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20 W Power Bipolar Junction Transistors (BJT) 30

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SD1803T-TL-E by Onsemi

2SD1803T-TL-E

Onsemi

2SD1803T-TL-E by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 5A. It is commonly used for switching applications due to its low VCEsat of 0.55V and high transition frequency of 130MHz.

COLLECTOR

5 A

60 pF

50 V

SINGLE

35

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

20 W

Other Transistors

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

130 MHz

.55 V

TRD136DT4 by STMicroelectronics

TRD136DT4

STMicroelectronics

STMicroelectronics TRD136DT4 is a NPN BJT transistor with 400V VCE, 3A IC, and 20W power dissipation. Ideal for switching applications due to its built-in diode and hFE of 10. Its small outline package makes it suitable for surface mount designs in various electronic systems.

3 A

400 V

SINGLE WITH BUILT-IN DIODE

10

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

20 W

Other Transistors

YES

GULL WING

SINGLE

SWITCHING

SILICON

NJVMJD45H11RLG by Onsemi

NJVMJD45H11RLG

Onsemi

NJVMJD45H11RLG by Onsemi is a PNP BJT transistor for switching applications. It has a max collector-emitter voltage of 80V, max collector current of 8A, and min DC current gain of 40. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

20 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

90 MHz

2SB1203S-H by Onsemi

2SB1203S-H

Onsemi

The Onsemi 2SB1203S-H is a NPN BJT transistor with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. With a power dissipation of 20W, it's suitable for various power electronics designs.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

20 W

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

2SB1203S-TL-H by Onsemi

2SB1203S-TL-H

Onsemi

The Onsemi 2SB1203S-TL-H is a NPN Power BJT for switching applications. Features include VCEsat of 0.4V, IC of 5A, and hFE of 35. With a max operating temperature of 150°C, it's ideal for high-power switching circuits in various electronic devices.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

20 W

YES

TIN BISMUTH

GULL WING

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

2SB1203T-TL-H by Onsemi

2SB1203T-TL-H

Onsemi

Onsemi's 2SB1203T-TL-H is a NPN BJT transistor with VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max operating temp of 150 °C and fT of 180MHz. With GULL WING terminals in a SMALL OUTLINE package, it offers high power dissipation at 20W.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

20 W

YES

TIN BISMUTH

GULL WING

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

2SD1803T-H by Onsemi

2SD1803T-H

Onsemi

The Onsemi 2SD1803T-H is a PNP BJT transistor with VCEsat of 0.55V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max power dissipation of 20W and operates at temperatures up to 150°C. The package style is in-line with through-hole terminals.

COLLECTOR

5 A

60 pF

50 V

SINGLE

35

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

20 W

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

130 MHz

.55 V

NJVMJD112G by Onsemi

NJVMJD112G

Onsemi

NJVMJD112G by Onsemi is a NPN Darlington BJT with 2A IC, 20W Pd, and hFE of 1000. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency of 25MHz. Its small outline package makes it suitable for surface mount designs in harsh environments.

2 A

DARLINGTON

1000

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

AEC-Q101

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SILICON

25 MHz

BULD118D-1 by STMicroelectronics

BULD118D-1

STMicroelectronics

BULD118D-1 by STMicroelectronics is a NPN Power BJT with 400V VCE, 2A IC, and 20W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with TIN finish in an IN-LINE style.

HIGH RELIABILITY

2 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-251AA

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

20 W

20 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4900 ns

1.5 V

MJD117RLG by Onsemi

MJD117RLG

Onsemi

MJD117RLG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 2A. It is designed for switching applications and has a min DC current gain of 200 (hFE).

COLLECTOR

2 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

20 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

25 MHz

KSD1691YSTSTU by Fairchild Semiconductor

KSD1691YSTSTU

Fairchild Semiconductor

KSD1691YSTSTU by Fairchild Semiconductor is a NPN Power BJT with 20W power dissipation, hFE of 160, and 60V VCE. Ideal for applications requiring a single configuration transistor in through-hole package style, such as power amplifiers or voltage regulators.

5 A

60 V

SINGLE

160

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

KSA1220AYSTSTU by Fairchild Semiconductor

KSA1220AYSTSTU

Fairchild Semiconductor

KSA1220AYSTSTU by Fairchild is a PNP BJT transistor with 160 min hFE, 1.2A IC, and 175MHz fT. Ideal for amplifier applications, it has a max operating temperature of 150°C and can handle up to 20W power dissipation in a rectangular package with matte tin finish.

1.2 A

160 V

SINGLE

160

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

175 MHz

MJD112RL by Onsemi

MJD112RL

Onsemi

MJD112RL by Onsemi is a NPN BJT with Darlington configuration, built-in diode and resistor. It has a max power dissipation of 20W, hFE of 200, and operates up to 150 °C. Ideal for switching applications due to its high collector current of 2A and max voltage of 100V.

COLLECTOR

2 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

20 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

25 MHz

MJD128T4 by Onsemi

MJD128T4

Onsemi

MJD128T4 by Onsemi is a PNP Darlington transistor with 120V max collector-emitter voltage, 8A max collector current, and 20W max power dissipation. Ideal for switching applications in small outline packages with Gull Wing terminals.

