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AR0132AT6C00XPEA0-DRBR1

Onsemi

AR0132AT6C00XPEA0-DRBR1 by Onsemi

Onsemi's AR0132AT6C00XPEA0-DRBR1 is a 1/3" CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 115dB dynamic range. Ideal for applications requiring high-quality digital imaging at up to 60fps, such as surveillance cameras and industrial machine vision systems.

Median Price

$19.440

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 41,424 parts In-Stock

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Verical

USA . 4,370 parts In-Stock

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$24.300

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$21.738

10k+ parts

$20.462

4,370

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$24.300

$21.738

$20.462

Rochester

USA . 4,370 parts In-Stock

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$19.440

1k+ parts

$17.390

10k+ parts

$16.370

4,370

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$19.440

$17.390

$16.370

Arrow

USA . 68 parts In-Stock

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$17.560

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68

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$17.560

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Distributors (In-Stock)

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Digiode

USA . 1,810 parts In-Stock

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$20.568

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$20.568

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Flip Electronics

USA . 27,775 parts In-Stock

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Vyrian

USA . 5,537 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 464 parts In-Stock

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$0.058

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$0.056

464

$0.058

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$0.056

AZTECH Wire

Italy . 1,201 parts In-Stock

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$15.900

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$15.900

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Corphita

USA . 245 parts In-Stock

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$19.485

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245

$19.485

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Corohmni

South Africa . 148 parts In-Stock

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$20.194

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SupplyDigital Components

Austria . 8,209 parts In-Stock

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TANS Electronics

Latvia . 6,826 parts In-Stock

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Problanco Electronics

Mexico . 6,093 parts In-Stock

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Perfect Parts

USA . 4,113 parts In-Stock

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Kulean Microsystems

USA . 3,884 parts In-Stock

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Northwest PG Solutions

USA . 1,760 parts In-Stock

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UHIMA Technologies

Türkiye . 635 parts In-Stock

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635

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Overview

Capture every moment in stunning clarity with the AR0132AT6C00XPEA0-DRBR1 image sensor from Onsemi. As a leader in the industry, Onsemi delivers top-quality products that exceed expectations. Ideal for applications such as automotive cameras, security systems, and industrial imaging, this image sensor offers unparalleled value with its high performance, wide dynamic range, and versatile output interface. Trust Onsemi to provide you with the best technology for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 3.75

The small pixel size allows for high resolution images to be captured with detail and clarity.

Maximum Supply Voltage: 1.95 V

A higher maximum supply voltage ensures stable and reliable operation of the image sensor.

Master Clock: 50 MHz

The high master clock frequency enables fast data processing and high-speed performance of the image sensor.

Body Width: 9 inch

The compact body width makes it suitable for integration into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors offer low power consumption, high sensitivity, and excellent image quality, making them a popular choice for electronic devices.

Body Height: 1.4 mm

The slim body height allows for a compact design and easy integration of the image sensor into small devices.

Package Shape or Style: SQUARE

The square package shape provides versatility in mounting options and compatibility with various device layouts.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage ensures energy efficiency and extends the battery life of devices using the image sensor.

Maximum Operating Temperature: 105 °C

The wide operating temperature range makes the image sensor suitable for use in various environmental conditions.

Horizontal Pixel: 1280

A high horizontal pixel count results in detailed and sharp images with excellent resolution.

Output Range: 0.40-1.50V

The wide output range provides flexibility in signal processing and compatibility with different circuit configurations.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and ensures accurate data transmission from the image sensor.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the image sensor to function reliably even in cold environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish materials provide good conductivity, durability, and resistance to corrosion, ensuring long-term reliability of the image sensor.

Maximum Operating Current: 130 mA

The low maximum operating current contributes to energy efficiency and reduces power consumption during operation.

Dynamic Range: 115 dB

A high dynamic range allows the image sensor to capture a wide range of light intensities, resulting in images with rich details and accurate colors.

Vertical Pixel: 960

A high vertical pixel count contributes to the overall image resolution and quality captured by the image sensor.

Body Length/Diameter: 9 mm

The compact body length or diameter enables easy integration and installation of the image sensor in various devices.

Optical Format (inch): 1/3

The 1/3 inch optical format is a common size for image sensors, offering a good balance between image quality and sensor size.

Termination Type: SOLDER

The solder termination type provides a secure and reliable connection for the image sensor, ensuring stable operation over time.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies the connection and communication with other components or devices, enhancing the overall usability of the image sensor.

Frame Rate: 60 fps

A high frame rate of 60 frames per second allows the image sensor to capture fast-moving objects or scenes with smooth and clear motion.

Array Type: LINEAR

A linear array type helps in capturing images with consistent quality and resolution across the entire image frame.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation and integration of the image sensor onto PCBs or electronic devices.

Technical Specifications

Image Sensors AR0132AT6C00XPEA0-DRBR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1 V; ELECTRONIC ROLLING SHUTTER

Array Type:

LINEAR

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

115 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

130 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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