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48 SRAM 63

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
IS61LV25616AL-10BI-TR by Integrated Silicon Solution

IS61LV25616AL-10BI-TR

Integrated Silicon Solution

IS61LV25616AL-10BI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with a 3.3V supply voltage and an operating temperature range of -40 to 85°C. It features a parallel interface and has a max access time of 10ns. This memory IC is commonly used in industrial applications requiring high-speed data storage.

10 ns

COMMON

R-PBGA-B48

4194304 bit

STANDARD SRAM

16

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3.3

Not Qualified

.015 Amp

2 V

SRAMs

100 mA

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

IS61LV25616AL-10BLI-TR by Integrated Silicon Solution

IS61LV25616AL-10BLI-TR

Integrated Silicon Solution

IS61LV25616AL-10BLI-TR is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. It features a grid array package style and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact form factors.

10 ns

COMMON

R-PBGA-B48

4194304 bit

STANDARD SRAM

16

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3.3

Not Qualified

.015 Amp

2 V

SRAMs

100 mA

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

CY62147EV30LL-45B2XAT by Cypress Semiconductor

CY62147EV30LL-45B2XAT

Cypress Semiconductor

CY62147EV30LL-45B2XAT by Cypress Semiconductor is a 256Kx16 SRAM with 45 ns access time, operating at 2.5/3.3V. It features a grid array package style, suitable for industrial temperature grades. Ideal for applications requiring fast and reliable memory storage in electronic devices.

45 ns

COMMON

R-PBGA-B48

4194304 bit

STANDARD SRAM

16

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

.000007 Amp

1.5 V

SRAMs

20 mA

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

IS61WV102416BLL-10MLI-TR by Integrated Silicon Solution

IS61WV102416BLL-10MLI-TR

Integrated Silicon Solution

IS61WV102416BLL-10MLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 16-bit memory width and 16777216 bit density. Operating at 3.3V, it offers a max access time of 10ns and peak reflow temperature of 260°C. Ideal for industrial applications requiring fast and reliable parallel memory storage solutions.

10 ns

COMMON

R-PBGA-B48

e1

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

YES

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

1.2 mm

.025 Amp

2.4 V

95 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

9 mm

CY62177ESL-55ZXI by Cypress Semiconductor

CY62177ESL-55ZXI

Cypress Semiconductor

CY62177ESL-55ZXI by Cypress Semiconductor is a 2MX16 SRAM with 55 ns access time, operating at 3.6V. It features a small outline package, suitable for industrial applications requiring fast and reliable memory access in harsh environments. With 48 terminals and 16-bit memory width, it offers high-density storage in a compact form factor.

55 ns

ALSO OPERATES AT 5V SUPPLY

8

COMMON

R-PDSO-G48

e3

18.4 mm

33554432 bit

STANDARD SRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3,5

Not Qualified

1.2 mm

.000017 Amp

1.5 V

SRAMs

45 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

20

12 mm

CY7C1041DV33-10BVIT by Cypress Semiconductor

CY7C1041DV33-10BVIT

Cypress Semiconductor

CY7C1041DV33-10BVIT by Cypress Semiconductor is a 256Kx16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast and reliable parallel memory storage in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e0

8 mm

4194304 bit

STANDARD SRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1 mm

.01 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

CY7C1041DV33-10BVJXIT by Cypress Semiconductor

CY7C1041DV33-10BVJXIT

Cypress Semiconductor

CY7C1041DV33-10BVJXIT by Cypress is a 256Kx16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast, common I/O asynchronous memory in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e1

8 mm

4194304 bit

STANDARD SRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1 mm

.01 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

20

6 mm

CY7C1061DV33-10BVXIT by Cypress Semiconductor

CY7C1061DV33-10BVXIT

Cypress Semiconductor

CY7C1061DV33-10BVXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 175mA supply current. Ideal for industrial applications requiring fast and reliable parallel memory storage in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e1

9.5 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1 mm

.025 Amp

2 V

SRAMs

175 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

40

8 mm

IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-10BLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 3V. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access time of 10ns and low standby current consumption of 0.006A.

10 ns

COMMON

R-PBGA-B48

e3

8 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

35 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.75 mm

BOTTOM

6 mm

IS61WV25616EDBLL-8BLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-8BLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-8BLI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with 8 ns access time, operating at 3.6V max voltage. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast, common I/O type memory with low standby current of 0.006 Amp.

