for various applications such as surveillance, automotive, and industrial imaging.

Body Length/Diameter: 9 mm

The compact body length/diameter of 9 mm makes this image sensor ideal for space-constrained applications and devices.

Optical Format (inch): 1/4

The optical format of 1/4 inch provides compatibility with a wide range of lenses and optical systems, allowing for versatile use in different imaging setups.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections, preventing signal loss and maintaining signal integrity for consistent image quality.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface type simplifies connectivity and communication with external systems, enabling easy integration and control of the image sensor.

Frame Rate: 30 fps

With a high frame rate of 30 fps, this image sensor can capture smooth and fluid motion in videos, making it suitable for applications requiring fast-moving object tracking.

Array Type: FRAME

The frame array type enables simultaneous capture of multiple image frames, increasing efficiency and reducing lag in image processing.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation and integration of the image sensor onto circuit boards or PCBs, allowing for easy assembly and manufacturing.

Technical Specifications

Image Sensors MT9V127IA3XTC-DR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.66-2.94 V

Array Type:

FRAME

Body Width:

9 inch

Body Length/Diameter:

9 mm

Dynamic Range:

74.6 dB

Frame Rate:

30 fps

Horizontal Pixel:

680

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

512

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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