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YES Other Function Transistors 173

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Highest Frequency Band JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
NE3513M04-A by Renesas Electronics

NE3513M04-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Operating Temperature: 125 Cel; Field Effect Transistor Technology: JUNCTION;

JUNCTION

125 Cel

N-CHANNEL

.125 W

Other Transistors

YES

NTZD3158PT1G by Onsemi

NTZD3158PT1G

Onsemi

NTZD3158PT1G by Onsemi is a P-CHANNEL FET with 0.43A max drain current and 0.28W max power dissipation. It operates in enhancement mode, suitable for applications requiring high temperature tolerance up to 150 °C. Ideal for surface mount designs needing efficient power management.

.43 A

.43 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.28 W

Other Transistors

YES

MATTE TIN

30

NTLUS3A40PZCTAG by Onsemi

NTLUS3A40PZCTAG

Onsemi

NTLUS3A40PZCTAG by Onsemi is a P-CHANNEL transistor with 6.4A max drain current and 3.8W max power dissipation in enhancement mode. Ideal for applications requiring high-power handling, such as automotive electronics or industrial control systems due to its 150 °C max operating temperature and surface mount configuration.

SINGLE

6.4 A

6.4 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

3.8 W

Other Transistors

YES

TIN

30

NTLUS3A39PZCTBG by Onsemi

NTLUS3A39PZCTBG

Onsemi

NTLUS3A39PZCTBG by Onsemi is a P-CHANNEL transistor with 5.2A max drain current and 2.3W max power dissipation in enhancement mode. Ideal for applications requiring high temperature resistance up to 150 °C, such as power management systems or industrial control circuits.

SINGLE

5.2 A

5.2 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

2.3 W

Other Transistors

YES

TIN

30

FW705-TL-E by Onsemi

FW705-TL-E

Onsemi

FW705-TL-E by Onsemi is a P-CHANNEL FET with 6A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for applications requiring high temperature tolerance up to 150 °C. Ideal for surface mount designs in various electronic systems.

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

e6

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

2.5 W

Other Transistors

YES

TIN BISMUTH

2SJ665-DL-E by Onsemi

2SJ665-DL-E

Onsemi

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

SINGLE

27 A

27 A

METAL-OXIDE SEMICONDUCTOR

e6

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

65 W

Other Transistors

YES

TIN BISMUTH

2SC2812-5-TB-E by Onsemi

2SC2812-5-TB-E

Onsemi

The Onsemi 2SC2812-5-TB-E is an NPN transistor with a min DC current gain of 135. It has a max collector current of 0.15A and can operate at temperatures up to 150 °C. This surface-mount transistor is ideal for applications requiring low power dissipation in single configurations.

.15 A

SINGLE

135

e6

1

1

150 Cel

NPN

.2 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

5HP01C-TB-H by Onsemi

5HP01C-TB-H

Onsemi

5HP01C-TB-H by Onsemi is a P-CHANNEL transistor with 0.07A max drain current and 0.25W power dissipation. Ideal for applications requiring single configuration, such as enhancement mode operation in surface mount setups.

SINGLE

.07 A

.07 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.25 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

BCX5416H6327XTSA1 by Infineon Technologies

BCX5416H6327XTSA1

Infineon Technologies

Infineon BCX5416H6327XTSA1 is an NPN transistor with max. power dissipation of 2W, min. DC current gain of 100, and max. collector current of 1A. Ideal for surface mount applications in electronics due to its single configuration and operating temp up to 150°C.

1 A

SINGLE

100

e3

1

1

150 Cel

245

NPN

2 W

Other Transistors

YES

TIN

BCX55H6327XTSA1 by Infineon Technologies

BCX55H6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; JESD-609 Code: e3;

1 A

SINGLE

40

e3

1

1

150 Cel

NPN

2 W

Other Transistors

YES

TIN

BCX56H6327XTSA1 by Infineon Technologies

BCX56H6327XTSA1

Infineon Technologies

BCX56H6327XTSA1 by Infineon Technologies is an NPN transistor with a single configuration, suitable for surface mount applications. It offers a max power dissipation of 2W, min DC current gain of 40 (hFE), and can operate at temperatures up to 150°C. Ideal for low-power electronic circuits requiring a collector current of up to 1A.

