Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2SK2917(F)
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 18 A;
SINGLE
18 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
90 W
FET General Purpose Power
NO
2SK2995(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
30 A
2SK4066-DL-E
Onsemi
The Onsemi 2SK4066-DL-E is a N-CHANNEL Power FET with 100A max drain current and 90W max power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
100 A
e6
YES
Tin/Bismuth (Sn/Bi)
2SK4065-DL-E
The Onsemi 2SK4065-DL-E is a N-CHANNEL Power FET with 100A max drain current and 90W max power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
STI16N65M5
STMicroelectronics
STI16N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 48A IDM, and 0.279 ohm RDS(on). Ideal for SWITCHING applications due to its 90W power dissipation and ENHANCEMENT MODE operation. Package style is IN-LINE with PLASTIC/EPOXY body material.
ULTRA-LOW RESISTANCE
200 mJ
SINGLE WITH BUILT-IN DIODE
650 V
12 A
.279 ohm
TO-262AA
R-PSIP-T3
e3
3
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
48 A
Not Qualified
Matte Tin (Sn)
THROUGH-HOLE
SWITCHING
SILICON
STW16N65M5
STW16N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 48A IDM, and 0.279 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 12A ID and 90W power dissipation. Package style is flange mount with matte tin finish, suitable for high temperature environments up to 150 °C.
TO-247
R-PSFM-T3
FLANGE MOUNT
STB16N65M5
STB16N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 48A IDM, and 0.279 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE with 200mJ EAS.
DRAIN
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
245
MATTE TIN
GULL WING
30
STI6N62K3
STI6N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 22A IDM, and 1.2ohm RDS(on). Ideal for SWITCHING applications due to its 90W Power Dissipation, ENHANCEMENT MODE operation, and built-in DIODE configuration.
ULTRA LOW-ON RESISTANCE
140 mJ
620 V
5.5 A
1.2 ohm
22 A
STB18N55M5
STB18N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, 52A IDM, and 0.24 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
550 V
13 A
.24 ohm
52 A
Matte Tin (Sn) - annealed
STI13NM60N
STI13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 44A IDM, and 0.36 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 11A ID and 90W power dissipation.
600 V
11 A
.36 ohm
NOT SPECIFIED
44 A
BBS3002-TL-1E
BBS3002-TL-1E by Onsemi is a P-channel Power FET with 60V DS breakdown voltage, 400A IDM, and 0.009 ohm max RDS(on). Ideal for power management applications due to its high drain current capacity and low on-resistance. Suitable for use in enhancement mode operation at up to 150°C operating temperature.
340 mJ
60 V
.009 ohm
950 pF
P-CHANNEL
400 A
STL18N55M5
STL18N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 9.6A Pulsed Drain Current, 200mJ Avalanche Energy Rating, and 0.24 ohm On Resistance. Suitable for high-power circuits requiring efficient switching capabilities in a compact SQUARE package.
2.4 A
S-PSSO-N4
4
SQUARE
260
9.6 A
NO LEAD
STP3NK100Z
STP3NK100Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 1000V breakdown voltage, 10A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
110 mJ
1000 V
2.5 A
6 ohm
TO-220AB
10 A
TIN
STB12NM60N-1
STB12NM60N-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 90W power dissipation. This versatile FET operates efficiently in high-temperature environments up to 150 °C.
.41 ohm
40 A
40
STB12NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
STP12NM60N
STP12NM60N from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 90W power dissipation. Its robust design suits high-efficiency power management in various electronic devices.
STW12NM60N
STW12NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 10A max drain current. It offers a low on-resistance of 0.41Ω and operates at up to 150 °C. This versatile FET is packaged in a flange mount design for easy integration.
e3/e1
MATTE TIN/TIN SILVER COPPER
STI17NF25
STI17NF25 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 17 A, a breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for power management in various electronic devices.
100 mJ
250 V
17 A
.165 ohm
68 A
STP16NF25
STP16NF25 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 13 A and a breakdown voltage of 250 V. It operates in enhancement mode with a power dissipation of up to 90 W. This versatile transistor is suitable for various electronic circuits.
.235 ohm
SPB21N10G
Infineon Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 21 A;
21 A
175 Cel
STB11NM60N-1
STB11NM60N-1 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 90W power dissipation. This versatile component operates efficiently in high-temperature environments up to 150 °C.
ISOLATED
.45 ohm
STB28NM50N
STB28NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for SWITCHING applications. Features include 84A max pulsed drain current, 0.158 ohm max drain-source resistance, and 150°C max operating temperature. Suitable for high-power switching circuits requiring fast response times.