8 ns

COMMON

R-PBGA-B48

e3

8 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

45 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.75 mm

BOTTOM

6 mm

IS61WV25616EDBLL-8BLI by Integrated Silicon Solution

IS61WV25616EDBLL-8BLI

Integrated Silicon Solution

IS61WV25616EDBLL-8BLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous operation, common I/O type, and 8ns max access time. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

8 ns

COMMON

R-PBGA-B48

e3

8 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

45 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.75 mm

BOTTOM

6 mm

AS7C316096A-10TINTR by Alliance Memory

AS7C316096A-10TINTR

Alliance Memory

Alliance Memory's AS7C316096A-10TINTR is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, common I/O type, and 3-state output characteristics.

10 ns

COMMON

R-PDSO-G48

e3/e6

18.4 mm

16777216 bit

STANDARD SRAM

8

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.04 Amp

1.5 V

SRAMs

160 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

AS7C316096A-10TIN by Alliance Memory

AS7C316096A-10TIN

Alliance Memory

Alliance Memory's AS7C316096A-10TIN is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, 48 terminals, and common I/O type. With a memory density of 16Mbit, this CMOS technology-based chip offers reliable performance in various electronic devices.

10 ns

COMMON

R-PDSO-G48

e3/e6

18.4 mm

16777216 bit

STANDARD SRAM

8

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.04 Amp

1.5 V

SRAMs

160 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

AS6C3216-55TIN by Alliance Memory

AS6C3216-55TIN

Alliance Memory

Alliance Memory's AS6C3216-55TIN is a 2MX16 SRAM with 55 ns access time, operating at 3V. Ideal for industrial applications, it offers a memory density of 33554432 bits and features a small outline package with thin profile. With common I/O type and asynchronous operation, this CMOS technology-based SRAM is suitable for various parallel memory applications.

55 ns

8

COMMON

R-PDSO-G48

e3/e6

18.4 mm

33554432 bit

STANDARD SRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.002 Amp

1.2 V

SRAMs

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

AS7C316098A-10TIN by Alliance Memory

AS7C316098A-10TIN

Alliance Memory

Alliance Memory's AS7C316098A-10TIN is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and offers 3-state output capability. With a max supply voltage of 3.6V, this CMOS technology memory chip supports parallel operation with common I/O type.

10 ns

COMMON

R-PDSO-G48

e3/e6

18.4 mm

16777216 bit

STANDARD SRAM

16

3

1

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

YES

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

.04 Amp

1.5 V

160 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

40

12 mm

AS7C316098A-10BINTR by Alliance Memory

AS7C316098A-10BINTR

Alliance Memory

Alliance Memory's AS7C316098A-10BINTR is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and offers high memory density of 16Mbit. With parallel interface and CMOS technology, this IC is suitable for various embedded systems requiring fast and reliable data storage.

10 ns

R-PBGA-B48

8 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

AS7C38096A-10BIN by Alliance Memory

AS7C38096A-10BIN

Alliance Memory

Alliance Memory's AS7C38096A-10BIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and CMOS technology. With parallel interface and 8388608-bit memory density, it suits high-speed data processing needs.

10 ns

R-PBGA-B48

8 mm

8388608 bit

STANDARD SRAM

8

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

CY62147EV30LL-45B2XA by Cypress Semiconductor

CY62147EV30LL-45B2XA

Cypress Semiconductor

CY62147EV30LL-45B2XA by Cypress Semiconductor is a 256Kx16 SRAM with 3.6V max supply voltage, 45ns access time, and industrial temperature grade. It features a very thin profile grid array package for common asynchronous applications in parallel memory systems.

45 ns

COMMON

R-PBGA-B48

e1

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1 mm

.000007 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

IS66WVE4M16EALL-70BLI by Integrated Silicon Solution

IS66WVE4M16EALL-70BLI

Integrated Silicon Solution

IS66WVE4M16EALL-70BLI by Integrated Silicon Solution is a 4MX16 Pseudo Static RAM with a memory density of 67108864 bit. It operates in asynchronous mode with a max access time of 70 ns and has a min standby voltage of 1.7 V. This SRAM is commonly used in industrial applications that require high-speed data storage and retrieval.

