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MT9V024D00XTRC13CC1-200

Onsemi

MT9V024D00XTRC13CC1-200 by Onsemi

The Onsemi MT9V024D00XTRC13CC1-200 is an image sensor with 6x6 um pixel size, 27 MHz master clock, and 752 horizontal pixels. It operates at a max supply voltage of 3.6 V and is suitable for applications requiring high-resolution imaging in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,120 parts In-Stock

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Digiode

USA . 1,267 parts In-Stock

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AZTECH Wire

Italy . 582 parts In-Stock

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$17.140

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Perfect Parts

USA . 16,671 parts In-Stock

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TANS Electronics

Latvia . 7,313 parts In-Stock

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SupplyDigital Components

Austria . 5,192 parts In-Stock

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Problanco Electronics

Mexico . 4,002 parts In-Stock

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Corphita

USA . 1,183 parts In-Stock

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UHIMA Technologies

Türkiye . 539 parts In-Stock

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Corohmni

South Africa . 440 parts In-Stock

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Kulean Microsystems

USA . 363 parts In-Stock

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Overview

Capture the world in stunning detail with the MT9V024D00XTRC13CC1-200 by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers top-notch quality and reliability. This sensor is perfect for a wide range of applications, from security cameras to medical imaging equipment. With a maximum supply voltage of 3.6V and a dynamic range of 100dB, this sensor offers unmatched performance. Experience crisp images with 752 horizontal pixels and 480 vertical pixels. Invest in the MT9V024D00XTRC13CC1-200 today and elevate your imaging capabilities to new heights.

Feature Benefit Bullets

Pixel Size (um): 6X6

Small pixel size allows for high resolution and detailed image capture.

Maximum Supply Voltage: 3.6 V

Wide voltage range ensures compatibility with various power sources.

Master Clock: 27 MHz

High clock frequency enables fast processing and data transfer.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology provides low power consumption and high quality imaging.

Body Height: 0.2 mm

Compact design allows for easy integration into different devices.

Minimum Supply Voltage: 3 V

Low minimum voltage requirement helps in energy efficiency.

Maximum Operating Temperature: 105 °C

Wide temperature range allows for operation in various environmental conditions.

Horizontal Pixel: 752

High number of pixels provides detailed and sharp images.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and transmission.

Minimum Operating Temperature: -40 °C

Low operating temperature allows for use in extreme cold environments.

Maximum Operating Current: 60 mA

Low operating current consumption helps in energy efficiency.

Dynamic Range: 100 dB

Wide dynamic range captures both bright and dark areas accurately.

Vertical Pixel: 480

High vertical pixel count adds to the overall image detail and clarity.

Optical Format (inch): 1/3

Standard optical format for compatibility with various lenses and systems.

Output Interface Type: 2-WIRE INTERFACE

Simple 2-wire interface for easy connectivity and communication.

Frame Rate: 60 fps

High frame rate ensures smooth and real-time video recording.

Array Type: FRAME

Array type design allows for easy assembly and integration into devices.

Technical Specifications

Image Sensors MT9V024D00XTRC13CC1-200 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Height:

.2 mm

Dynamic Range:

100 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Master Clock:

27 MHz

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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