1 A

SINGLE

40

e3

1

1

150 Cel

NPN

2 W

Other Transistors

YES

TIN

BCP5116H6433XTMA1 by Infineon Technologies

BCP5116H6433XTMA1

Infineon Technologies

Infineon's BCP5116H6433XTMA1 is a PNP transistor with max power dissipation of 2W, hFE of 100, and IC of 1A. Ideal for surface mount applications in electronics due to its single configuration and operating temp up to 150°C.

1 A

SINGLE

100

1

1

150 Cel

PNP

2 W

Other Transistors

YES

2SC3074-O(Q) by Toshiba

2SC3074-O(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;

5 A

SINGLE

70

1

150 Cel

NPN

20 W

Other Transistors

YES

2SC3074-Y(Q) by Toshiba

2SC3074-Y(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 120;

5 A

SINGLE

120

1

150 Cel

NPN

20 W

Other Transistors

YES

CJD47TR13PBFREE by Central Semiconductor

CJD47TR13PBFREE

Central Semiconductor

CJD47TR13PBFREE by Central Semiconductor is an NPN transistor with a max power dissipation of 15W and a min DC current gain of 30. It is surface mountable and can handle a max collector current of 1A. This transistor is commonly used in various electronic applications.

1 A

SINGLE

30

1

150 Cel

NPN

15 W

Other Transistors

YES

10 MHz

BC857BTE6327 by Infineon Technologies

BC857BTE6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;

.1 A

SINGLE

220

1

1

150 Cel

260

PNP

.25 W

Other Transistors

YES

BSS83PE6327 by Infineon Technologies

BSS83PE6327

Infineon Technologies

BSS83PE6327 by Infineon is a P-CHANNEL transistor with a max drain current of 0.33A and power dissipation of 0.36W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C. This surface-mount transistor utilizes metal-oxide semiconductor technology, making it ideal for various electronic circuits.

SINGLE

.33 A

.33 A

METAL-OXIDE SEMICONDUCTOR

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.36 W

Other Transistors

YES

BC847BTE6327 by Infineon Technologies

BC847BTE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

SINGLE

200

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

BFS460L6E6327 by Infineon Technologies

BFS460L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 16000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Moisture Sensitivity Level (MSL): 1;

.05 A

90

1

150 Cel

260

NPN

.2 W

Other Transistors

YES

16000 MHz

BFS469L6E6327 by Infineon Technologies

BFS469L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 16000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Maximum Operating Temperature: 150 Cel;

.07 A

100

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

16000 MHz

BFP540FE6327 by Infineon Technologies

BFP540FE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A;

.08 A

SINGLE

50

1

1

150 Cel

260

NPN

.25 W

Other Transistors

YES

21000 MHz

BFS466L6E6327 by Infineon Technologies

BFS466L6E6327

Infineon Technologies

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A; Peak Reflow Temperature (C): 260;

.035 A

90

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

11000 MHz

FDV304P_NB8U003 by Fairchild Semiconductor

FDV304P_NB8U003

Fairchild Semiconductor

FDV304P_NB8U003 by Fairchild Semiconductor is a P-CHANNEL transistor with a max drain current of 0.46A and power dissipation of 0.35W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C, making it ideal for various electronic circuits.

SINGLE

.46 A

.46 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.35 W

Other Transistors

YES

PBSS4160K,115 by NXP Semiconductors

PBSS4160K,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

100

1

150 Cel

NPN

.425 W

Other Transistors

YES

150 MHz

PBSS5160K,115 by NXP Semiconductors

PBSS5160K,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): 1 A;

1 A

SINGLE

100

1

150 Cel

PNP

.425 W

Other Transistors

YES

150 MHz

PMEM4030NS,115 by NXP Semiconductors

PMEM4030NS,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

SINGLE

80

1

150 Cel

NPN

1 W

Other Transistors

YES

100 MHz

PMEM4030PS,115 by NXP Semiconductors

PMEM4030PS,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

SINGLE

80

1

150 Cel

PNP

1 W

Other Transistors

YES

100 MHz

FDC640P_F095 by Fairchild Semiconductor

FDC640P_F095

Fairchild Semiconductor

FDC640P_F095 by Fairchild Semiconductor is a P-CHANNEL transistor with 4.5A max drain current and 1.6W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C, making it suitable for various electronic devices requiring high power handling capabilities.

SINGLE

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.6 W

Other Transistors

YES

BFR360TE6327 by Infineon Technologies

BFR360TE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

60

1

1

150 Cel

260

NPN

.21 W

Other Transistors

YES

10000 MHz