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50 MHz Small Signal Bipolar Junction Transistors (BJT) 88

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPSA92G by Onsemi

MPSA92G

Onsemi

MPSA92G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 25, and VCE of 300V. Ideal for amplifier applications due to its single configuration and cylindrical package style.

.5 A

300 V

SINGLE

25

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSW01ARLRAG by Onsemi

MPSW01ARLRAG

Onsemi

MPSW01ARLRAG by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and max collector current of 1A. Ideal for applications requiring a single configuration transistor with a min DC current gain of 50 (hFE), operating up to 150 °C.

1 A

40 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW01ARLRPG by Onsemi

MPSW01ARLRPG

Onsemi

MPSW01ARLRPG by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and max collector-emitter voltage of 40V. Ideal for applications requiring a single configuration transistor with a min DC current gain of 50 (hFE), operating up to 150 °C, and featuring a nominal transition frequency of 50MHz.

1 A

40 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW06G by Onsemi

MPSW06G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

60

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSW06RLRAG by Onsemi

MPSW06RLRAG

Onsemi

MPSW06RLRAG by Onsemi is a NPN BJT transistor with 80V VCEO, 0.5A IC, and 1W Ptot. Ideal for amplifier applications due to its hFE of 60 and fT of 50MHz. Packaged in cylindrical form with through-hole terminals for easy integration.

.5 A

80 V

SINGLE

60

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSW56RLRAG by Onsemi

MPSW56RLRAG

Onsemi

MPSW56RLRAG by Onsemi is a PNP BJT with 80V VCEO, 50MHz fT, and 1W power dissipation. Ideal for amplifier applications due to its single configuration and hFE of 50. Its through-hole terminals and cylindrical package make it suitable for various electronic designs.

.5 A

80 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSA42RL1G by Onsemi

MPSA42RL1G

Onsemi

MPSA42RL1G by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for low-power applications, it has a max power dissipation of 1.5W and operates b/w -55°C to 150°C. The through-hole package with tin silver copper finish makes it suitable for various electronic designs.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSA42RLRAG by Onsemi

MPSA42RLRAG

Onsemi

MPSA42RLRAG by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 40, and VCE of 300V. Ideal for applications requiring high voltage switching in through-hole configurations at up to 150°C operating temperature.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSA42RLRFG by Onsemi

MPSA42RLRFG

Onsemi

MPSA42RLRFG by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 1.5W Ptot. Ideal for low-power applications, it has hFE of 40 and fT of 50MHz. Its through-hole package makes it suitable for various electronic designs.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSA42ZL1G by Onsemi

MPSA42ZL1G

Onsemi

MPSA42ZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and VCE of 300V. Ideal for applications requiring high collector current (0.5A), it operates up to 150°C and has a transition frequency of 50MHz.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSA43G by Onsemi

MPSA43G

Onsemi

MPSA43G by Onsemi is a NPN BJT with 200V VCEO, 50MHz fT, and 1.5W Ptot. Ideal for low-power applications, it features hFE of 40 and operates up to 150°C. Commonly used in signal amplification due to its small signal capabilities in through-hole package.

.05 A

200 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSA43RLRAG by Onsemi

MPSA43RLRAG

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .05 A;

.05 A

200 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSA92RL1G by Onsemi

MPSA92RL1G

Onsemi

MPSA92RL1G by Onsemi is a PNP BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for low-power applications requiring high DC current gain and operating temperatures from -55 to 150 °C. Package style: Cylindrical, terminals: Through-hole, suitable for various electronic designs.

.5 A

300 V

SINGLE

25

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSA92ZL1G by Onsemi

MPSA92ZL1G

Onsemi

MPSA92ZL1G by Onsemi is a PNP BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high DC current gain and low power dissipation of 1.5W. The through-hole package with bottom terminal position makes it easy to integrate into circuit designs.

.5 A

300 V

SINGLE

25

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSA93G by Onsemi

MPSA93G

Onsemi

MPSA93G by Onsemi is a PNP BJT with 200V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for low-power applications, it has a min hFE of 25 and operates up to 150 °C. Commonly used in signal amplification circuits due to its high transition frequency of 50MHz.

.5 A

200 V

SINGLE

25

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSA93RLRMG by Onsemi

MPSA93RLRMG

Onsemi

MPSA93RLRMG by Onsemi is a PNP BJT with 200V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for small signal applications in electronics due to its hFE of 25, fT of 50MHz, and operating temperature up to 150 °C. Package style is cylindrical with through-hole terminals.

.5 A

200 V

SINGLE

25

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW01AG by Onsemi

MPSW01AG

Onsemi

MPSW01AG by Onsemi is a NPN BJT transistor with 3 terminals, capable of handling up to 1A collector current and 2.5W power dissipation. With a min DC current gain of 50, it operates at temperatures up to 150 °C. Ideal for applications requiring high-speed switching in electronic circuits.

1 A

40 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW01G by Onsemi

MPSW01G

Onsemi

MPSW01G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and hFE of 50. Ideal for applications requiring a max collector-emitter voltage of 30V, such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: Sn/Ag/Cu, and max operating temp: 150°C make it versatile for various projects.

