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YES Other Function Transistors 173

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
TPC8109(TE12L) by Toshiba

TPC8109(TE12L)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Drain Current (Abs) (ID): 10 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.9 W

Other Transistors

YES

BC857BF-E6327 by Infineon Technologies

BC857BF-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 220;

.1 A

SINGLE

220

1

150 Cel

PNP

.25 W

Other Transistors

YES

BC860BF-E6327 by Infineon Technologies

BC860BF-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

.1 A

SINGLE

220

1

150 Cel

PNP

.25 W

Other Transistors

YES

BFP405F-E6327 by Infineon Technologies

BFP405F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .055 W; Maximum Collector Current (IC): .012 A;

.012 A

SINGLE

50

1

1

150 Cel

260

NPN

.055 W

Other Transistors

YES

18000 MHz

BFP420F-E6327 by Infineon Technologies

BFP420F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

50

1

1

150 Cel

260

NPN

.16 W

Other Transistors

YES

18000 MHz

BFR360L3-E6327 by Infineon Technologies

BFR360L3-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

90

1

150 Cel

NPN

.21 W

Other Transistors

YES

11000 MHz

BFR360F-E6327 by Infineon Technologies

BFR360F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

60

1

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

11000 MHz

BFR380F-E6327 by Infineon Technologies

BFR380F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .38 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

90

1

1

150 Cel

260

NPN

.38 W

Other Transistors

YES

11000 MHz

BFS483-E6327 by Infineon Technologies

BFS483-E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A; Minimum DC Current Gain (hFE): 50;

.065 A

50

1

150 Cel

260

NPN

.45 W

Other Transistors

YES

6000 MHz

BSP61-E6327 by Infineon Technologies

BSP61-E6327

Infineon Technologies

PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

1 A

DARLINGTON

1000

1

150 Cel

260

PNP

1.5 W

Other Transistors

YES

BSP60-E6433 by Infineon Technologies

BSP60-E6433

Infineon Technologies

PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 1000;

1 A

DARLINGTON

1000

e0

1

150 Cel

235

PNP

1.5 W

Other Transistors

YES

TIN LEAD

BSP51-E6327 by Infineon Technologies

BSP51-E6327

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

1 A

DARLINGTON

1000

1

150 Cel

260

NPN

1.5 W

Other Transistors

YES

SMBT3904U-E6327 by Infineon Technologies

SMBT3904U-E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;

.2 A

30

1

150 Cel

260

NPN

.33 W

Other Transistors

YES

300 MHz

SMBTA42-E6433 by Infineon Technologies

SMBTA42-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

25

1

1

150 Cel

260

NPN

.36 W

Other Transistors

YES

50 MHz

SMBTA92-E6433 by Infineon Technologies

SMBTA92-E6433

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

25

1

1

150 Cel

260

PNP

.36 W

Other Transistors

YES

50 MHz

BFR182W-E6327 by Infineon Technologies

BFR182W-E6327

Infineon Technologies

BFR182W-E6327 by Infineon Technologies is an NPN transistor with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.25W, min DC current gain of 50, and nominal transition frequency of 6000MHz. Ideal for high-frequency amplification in electronic circuits with operating temperatures up to 150°C.

.035 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

6000 MHz

SI3443DVTRPBF by International Rectifier

SI3443DVTRPBF

International Rectifier

SI3443DVTRPBF by International Rectifier is a P-CHANNEL FET with 4.4A max drain current and 2W power dissipation. Ideal for applications requiring single configuration, such as power management systems operating at up to 150°C.

SINGLE

4.4 A

4.4 A

METAL-OXIDE SEMICONDUCTOR

e3

2

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

2 W

Other Transistors

YES

MATTE TIN

30

IRF5810TRPBF by International Rectifier

IRF5810TRPBF

International Rectifier

IRF5810TRPBF by International Rectifier is a P-CHANNEL MOSFET with 2.9A max drain current and 0.96W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic devices requiring efficient power management.

