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MT9V022IA7ATC-DR1

Onsemi

MT9V022IA7ATC-DR1 by Onsemi

MT9V022IA7ATC-DR1 by Onsemi is an image sensor with 6x6 um pixel size, 752 horizontal pixels, and 480 vertical pixels. It operates at a max supply voltage of 3.6 V and has a frame rate of 60 fps. Ideal for applications requiring high-resolution imaging in devices such as cameras and surveillance systems.

Median Price

$20.921

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 32 parts In-Stock

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$20.921

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32

$20.921

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Vyrian

USA . 8,910 parts In-Stock

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8,910

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Digiode

USA . 511 parts In-Stock

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511

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 489 parts In-Stock

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$11.068

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489

$11.068

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Ampacity Inc.

Singapore . 1,638 parts In-Stock

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$16.750

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1,638

$16.750

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Corohmni

South Africa . 293 parts In-Stock

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$20.503

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293

$20.503

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TANS Electronics

Latvia . 6,149 parts In-Stock

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Problanco Electronics

Mexico . 5,283 parts In-Stock

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SupplyDigital Components

Austria . 5,038 parts In-Stock

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Corphita

USA . 1,713 parts In-Stock

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UHIMA Technologies

Türkiye . 848 parts In-Stock

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Kulean Microsystems

USA . 201 parts In-Stock

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Overview

Discover the exceptional quality and innovation of the MT9V022IA7ATC-DR1 image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi's image sensors are trusted for their precision and reliability. Ideal for a wide range of applications, this product offers customers unparalleled value and benefits. Enhance your imaging solutions with the MT9V022IA7ATC-DR1 and experience superior performance and advanced features that will take your projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 6X6

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage: 3.6 V

Operates efficiently within a safe voltage range, ensuring reliable performance.

Master Clock: 26.6 MHz

High master clock frequency enables fast data processing and image capture.

Body Width: 9 inch

Compact size makes for easy integration into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Uses CMOS technology for high sensitivity and low noise in image capture.

Body Height: 1.3 mm

Slim profile allows for versatile placement in different applications.

Package Shape or Style: SQUARE

Square packaging provides efficient use of space and easy alignment during installation.

Minimum Supply Voltage: 3 V

Low minimum supply voltage helps in saving power and extending battery life.

Maximum Operating Temperature: 85 °C

High operating temperature range ensures reliability in various environmental conditions.

Horizontal Pixel: 752

Higher horizontal pixel count allows for wider and detailed image capture.

Output Range: -9-9mA

Wide output range provides flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL CURRENT

Digital current output simplifies signal processing and integration with digital circuits.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Durable terminal finish provides reliable connections for long-term use.

Maximum Operating Current: 60 mA

Capable of handling high operating current for efficient performance.

Dynamic Range: 54.4 dB

Wide dynamic range allows for capturing both bright and dark areas in the same image.

Vertical Pixel: 480

Vertical pixel count offers balanced image resolution for various applications.

Body Length/Diameter: 9 mm

Compact body size for easy installation and integration in confined spaces.

Optical Format (inch): 1/3

1/3 inch optical format provides compatibility with standard lens systems.

Termination Type: SOLDER

Solder termination for secure and reliable electrical connections.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies communication with external devices or systems.

Frame Rate: 60 fps

High frame rate enables smooth and real-time image capture for various applications.

Array Type: FRAME

Frame array type allows for efficient capture of images in a structured grid pattern.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure installation on PCBs or other surfaces.

Technical Specifications

Image Sensors MT9V022IA7ATC-DR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 3-3.60 V, IT ALSO HAVE DYNAMIC RANGE 80DB-100DB IN HIDY MODE

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e1

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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