1 A

30 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

2.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SILICON

50 MHz

MSC2712YT1G by Onsemi

MSC2712YT1G

Onsemi

MSC2712YT1G by Onsemi is a NPN BJT transistor with 120 min hFE, 50 MHz fT, and 150 °C max operating temp. Ideal for amplifier applications due to its 0.2W power dissipation, 0.1A max IC, and 50V max VCE. It comes in a small outline package with Gull Wing terminals for surface mount assembly.

.1 A

50 V

SINGLE

120

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

50 MHz

2N5088G by Onsemi

2N5088G

Onsemi

2N5088G by Onsemi is a NPN BJT with max. power dissipation of 0.35W, hFE of 350, and max. collector-emitter voltage of 30V. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. operating temp. of 150°C in a cylindrical package with through-hole terminals.

LOW NOISE

.05 A

30 V

SINGLE

350

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

2N5088RLRAG by Onsemi

2N5088RLRAG

Onsemi

2N5088RLRAG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 350, and max. collector-emitter voltage of 30V. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. operating temp. of 150 °C in a cylindrical package style.

LOW NOISE

.05 A

30 V

SINGLE

350

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

BDC01DRL1G by Onsemi

BDC01DRL1G

Onsemi

BDC01DRL1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 1W, hFE of 25, and VCEO of 100V. With a package style of cylindrical and operating temp up to 150 °C, it offers high performance in various electronic circuits.

EUROPEAN PART NUMBER

.5 A

100 V

SINGLE

25

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

BF393G by Onsemi

BF393G

Onsemi

BF393G by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for low-power applications requiring high DC current gain and operating up to 150 °C. Package: PLASTIC/EPOXY, CYLINDRICAL shape with THROUGH-HOLE terminals.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

BF493SG by Onsemi

BF493SG

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

350 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MMBTA43LT1G by Onsemi

MMBTA43LT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A;

.5 A

200 V

SINGLE

40

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

50 MHz

MMBTA93LT1G by Onsemi

MMBTA93LT1G

Onsemi

MMBTA93LT1G by Onsemi is a PNP BJT transistor with 200V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its GULL WING terminals and compact SMALL OUTLINE package make it suitable for surface mount designs.

.5 A

200 V

SINGLE

25

TO-236

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

50 MHz

MPS6727G by Onsemi

MPS6727G

Onsemi

MPS6727G by Onsemi is a PNP BJT with 1W power dissipation, 40V max. collector-emitter voltage, and 50MHz transition frequency. Ideal for amplifier applications due to its single configuration and through-hole terminal form in a cylindrical package style.

1 A

40 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPS6729G by Onsemi

MPS6729G

Onsemi

MPS6729G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 1W, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its single configuration and silicon element material, operating at up to 150 °C with a min DC current gain of 50 (hFE).

.5 A

80 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSA56RLRPG by Onsemi

MPSA56RLRPG

Onsemi

MPSA56RLRPG by Onsemi is a PNP BJT with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 100. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. power dissipation of 0.625W in a cylindrical package style.

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSA56ZL1G by Onsemi

MPSA56ZL1G

Onsemi

MPSA56ZL1G by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.5A, ideal for amplifier applications. It has a min. DC current gain of 100, operates up to 150 °C, and features a cylindrical package style for through-hole mounting.

EUROPEAN PART NUMBER

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSW05G by Onsemi

MPSW05G

Onsemi

The Onsemi MPSW05G is a NPN BJT transistor with 60V VCEO, 0.5A IC, and 1W Ptot. Ideal for amplifier applications due to its hFE of 60 and fT of 50MHz. Packaged in a cylindrical shape with through-hole terminals for easy installation.

.5 A

60 V

SINGLE

60

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSW51G by Onsemi

MPSW51G

Onsemi

MPSW51G by Onsemi is a PNP BJT with 1W power dissipation, 30V max collector-emitter voltage, and 50MHz transition frequency. Ideal for low-power applications requiring high DC current gain in a cylindrical package with through-hole terminals.

1 A

30 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW51AG by Onsemi

MPSW51AG

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW51ARLRAG by Onsemi

MPSW51ARLRAG

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

MPSW51ARLRPG by Onsemi

MPSW51ARLRPG

Onsemi

MPSW51ARLRPG by Onsemi is a PNP BJT with 1W power dissipation, hFE of 50, and max. collector-emitter voltage of 40V. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and max. operating temp. of 150°C. Package style: cylindrical, terminals: through-hole with tin silver copper finish.

1 A

40 V

SINGLE

50

TO-226

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

STX715-AP by STMicroelectronics

STX715-AP

STMicroelectronics

STX715-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for efficient circuit designs in compact spaces.

1.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.9 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

50 MHz

PBHV9050Z/ZLX by Nexperia

PBHV9050Z/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .25 A; Terminal Form: GULL WING;

COLLECTOR

.25 A

500 V

SINGLE

70

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

PZTA42/ZLX by Nexperia

PZTA42/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;

COLLECTOR

.5 A

300 V

SINGLE

40

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

50 MHz

PZTA92/ZLX by Nexperia

PZTA92/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 4;

COLLECTOR

.1 A

300 V

SINGLE

25

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

FCX458QTA by Diodes Incorporated

FCX458QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .225 A;

COLLECTOR

.225 A

5 pF

400 V

SINGLE

15

R-PSSO-F3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

SINGLE

SILICON

50 MHz

.5 V