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YES Other Function Transistors 173

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
NE685M03-A by Renesas Electronics

NE685M03-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .03 A; No. of Elements: 1;

.03 A

SINGLE

75

1

150 Cel

NPN

.125 W

Other Transistors

YES

NE685M03-T1-A by Renesas Electronics

NE685M03-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.125 W

Other Transistors

YES

NE461M02-T1-AZ by Renesas Electronics

NE461M02-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .25 A; No. of Elements: 1;

.25 A

SINGLE

40

1

150 Cel

NPN

2 W

Other Transistors

YES

NE58219-T1-A by Renesas Electronics

NE58219-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .06 A;

.06 A

SINGLE

60

1

125 Cel

NPN

.1 W

Other Transistors

YES

3000 MHz

NE696M01-T1-A by Renesas Electronics

NE696M01-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Minimum DC Current Gain (hFE): 80;

.03 A

SINGLE

80

1

150 Cel

NPN

.15 W

Other Transistors

YES

NE678M04-T2-A by Renesas Electronics

NE678M04-T2-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .205 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 75;

.1 A

75

150 Cel

NPN

.205 W

Other Transistors

YES

NE677M04-T2-A by Renesas Electronics

NE677M04-T2-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .205 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1;

.05 A

SINGLE

75

1

150 Cel

NPN

.205 W

Other Transistors

YES

NE651R479A-A by Renesas Electronics

NE651R479A-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;

JUNCTION

150 Cel

N-CHANNEL

2.5 W

Other Transistors

YES

NE68019-T1-A by Renesas Electronics

NE68019-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .035 A; No. of Elements: 1;

.035 A

SINGLE

80

1

150 Cel

NPN

.1 W

Other Transistors

YES

NE68039-T1-A by Renesas Electronics

NE68039-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .035 A; Minimum DC Current Gain (hFE): 50;

.035 A

SINGLE

50

1

150 Cel

NPN

.2 W

Other Transistors

YES

2SC5015-A by Renesas Electronics

2SC5015-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.15 W

Other Transistors

YES

2SC5015-T1-A by Renesas Electronics

2SC5015-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.15 W

Other Transistors

YES

FDMC4435BZ-F126 by Fairchild Semiconductor

FDMC4435BZ-F126

Fairchild Semiconductor

FDMC4435BZ-F126 by Fairchild Semiconductor is a P-CHANNEL MOSFET with 18A max drain current and 31W power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as power supplies and motor control systems.

SINGLE

18 A

18 A

METAL-OXIDE SEMICONDUCTOR

e4

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

31 W

Other Transistors

YES

NICKEL PALLADIUM GOLD

30

BF512,235 by NXP Semiconductors

BF512,235

NXP Semiconductors

BF512,235 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.25 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.25 W

Other Transistors

YES

TIN

30

BF861B,235 by NXP Semiconductors

BF861B,235

NXP Semiconductors

The NXP Semiconductors BF861B,235 is an N-CHANNEL junction field effect transistor (JFET) with a max power dissipation of 0.25W and a max operating temperature of 150°C. It is surface mountable and has a matte tin terminal finish. This transistor can be used in various applications requiring low noise amplification or switching functions.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.25 W

Other Transistors

YES

MATTE TIN

BFG410W,135 by NXP Semiconductors

BFG410W,135

NXP Semiconductors

BFG410W,135 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.054 W, a min DC current gain (hFE) of 50, and operates up to 150 °C. Perfect for RF amplification in compact devices.

.012 A

SINGLE

50

e3

1

150 Cel

260

NPN

.054 W

Other Transistors

YES

TIN

30

BFG425W,135 by NXP Semiconductors

BFG425W,135

NXP Semiconductors

NXP Semiconductors BFG425W,135 is an NPN transistor with a max power dissipation of 0.135W and min DC current gain of 50. It operates at up to 150°C, suitable for surface mount applications in electronics requiring a collector current of up to 0.03A.

.03 A

SINGLE

50

e3

1

1

150 Cel

260

NPN

.135 W

Other Transistors

YES

TIN

BFG480W,135 by NXP Semiconductors

BFG480W,135

NXP Semiconductors

BFG480W,135 by NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.36 W, a min DC current gain (hFE) of 40, and operates up to 150 °C. Its surface mount design ensures efficient integration in compact circuits.

.25 A

SINGLE

40

e3

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

TIN

30

BFG67,235 by NXP Semiconductors

BFG67,235

NXP Semiconductors

BFG67,235 by NXP Semiconductors is an NPN single transistor ideal for high-frequency applications with a nominal transition frequency of 7500 MHz. It supports a max collector current of 50 mA and operates up to 175 °C. This surface-mount device excels in RF amplification tasks.