2.9 A

2.9 A

METAL-OXIDE SEMICONDUCTOR

e3

2

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.96 W

Other Transistors

YES

MATTE TIN

30

IRF7751TRPBF by International Rectifier

IRF7751TRPBF

International Rectifier

IRF7751TRPBF by International Rectifier is a P-CHANNEL FET with 4.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring high power efficiency and thermal performance.

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

e3

2

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

1 W

Other Transistors

YES

MATTE TIN

30

AO6405L by Alpha & Omega Semiconductor

AO6405L

Alpha & Omega Semiconductor

AO6405L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 5A max drain current and 2W power dissipation. Ideal for applications requiring single configuration, enhancement mode operation, and surface mount compatibility.

SINGLE

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

2 W

Other Transistors

YES

BFN38-E6327 by Infineon Technologies

BFN38-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 25;

.2 A

SINGLE

25

1

1

150 Cel

260

NPN

1.5 W

Other Transistors

YES

BSP92P-E6327 by Infineon Technologies

BSP92P-E6327

Infineon Technologies

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): .26 A;

SINGLE

.26 A

.26 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

255

P-CHANNEL

1.8 W

Other Transistors

YES

BSP315P-E6327 by Infineon Technologies

BSP315P-E6327

Infineon Technologies

BSP315P-E6327 by Infineon is a P-CHANNEL transistor with 1.17A max drain current and 1.8W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic devices requiring efficient power management in compact designs.

SINGLE

1.17 A

1.17 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

255

P-CHANNEL

1.8 W

Other Transistors

YES

BSP317P-E6327 by Infineon Technologies

BSP317P-E6327

Infineon Technologies

BSP317P-E6327 by Infineon is a P-CHANNEL transistor with max drain current of 0.43A and power dissipation of 1.8W. It operates in enhancement mode, suitable for surface mount applications in temperatures up to 150°C. Ideal for compact electronic devices requiring efficient power management.

SINGLE

.43 A

.43 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

255

P-CHANNEL

1.8 W

Other Transistors

YES

BSP316P-E6327 by Infineon Technologies

BSP316P-E6327

Infineon Technologies

BSP316P-E6327 by Infineon is a P-CHANNEL transistor with max drain current of 0.68A and power dissipation of 1.8W. Ideal for enhancement mode operation in applications requiring high temperature tolerance up to 150°C, such as power management systems and automotive electronics.

SINGLE

.68 A

.68 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

235

P-CHANNEL

1.8 W

Other Transistors

YES

BFR705L3RH-E6327 by Infineon Technologies

BFR705L3RH-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .04 W; Maximum Collector Current (IC): .01 A; Maximum Operating Temperature: 150 Cel;

.01 A

SINGLE

160

1

1

150 Cel

260

NPN

.04 W

Other Transistors

YES

BC818K-25-E6327 by Infineon Technologies

BC818K-25-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1;

.5 A

SINGLE

160

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

BC818K-40-E6327 by Infineon Technologies

BC818K-40-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1;

.5 A

SINGLE

250

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

BC817K-25W-E6433 by Infineon Technologies

BC817K-25W-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

SINGLE

160

1

150 Cel

NPN

.25 W

Other Transistors

YES

BC856S-E6433 by Infineon Technologies

BC856S-E6433

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 200;

.1 A

200

150 Cel

PNP

.25 W

Other Transistors

YES

BC858BL3-E6327 by Infineon Technologies

BC858BL3-E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

SINGLE

220

1

1

150 Cel

260

PNP

.25 W

Other Transistors

YES

BC847BF-E6327 by Infineon Technologies

BC847BF-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200;

.1 A

SINGLE

200

1

150 Cel

NPN

.25 W

Other Transistors

YES

BFP540FESD-E6327 by Infineon Technologies

BFP540FESD-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

21000 MHz

2SC4957-A by Renesas Electronics

2SC4957-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Maximum Collector Current (IC): .03 A; No. of Elements: 1;

.03 A

SINGLE

75

1

150 Cel

NPN

.18 W

Other Transistors

YES

2SC4957-T1-A by Renesas Electronics

2SC4957-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

.03 A

SINGLE

75

1

150 Cel

NPN

.18 W

Other Transistors

YES

NE687M33-A by Renesas Electronics

NE687M33-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .09 W; Maximum Collector Current (IC): .03 A;

