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BCX5416H6327XTSA1

Infineon Technologies

BCX5416H6327XTSA1 by Infineon Technologies

Infineon BCX5416H6327XTSA1 is an NPN transistor with max. power dissipation of 2W, min. DC current gain of 100, and max. collector current of 1A. Ideal for surface mount applications in electronics due to its single configuration and operating temp up to 150°C.

Median Price

$0.177

Lifecycle Status

EOL

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 182,000 parts In-Stock

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EBV Elektronik

Germany . 1,000 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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$0.173

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$0.173

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Vyrian

USA . 5,466 parts In-Stock

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VNN

France . 3,624 parts In-Stock

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Digiode

USA . 799 parts In-Stock

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Ashlea Components Ltd

UK . 300 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 91,347 parts In-Stock

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$0.150

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Continental Prestige Electronics

USA . 2,122 parts In-Stock

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$0.173

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$0.169

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Argo Parts USA

USA . 1,902 parts In-Stock

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$0.173

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$0.168

1,902

$0.173

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Modulus Dynamics

Lithuania . 16,125 parts In-Stock

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$0.180

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$0.173

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$0.166

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16,125

$0.180

$0.173

$0.166

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AZTECH Wire

Italy . 519 parts In-Stock

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$16.890

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519

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Perfect Parts

USA . 8,960 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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Corphita

USA . 406 parts In-Stock

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iodParts Technologies Inc.

India . 300 parts In-Stock

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Overview

Discover the BCX5416H6327XTSA1 by Infineon Technologies, a top-quality NPN transistor that offers exceptional performance and reliability. Infineon Technologies, known for their cutting-edge technology and innovation, has crafted this product for a wide range of applications. From amplification to switching, this transistor is versatile and efficient. With a maximum power dissipation of 2W and a minimum DC current gain of 100, customers can trust in the superior quality and value that this product provides. Upgrade your electronic projects with the BCX5416H6327XTSA1 and experience the benefits firsthand.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and current gain characteristics.

Configuration: SINGLE

Single configuration transistors provide simplicity in circuit design and are suitable for basic amplification applications.

Surface Mount: YES

Surface mount transistors allow for compact and space-saving circuit designs, making them ideal for small electronic devices.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle higher power levels without getting damaged, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures amplification of input signals with minimal distortion, making this transistor suitable for audio and signal processing applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments, increasing its versatility in various applications.

Maximum Collector Current (IC): 1 A

A maximum collector current of 1A allows this transistor to handle higher current loads, making it suitable for power applications.

Terminal Finish: TIN

TIN terminal finish offers good solderability and corrosion resistance, ensuring reliable electrical connections and long-term performance.

Peak Reflow Temperature °C: 245

With a peak reflow temperature of 245°C, this transistor can undergo lead-free soldering processes without damage, providing ease of manufacturing.

Technical Specifications

Other Function Transistors BCX5416H6327XTSA1 attributes and parameters. Explore more Other Function Transistors devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Trade Compliance

BCX5416H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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