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MT9V032C12STC-DR

Onsemi

MT9V032C12STC-DR by Onsemi

The Onsemi MT9V032C12STC-DR is an image sensor with 6x6 um pixel size, 26.6 MHz master clock, and 752 horizontal pixels. Ideal for applications requiring a digital current output interface, such as frame arrays in cameras or surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 5,142 parts In-Stock

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Digiode

USA . 1,732 parts In-Stock

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AZTECH Wire

Italy . 513 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,429 parts In-Stock

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SupplyDigital Components

Austria . 5,415 parts In-Stock

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Kulean Microsystems

USA . 4,760 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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Problanco Electronics

Mexico . 2,102 parts In-Stock

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UHIMA Technologies

Türkiye . 481 parts In-Stock

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Corohmni

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Kepictronics

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TANS Electronics

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Overview

Enhance your imaging solutions with the MT9V032C12STC-DR Image Sensor by Onsemi. Known for their superior quality and cutting-edge technology, Onsemi delivers top-of-the-line products in the image sensor category. This versatile sensor offers high performance and reliability, making it ideal for a wide range of applications. From security cameras to automotive systems, this sensor provides exceptional value, delivering crisp and clear images with ease. Upgrade your projects with the MT9V032C12STC-DR and experience the benefits of superior imaging technology.

Feature Benefit Bullets

Pixel Size (um) 6X6

Smaller pixel size results in higher resolution and better image quality.

Maximum Supply Voltage 3.6 V

Allows for higher voltage input which can improve performance and signal-to-noise ratio.

Master Clock 26.6 MHz

Higher clock speed enables faster data processing and higher frame rates.

Body Width 11.43 inch

Compact size makes it suitable for small devices or systems.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensors have low power consumption and high integration level, making them ideal for various applications.

Body Height 2.3 mm

Low profile design allows for easy integration into slim devices or modules.

Package Shape or Style SQUARE

Square shape provides easier mounting and alignment during assembly.

Minimum Supply Voltage 3 V

Lower minimum supply voltage helps in reducing power consumption and heat generation.

Maximum Operating Temperature 70 °C

Wide operating temperature range ensures reliability in various environmental conditions.

Horizontal Pixel 752

Higher pixel count enables capturing more details in images and videos.

Output Range -9-9mA

Wide output range allows for flexibility in signal processing and adjustment.

Output Type DIGITAL CURRENT

Digital current output simplifies interface with other digital systems or processors.

Minimum Operating Temperature -30 °C

Low minimum operating temperature ensures functionality in extreme cold environments.

Maximum Operating Current 60 mA

Moderate operating current ensures efficient power usage and avoids overheating.

Housing CERAMIC

Ceramic housing provides durability and protection for the sensor components.

Dynamic Range 54.4 dB

Wide dynamic range allows for capturing both bright and dark areas in high detail.

Vertical Pixel 480

Vertical pixel count complements the horizontal resolution for better image quality.

Body Length/Diameter 11.43 mm

Compact size and shape make it suitable for various applications and mounting options.

Optical Format (inch) 1/3

Standard optical format ensures compatibility with different lenses and systems.

Termination Type SOLDER

Solder termination provides secure and reliable electrical connections during assembly.

Output Interface Type 2-WIRE INTERFACE

Two-wire interface simplifies communication with external devices or systems.

Frame Rate 60 fps

High frame rate allows for smooth video recording and fast-moving object tracking.

Array Type FRAME

Frame array enhances image quality and processing speed for various applications.

Mounting Feature SURFACE MOUNT

Surface mount capability makes installation and integration easier in compact systems or devices.

Technical Specifications

Image Sensors MT9V032C12STC-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER, IT ALSO HAVE DYNAMIC RANGE 80 DB-100 DB IN HDR MODE

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Housing:

CERAMIC

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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