.05 A

SINGLE

60

e3

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

7500 MHz

BFQ67W,135 by NXP Semiconductors

BFQ67W,135

NXP Semiconductors

BFQ67W,135 by NXP Semiconductors is a single NPN transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, hFE of 60, and operates up to 150 °C. This versatile component is perfect for various electronic circuits requiring efficient signal amplification.

.05 A

SINGLE

60

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFR30,235 by NXP Semiconductors

BFR30,235

NXP Semiconductors

BFR30,235 by NXP Semiconductors is an N-channel FET designed for surface mount applications. It features a max power dissipation of 0.3 W and operates at temperatures up to 150 °C. Ideal for various electronic circuits, it ensures reliable performance in demanding environments.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.3 W

Other Transistors

YES

TIN

30

BFR31,235 by NXP Semiconductors

BFR31,235

NXP Semiconductors

BFR31,235 by NXP Semiconductors is an N-CHANNEL transistor with a max power dissipation of 0.3W and a max operating temperature of 150°C. It is surface mountable and commonly used in various electronic applications.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.3 W

Other Transistors

YES

TIN

30

BFR520,235 by NXP Semiconductors

BFR520,235

NXP Semiconductors

NXP Semiconductors' BFR520,235 is an NPN transistor with a single configuration and surface-mount capability. It features a max power dissipation of 0.3W, min DC current gain of 60, and max operating temp of 150°C. Ideal for applications requiring low collector current such as signal amplification in electronic circuits.

.07 A

SINGLE

60

e3

1

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFR540,235 by NXP Semiconductors

BFR540,235

NXP Semiconductors

BFR540,235 by NXP Semiconductors is an NPN transistor designed for surface mount applications. It features a max power dissipation of 0.5W, a min DC current gain (hFE) of 60, and operates up to 150 °C. Ideal for amplifying signals in various electronic circuits.

.12 A

SINGLE

60

e3

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

TIN

30

BFR93AW,135 by NXP Semiconductors

BFR93AW,135

NXP Semiconductors

NXP Semiconductors' BFR93AW,135 is an NPN transistor with a single configuration and surface-mount capability. It boasts a max power dissipation of 0.3W, DC current gain of 40, and transition frequency of 4500MHz. Ideal for applications requiring high-frequency signal amplification in environments up to 150°C.

.035 A

SINGLE

40

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

4500 MHz

BFS17A,235 by NXP Semiconductors

BFS17A,235

NXP Semiconductors

NXP Semiconductors' BFS17A,235 is an NPN transistor with a single configuration and surface-mount capability. It features a max power dissipation of 0.3W, min DC current gain of 20, and max operating temp of 175°C. Ideal for applications requiring low collector current such as signal amplification in electronic circuits.

.025 A

SINGLE

20

e3

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFS17W,135 by NXP Semiconductors

BFS17W,135

NXP Semiconductors

NXP Semiconductors' BFS17W,135 is an NPN transistor with a max power dissipation of 0.3W and fT of 1600MHz. Ideal for applications requiring a single configuration, such as surface-mount designs in electronics operating up to 150°C with a collector current of 0.05A.

.05 A

SINGLE

25

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

1600 MHz

BFS520,135 by NXP Semiconductors

BFS520,135

NXP Semiconductors

BFS520,135 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 60, and operates up to 150 °C. Perfect for efficient signal amplification in compact designs.

.07 A

SINGLE

60

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BF556A,235 by NXP Semiconductors

BF556A,235

NXP Semiconductors

BF556A,235 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.25 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.25 W

Other Transistors

YES

TIN

30

BF862,235 by NXP Semiconductors

BF862,235

NXP Semiconductors

NXP Semiconductors' BF862,235 is an N-CHANNEL JUNCTION FET with 0.225W power dissipation and 150°C max operating temp. It's surface-mountable with TIN terminal finish, ideal for high-frequency applications in RF amplifiers and mixers.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.225 W

Other Transistors

YES

TIN

30

BFG10,215 by NXP Semiconductors

BFG10,215

NXP Semiconductors

BFG10,215 by NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.4 W, a min DC current gain (hFE) of 25, and operates up to 175 °C. Ideal for RF amplification in compact devices.

.25 A

SINGLE

25

e3

1

175 Cel

NPN

.4 W

Other Transistors

YES

Matte Tin (Sn)

PBR941B,215 by NXP Semiconductors

PBR941B,215

NXP Semiconductors

PBR941B,215 from NXP Semiconductors is a single NPN transistor designed for surface mount applications. It features a max power dissipation of 0.36W, a min DC current gain (hFE) of 100, and operates up to 150 °C. Ideal for high-frequency circuits with a transition frequency of 7000 MHz.

.05 A

SINGLE

100

e3

1

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

TIN

30

7000 MHz

PBSS4520X,146 by NXP Semiconductors

PBSS4520X,146

NXP Semiconductors

PBSS4520X,146 from NXP Semiconductors is a single NPN transistor ideal for high-performance applications. It features a max power dissipation of 2.5W, a collector current of 5A, and operates up to 150 °C. This surface-mount device excels in RF amplification and switching tasks.