.03 A

SINGLE

70

1

150 Cel

NPN

.09 W

Other Transistors

YES

10000 MHz

NE687M33-T3-A by Renesas Electronics

NE687M33-T3-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .09 W; Maximum Collector Current (IC): .03 A;

.03 A

SINGLE

70

1

150 Cel

NPN

.09 W

Other Transistors

YES

10000 MHz

2SC4227-T1-A by Renesas Electronics

2SC4227-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .065 A; Minimum DC Current Gain (hFE): 40;

.065 A

SINGLE

40

1

150 Cel

NPN

.15 W

Other Transistors

YES

FDC602P-F095 by Fairchild Semiconductor

FDC602P-F095

Fairchild Semiconductor

FDC602P-F095 by Fairchild Semiconductor is a P-CHANNEL MOSFET with 5.5A max drain current and 1.6W max power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic circuits requiring high-power switching capabilities.

SINGLE

5.5 A

5.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.6 W

Other Transistors

YES

FDN360P-NBGT003B by Fairchild Semiconductor

FDN360P-NBGT003B

Fairchild Semiconductor

FDN360P-NBGT003B by Fairchild Semiconductor is a P-CHANNEL transistor with 2A max drain current and 0.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications. Ideal for circuits requiring high efficiency and low power consumption in temperatures up to 150°C.

SINGLE

2 A

2 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.5 W

Other Transistors

YES

Tin (Sn)

30

FQD8P10TM-SB82052 by Fairchild Semiconductor

FQD8P10TM-SB82052

Fairchild Semiconductor

Fairchild Semiconductor's FQD8P10TM-SB82052 is a P-CHANNEL MOSFET with 6.6A max drain current and 44W power dissipation. Ideal for enhancement mode applications, it operates at up to 150°C, making it suitable for various electronic devices requiring high power handling capabilities in compact designs.

SINGLE

6.6 A

6.6 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

44 W

Other Transistors

YES

SP8M3FU6TB by ROHM

SP8M3FU6TB

ROHM

ROHM SP8M3FU6TB is a N/P-channel MOSFET with 5A max drain current and 2W max power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring efficient power management.

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

150 Cel

N-CHANNEL AND P-CHANNEL

2 W

Other Transistors

YES

RSS060P05FU6TB by ROHM

RSS060P05FU6TB

ROHM

ROHM's RSS060P05FU6TB is a P-CHANNEL MOSFET with 6A max drain current and 2W power dissipation. Ideal for enhancement mode operation in surface mount applications up to 150°C, making it suitable for various electronic devices requiring high power efficiency.

SINGLE

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

2 W

Other Transistors

YES

10

BFG520,235 by NXP Semiconductors

BFG520,235

NXP Semiconductors

BFG520,235 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Perfect for RF amplification in compact devices.

.07 A

SINGLE

60

e3

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFG520/X,235 by NXP Semiconductors

BFG520/X,235

NXP Semiconductors

BFG520/X,235 by NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Its surface mount design ensures efficient integration in compact circuits.

.07 A

SINGLE

60

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

BFG520/XR,235 by NXP Semiconductors

BFG520/XR,235

NXP Semiconductors

BFG520/XR,235 from NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Its surface mount design enhances versatility in electronic circuits.

.07 A

SINGLE

60

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

NE856M02-T1-AZ by Renesas Electronics

NE856M02-T1-AZ

Renesas Electronics

NE856M02-T1-AZ by Renesas Electronics is an NPN transistor with a max power dissipation of 1.2W and min DC current gain of 50. It operates at a max temperature of 150°C, making it suitable for various applications requiring a single configuration surface mount transistor with a collector current of 0.1A.

.1 A

SINGLE

50

1

150 Cel

NPN

1.2 W

Other Transistors

YES

NE856M03-A by Renesas Electronics

NE856M03-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

80

1

150 Cel

NPN

.125 W

Other Transistors

YES

3000 MHz