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AR0135CS2M00SUD20

Onsemi

AR0135CS2M00SUD20 by Onsemi

Onsemi's AR0135CS2M00SUD20 is a 1/3-inch CMOS image sensor with 1280x960 resolution. It operates at -30 to 70 °C, with a pixel size of 3.75μm and a max supply voltage of 1.95V. Ideal for applications requiring high-quality digital imaging at up to 54 fps.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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Native Components

USA . 107 parts In-Stock

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Northwest PG Solutions

USA . 1,835 parts In-Stock

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AZTECH Wire

Italy . 1,056 parts In-Stock

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TANS Electronics

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Problanco Electronics

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Kulean Microsystems

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Corphita

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UHIMA Technologies

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SupplyDigital Components

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Corohmni

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Overview

Capture every moment with the AR0135CS2M00SUD20 image sensor by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers exceptional products that exceed expectations. This image sensor is perfect for a wide range of applications, from security cameras to automotive systems. With its high performance and advanced features, the AR0135CS2M00SUD20 offers unparalleled value, providing customers with crisp, clear images and seamless functionality. Experience the difference with Onsemi's cutting-edge technology in the AR0135CS2M00SUD20 image sensor.

Feature Benefit Bullets

Pixel Size (um): 3.75

The small pixel size of 3.75um allows for high resolution and sharp images to be captured by the image sensor.

Maximum Supply Voltage: 1.95 V

With a maximum supply voltage of 1.95V, the image sensor can be efficiently powered while still providing optimal performance.

Master Clock: 50 MHz

The high master clock frequency of 50 MHz enables fast and accurate data processing in real-time, making this image sensor suitable for applications requiring quick response times.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

Being a CMOS image sensor, this product offers low power consumption, high sensitivity, and noise reduction capabilities, making it an excellent choice for imaging applications.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage of 1.7V ensures energy efficiency and extends the battery life of devices utilizing this image sensor.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this image sensor can withstand harsh environmental conditions and is suitable for use in a wide range of applications.

Horizontal Pixel: 1280

The high horizontal pixel count of 1280 contributes to the image sensor's high-resolution output, allowing for detailed and clear images to be captured.

Output Range: 0.40-1.50V

The wide output voltage range of 0.40-1.50V provides flexibility in signal processing and can accommodate different input levels, making this image sensor versatile in various applications.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies signal processing and integration with other digital systems, enhancing the usability and compatibility of this image sensor.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature of -30 °C allows for reliable performance even in extreme cold environments, making this image sensor suitable for use in diverse conditions.

Maximum Operating Current: 90 mA

With a maximum operating current of 90mA, this image sensor maintains efficient power consumption while delivering consistent and reliable performance.

Dynamic Range: 71.1 dB

The high dynamic range of 71.1dB ensures accurate and detailed image capture in both bright and dark conditions, making this image sensor ideal for applications requiring high-quality images.

Vertical Pixel: 960

The vertical pixel count of 960 complements the high horizontal pixel count, further enhancing the image sensor's resolution and image quality for superior visual output.

Optical Format (inch): 1/3

The optical format of 1/3 inch strikes a balance between compact size and high image quality, making this image sensor suitable for use in a variety of devices with size constraints.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with external devices, enabling easy integration and control of this image sensor in different applications.

Frame Rate: 54 fps

With a fast frame rate of 54 frames per second, this image sensor can capture smooth and seamless videos, making it ideal for applications that require high-speed recording.

Array Type: FRAME

The frame array type ensures uniform and consistent image capture across the sensor, resulting in high-quality output with minimal distortion or artifacts, making this image sensor reliable for various imaging tasks.

Technical Specifications

Image Sensors AR0135CS2M00SUD20 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.5 V TO 3.1 V

Array Type:

FRAME

Dynamic Range:

71.1 dB

Frame Rate:

54 fps

Horizontal Pixel:

1280

Master Clock:

50 MHz

Maximum Operating Current:

90 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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