5 A

SINGLE

200

e3

1

1

150 Cel

260

NPN

2.5 W

Other Transistors

YES

TIN

30

100 MHz

PMDPB65UP,115 by NXP Semiconductors

PMDPB65UP,115

NXP Semiconductors

PMDPB65UP,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET ideal for power management applications. It supports a max drain current of 3.5 A and power dissipation of 8.3 W, operating up to 150 °C. Its surface mount design ensures efficient integration in compact circuits.

3.5 A

3.5 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

8.3 W

Other Transistors

YES

TIN

30

2SA2154CT-Y(TPL3) by Toshiba

2SA2154CT-Y(TPL3)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

120

1

150 Cel

PNP

.1 W

Other Transistors

YES

80 MHz

2SA1225-Y(Q) by Toshiba

2SA1225-Y(Q)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1.5 A; No. of Elements: 1;

1.5 A

SINGLE

120

1

150 Cel

PNP

15 W

Other Transistors

YES

2SA2059(TE12L,F) by Toshiba

2SA2059(TE12L,F)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 200;

3 A

SINGLE

200

1

150 Cel

PNP

2.5 W

Other Transistors

YES

2SA1312-BL(TE85L,F) by Toshiba

2SA1312-BL(TE85L,F)

Toshiba

Toshiba's 2SA1312-BL(TE85L,F) is a PNP transistor with max power dissipation of 0.15W, min DC current gain of 350, and max collector current of 0.1A. Ideal for applications requiring single configuration surface mount transistors in temperatures up to 125°C.

.1 A

SINGLE

350

1

125 Cel

PNP

.15 W

Other Transistors

YES

2SA1721-R(TE85L,F) by Toshiba

2SA1721-R(TE85L,F)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

30

1

150 Cel

PNP

.15 W

Other Transistors

YES

50 MHz

2SA2154MFV-GR(TPL3) by Toshiba

2SA2154MFV-GR(TPL3)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

SINGLE

200

1

150 Cel

PNP

.15 W

Other Transistors

YES

80 MHz

2SC5233-B(TE85L,F) by Toshiba

2SC5233-B(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

.5

1

125 Cel

NPN

.1 W

Other Transistors

YES

80 MHz

BFG25AW/X,115 by NXP Semiconductors

BFG25AW/X,115

NXP Semiconductors

BFG25AW/X,115 by NXP Semiconductors is a single NPN transistor ideal for high-frequency applications. It features a max power dissipation of 0.5 W, an hFE of 50, and operates up to 175 °C. This versatile component is perfect for RF amplification in compact designs.

.0065 A

SINGLE

50

1

175 Cel

NPN

.5 W

Other Transistors

YES

3500 MHz

BFG540W/XR,135 by NXP Semiconductors

BFG540W/XR,135

NXP Semiconductors

BFG540W/XR,135 from NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.5 W, a min DC current gain (hFE) of 100, and operates up to 175 °C. Perfect for surface mount designs in communication devices.

.12 A

SINGLE

100

1

175 Cel

NPN

.5 W

Other Transistors

YES

BFR94A,215 by NXP Semiconductors

BFR94A,215

NXP Semiconductors

BFR94A,215 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 65, and operates up to 150 °C. This versatile component is perfect for RF amplification tasks.

.025 A

SINGLE

65

1

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

BFR94AW,115 by NXP Semiconductors

BFR94AW,115

NXP Semiconductors

BFR94AW,115 by NXP Semiconductors is an NPN transistor designed for high-frequency applications with a nominal transition frequency of 3.5 GHz. It supports a max power dissipation of 0.3 W and operates up to 150 °C. Ideal for surface mount configurations in RF circuits.

.025 A

SINGLE

65

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

3500 MHz

BFP196R-E6327 by Infineon Technologies

BFP196R-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .7 W; Maximum Collector Current (IC): .15 A;

.15 A

SINGLE

70

1

150 Cel

NPN

.7 W

Other Transistors

YES

5000 MHz

2SC3138-Y(TE85L,F) by Toshiba

2SC3138-Y(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;

.05 A

SINGLE

120

1

125 Cel

NPN

.15 W

Other Transistors

YES

50 MHz

2SC3324-BL(TE85L,F) by Toshiba

2SC3324-BL(TE85L,F)

Toshiba

Toshiba's 2SC3324-BL(TE85L,F) is an NPN transistor with a max power dissipation of 0.15W, hFE of 350, and IC of 0.1A. Ideal for applications requiring a single configuration in surface mount setups, it can operate at temperatures up to 125°C efficiently.

.1 A

SINGLE

350

1

125 Cel

NPN

.15 W

Other Transistors

YES