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90 W Power Field Effect Transistors (FET) 52

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STP7NM80 by STMicroelectronics

STP7NM80

STMicroelectronics

STP7NM80 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 6.5 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 90 W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.

240 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

800 V

6.5 A

6.5 A

1.05 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

90 W

26 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FCP260N65S3 by Onsemi

FCP260N65S3

Onsemi

FCP260N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 30A and an Avalanche Energy Rating of 57mJ. Operating in ENHANCEMENT MODE, it has a Max Power Dissipation of 90W and can handle up to 12A Drain Current.

57 mJ

SINGLE WITH BUILT-IN DIODE

650 V

12 A

12 A

.26 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

90 W

30 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTMFD6H840NLT1G by Onsemi

NTMFD6H840NLT1G

Onsemi

NTMFD6H840NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 80V DS breakdown voltage, and 336A max pulsed drain current. It is used in applications requiring high power dissipation, such as power supplies and motor control systems.

297 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

80 V

74 A

14 A

.0088 ohm

METAL-OXIDE SEMICONDUCTOR

11 pF

R-PDSO-F8

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

90 W

336 A

YES

FLAT

DUAL

NOT SPECIFIED

SILICON

DMJ70H600HK3-13 by Diodes Incorporated

DMJ70H600HK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; No. of Terminals: 2; Maximum Drain Current (ID): 7.6 A;

97 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

700 V

7.6 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

90 W

30 A

MIL-STD-202

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON