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BCP5116H6433XTMA1

Infineon Technologies

BCP5116H6433XTMA1 by Infineon Technologies

Infineon's BCP5116H6433XTMA1 is a PNP transistor with max power dissipation of 2W, hFE of 100, and IC of 1A. Ideal for surface mount applications in electronics due to its single configuration and operating temp up to 150°C.

Median Price

$0.185

Lifecycle Status

EOL

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 32,000 parts In-Stock

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$0.185

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$0.185

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Vyrian

USA . 2,164 parts In-Stock

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VNN

France . 1,030 parts In-Stock

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Digiode

USA . 427 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Advanced Electronics

New Zealand . 77 parts In-Stock

1+ parts

$0.405

100+ parts

$0.369

1k+ parts

$0.332

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77

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$0.332

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Modulus Dynamics

Lithuania . 22,085 parts In-Stock

1+ parts

$1.121

100+ parts

$1.076

1k+ parts

$1.031

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22,085

$1.121

$1.076

$1.031

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Component Stockers USA

USA . 26,283 parts In-Stock

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$2.700

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AZTECH Wire

Italy . 511 parts In-Stock

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$9.699

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Ampacity Inc.

Singapore . 247 parts In-Stock

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$23.050

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QUARKTWIN TECHNOLOGY LTD

USA . 22,825 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Corphita

USA . 414 parts In-Stock

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Overview

Experience the superior quality and reliability of Infineon Technologies with the BCP5116H6433XTMA1 PNP transistor. This versatile component is perfect for a variety of applications in electronics, offering customers a high-performance solution that delivers exceptional value. Whether you're looking to optimize power dissipation or maximize collector current, this single configuration transistor is the ideal choice for your project. Trust in Infineon Technologies to provide you with the best in class components for your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors allow for current to flow from emitter to collector when positive voltage is applied to the base, making them suitable for many applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces the number of components needed, making the product easier to integrate.

Surface Mount: YES

Surface mount capability makes it easier to directly mount the transistor onto a circuit board, saving space and facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 2 W

A high maximum power dissipation allows the transistor to handle higher power levels without overheating, enhancing its reliability and performance.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 indicates the ability of the transistor to amplify current, making it suitable for applications that require signal amplification.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the transistor can withstand elevated temperatures, increasing its durability in various environments.

Maximum Collector Current (IC): 1 A

The high maximum collector current of 1 A allows the transistor to handle higher current levels, making it suitable for applications that require a larger current flow.

Technical Specifications

Other Function Transistors BCP5116H6433XTMA1 attributes and parameters. Explore more Other Function Transistors devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

100

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BCP5116H6433XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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