COLLECTOR

8 A

120 V

DARLINGTON

100

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

20 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

MJD42CRL by Onsemi

MJD42CRL

Onsemi

MJD42CRL by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 20W power dissipation. Ideal for switching applications in small outline packages, it operates up to 140 °C with a min hFE of 15.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e0

1

1

2

140 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

20 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

3 MHz

MJD44H11-001 by Onsemi

MJD44H11-001

Onsemi

Onsemi's MJD44H11-001 is a NPN BJT transistor with 80V VCE, 8A IC, and 20W Pd. Ideal for switching applications, it has hFE of 40, operates up to 150 °C, and features SILICON element material. Suitable for various power electronics projects requiring high-speed performance.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSIP-T3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

235

NPN

20 W

Not Qualified

Other Transistors

NO

Tin/Lead (Sn/Pb)

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

85 MHz

MJD45H11-001 by Onsemi

MJD45H11-001

Onsemi

MJD45H11-001 by Onsemi is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W power dissipation. Ideal for switching applications, it has a min hFE of 40 and operates up to 150 °C. The package style is in-line with through-hole terminals.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSIP-T3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

235

PNP

20 W

Not Qualified

Other Transistors

NO

Tin/Lead (Sn/Pb)

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

90 MHz

MJD2955G by Onsemi

MJD2955G

Onsemi

MJD2955G by Onsemi is a PNP BJT transistor with 60V VCE, 10A IC, and 20W power dissipation. Ideal for amplifier applications, it has a hFE of 5 and operates up to 150°C. This Gull Wing package with matte tin finish is surface mountable and offers a transition frequency of 2MHz.

COLLECTOR

10 A

60 V

SINGLE

5

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

20 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

2 MHz

ST13003DN by STMicroelectronics

ST13003DN

STMicroelectronics

ST13003DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 20W, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

1 A

400 V

SINGLE WITH BUILT-IN DIODE

5

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MJD44H11T5 by Onsemi

MJD44H11T5

Onsemi

The Onsemi MJD44H11T5 is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 min and operates up to 150 °C. Its Gull Wing terminals make it suitable for surface mount designs in various electronic systems.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

20 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

SWITCHING

SILICON

85 MHz

MJD42C1G by Onsemi

MJD42C1G

Onsemi

MJD42C1G by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 20W power dissipation. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. Its through-hole package style makes it suitable for various electronic designs.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

3 MHz

2N5655G by Onsemi

2N5655G

Onsemi

2N5655G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 250V and max. power dissipation of 20W. Ideal for switching applications, it has a min. DC current gain of 5 and operates at up to 150°C, making it suitable for various electronic circuits.

.5 A

250 V

SINGLE

5

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

20 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N5657G by Onsemi

2N5657G

Onsemi

The Onsemi 2N5657G is a NPN power BJT with max. collector-emitter voltage of 350V and max. collector current of 0.5A, ideal for switching applications with a max. power dissipation of 20W. Its single configuration and through-hole terminal form make it suitable for various electronic circuits requiring high-speed operation up to 10MHz transition frequency.

.5 A

350 V

SINGLE

5

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

BD159G by Onsemi

BD159G

Onsemi

The Onsemi BD159G is a NPN BJT transistor with 3 terminals and a max power dissipation of 20W. It has a min DC current gain of 30, operates at up to 150 °C, and can handle a collector-emitter voltage of 350V. Ideal for amplifier applications due to its single configuration and flange mount package style.

HIGH RELIABILITY

.5 A

350 V

SINGLE

30

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

MJD3055G by Onsemi

MJD3055G

Onsemi

MJD3055G by Onsemi is a NPN BJT transistor with 60V VCE, 10A IC, and 20W Ptot. Ideal for amplifier applications, it has a hFE of 5, operates up to 150 °C, and comes in a small outline package with Gull Wing terminals.

COLLECTOR

10 A

60 V

SINGLE

5

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

2 MHz

MJE344G by Onsemi

MJE344G

Onsemi

The Onsemi MJE344G is a NPN BJT transistor with 200V VCEO, 0.5A IC, and 20W Ptot. Ideal for amplifier applications, it has hFE of 30, fT of 15MHz, and operates up to 150°C. The package is rectangular with flange mount style and matte tin finish in a through-hole configuration.

.5 A

200 V

SINGLE

30

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

15 MHz

NJVMJD44H11RLG by Onsemi

NJVMJD44H11RLG

Onsemi

NJVMJD44H11RLG by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it operates up to 150°C and has an hFE of at least 40. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

85 MHz

MJD44H11T5G by Onsemi

MJD44H11T5G

Onsemi

MJD44H11T5G by Onsemi is a NPN Power BJT with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150 °C. Its small outline package makes it suitable for surface mount designs.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

85 MHz

ST13003N by STMicroelectronics

ST13003N

STMicroelectronics

ST13003N from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 20W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for various electronic circuits requiring reliable performance.

1 A

400 V

SINGLE

5

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2SB1203T-H by Onsemi

2SB1203T-H

Onsemi

The Onsemi 2SB1203T-H is a NPN Power BJT with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. The transistor comes in a plastic/epoxy package with through-hole terminals, making it suitable for various power electronics designs.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

.4 V