430 mJ
500 V
.158 ohm
84 A
STP28NM50N
STP28NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage. It has 84A IDM and 430mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.158 ohm RDS(on) and can handle up to 90W power dissipation.
STI11NM60ND
STI11NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 10A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STU11NM60ND
STU11NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 10A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
TO-251
STP6N62K3
STP6N62K3 from STMicroelectronics is a robust N-channel FET designed for switching applications. It features a 620V breakdown voltage, 22A max pulsed drain current, and operates at up to 150 °C. Ideal for high-power circuits, it ensures efficient performance with low on-resistance.
STP7N52K3
STP7N52K3 by STMicroelectronics is an N-channel FET designed for switching applications. It features a max drain current of 6.3 A, a breakdown voltage of 525 V, and operates at up to 150 °C. Ideal for power management in various electronic devices.
525 V
6.2 A
6.3 A
.98 ohm
25 A
STD10NM65N
STD10NM65N by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 650V breakdown voltage, 36A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
300 mJ
9 A
.48 ohm
TO-252AA
36 A
STP10NM65N
STP10NM65N by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 650V breakdown voltage, 36A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in various electronic devices.
STU10NM65N
STU10NM65N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 650V breakdown voltage and 36A pulsed drain current. It operates in enhancement mode with a max power dissipation of 90W. This versatile FET is suitable for high-efficiency power management.
TO-251AA
SPB21N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Minimum DS Breakdown Voltage: 100 V; Avalanche Energy Rating (EAS): 130 mJ;
AVALANCHE RATED
130 mJ
100 V
.08 ohm
e0
220
TIN LEAD
SPP21N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; Minimum DS Breakdown Voltage: 100 V; Maximum Drain Current (Abs) (ID): 21 A;
STD5NK60ZT4
STD5NK60ZT4 by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max Drain Current of 5A and Max Power Dissipation of 90W. This ENHANCEMENT MODE transistor operates at up to 150°C and has a built-in diode in a small outline package.
220 mJ
5 A
1.6 ohm
20 A
STP3HNK90Z
STP3HNK90Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 900V breakdown voltage and a max drain current of 3A. It operates in enhancement mode with a power dissipation of up to 90W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
900 V
3 A
4.2 ohm
STP6NK50Z
STP6NK50Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and a max drain current of 5.6A. It operates in enhancement mode with a power dissipation of up to 90W. This versatile transistor is suitable for high-temperature environments, reaching up to 150 °C.
180 mJ
5.6 A
22.4 A
STP16N65M5
STP16N65M5 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 650V breakdown voltage, 12A max drain current, and 90W power dissipation. This robust transistor operates efficiently in high-temperature environments up to 150 °C.
STU16N65M5
STU16N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 12A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STD20N20T4
STD20N20T4 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 18 A and a breakdown voltage of 200 V. It operates in enhancement mode with a low on-resistance of 0.125 Ω. Ideal for compact power management solutions, it comes in a small outline package.
200 V
.125 ohm
72 A
STP20N20
STP20N20 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 18 A and a breakdown voltage of 200 V. It operates in enhancement mode with a power dissipation of up to 90 W. Its compact design suits various electronic circuits.
MTP23P06VG
MTP23P06VG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 81A IDM, and 0.12 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175°C max temp. It has a built-in DIODE, 794mJ EAS rating, and comes in RECTANGULAR package style.
794 mJ
23 A
.12 ohm
81 A
Other Transistors
STB13NM60N
STB13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 44A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.36 ohm RDS(on) and 90W Pdiss. Suitable for surface mount, it has a max operating temperature of 150°C.
STW13NM60N
STW13NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 44A max pulsed drain current, and operates at up to 150 °C. This versatile FET is suitable for high-power circuits with efficient performance.
STD14NM50N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Qualification: Not Qualified; Terminal Form: GULL WING;
18 mJ
.32 ohm
TO-252
STD7N52DK3
STD7N52DK3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 6.2A, a breakdown voltage of 525V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
6 A
1.15 ohm
24 A
STP5N95K3
STP5N95K3 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 950V breakdown voltage, 16A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
950 V
4 A
3.5 ohm
16 A
STP7N52DK3
STP7N52DK3 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 6.2 A, a breakdown voltage of 525 V, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STU5N95K3
STU5N95K3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 950V breakdown voltage, 4A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STD7NM80-1
STD7NM80-1 by STMicroelectronics is a power FET with a min DS breakdown voltage of 800V. It is an N-channel transistor used for switching applications, with a max pulsed drain current of 26A and a max power dissipation of 90W.
240 mJ
800 V
6.5 A
1.05 ohm
26 A
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