70 ns

COMMON

R-PBGA-B48

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

3

1

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

NO

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

NO

1.2 mm

.00015 Amp

1.7 V

25 mA

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16PCGA-70IT by Micron Technology

MT45W4MW16PCGA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

70 ns

COMMON

R-PBGA-B48

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00014 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W4MW16PCGA-70LWT by Micron Technology

MT45W4MW16PCGA-70LWT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 25 mA;

70 ns

COMMON

R-PBGA-B48

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16PGA-70IT by Micron Technology

MT45W2MW16PGA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

70 ns

COMMON

R-PBGA-B48

e1

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

IS61WV51216BLL-10MLI by Integrated Silicon Solution

IS61WV51216BLL-10MLI

Integrated Silicon Solution

IS61WV51216BLL-10MLI by Integrated Silicon Solution is a 512Kx16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and offers common I/O type for industrial applications requiring fast and reliable memory storage.

10 ns

COMMON

R-PBGA-B48

e1

11 mm

8388608 bit

STANDARD SRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.02 Amp

1.2 V

SRAMs

95 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

30

9 mm

AS7C31026C-12BIN by Alliance Memory

AS7C31026C-12BIN

Alliance Memory

Alliance Memory's AS7C31026C-12BIN is a 64Kx16 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and operates in asynchronous mode. With parallel interface and 1048576-bit memory density, it offers fast performance in compact designs.

12 ns

R-PBGA-B48

e3/e6

8 mm

1048576 bit

STANDARD SRAM

16

3

1

48

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

Not Qualified

1.34 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

40

6 mm

MT45W2MW16PGA-70ITTR by Micron Technology

MT45W2MW16PGA-70ITTR

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;

70 ns

R-PBGA-B48

e1

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

Not Qualified

1 mm

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

N04L63W2AB27I by Onsemi

N04L63W2AB27I

Onsemi

N04L63W2AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.

70 ns

COMMON

R-PBGA-B48

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N02L63W3AB25IT by Onsemi

N02L63W3AB25IT

Onsemi

Onsemi's N02L63W3AB25IT is a 128KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a low profile grid array package suitable for industrial applications, offering fast access time of 70ns and memory density of 2097152 bits.

70 ns

COMMON

R-PBGA-B48

8 mm

2097152 bit

STANDARD SRAM

16

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N02L63W3AB25I by Onsemi

N02L63W3AB25I

Onsemi

N02L63W3AB25I by Onsemi is a 128Kx16 SRAM with 70ns access time, operating at 2.5/3.3V. It features a low profile grid array package and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.

70 ns

COMMON

R-PBGA-B48

8 mm

2097152 bit

STANDARD SRAM

16

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N08L63W2AB27I by Onsemi

N08L63W2AB27I

Onsemi

Onsemi's N08L63W2AB27I is a 512Kx16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a thin profile grid array package suitable for industrial applications requiring fast access times of 85ns and low standby current of 0.00001Amp.

85 ns

COMMON

R-PBGA-B48

10 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.00001 Amp

1.8 V

SRAMs

15 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

N04L63W1AB27I by Onsemi

N04L63W1AB27I

Onsemi

N04L63W1AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.

70 ns

COMMON

R-PBGA-B48

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N08L6182AB7I by Onsemi

N08L6182AB7I

Onsemi

N08L6182AB7I by Onsemi is a 512Kx16 SRAM with 85ns access time, operating at 1.8V. It features a thin profile grid array package suitable for industrial applications requiring fast and reliable memory storage in common asynchronous mode.

85 ns

COMMON

R-PBGA-B48

10 mm

8388608 bit

STANDARD SRAM

16

1

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.8/2

Not Qualified

1.2 mm

.00001 Amp

1.2 V

SRAMs

14 mA

2.2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

M68AW256ML70ZB6 by STMicroelectronics

M68AW256ML70ZB6

STMicroelectronics

M68AW256ML70ZB6 from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at 3V, supports industrial temp ranges (-40 °C to 85 °C), and features a thin profile grid array package. Ideal for high-speed data storage in embedded systems.

70 ns

COMMON

R-PBGA-B48

e0

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000009 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

7 mm

M68AW128ML70ZB6 by STMicroelectronics

M68AW128ML70ZB6

STMicroelectronics

M68AW128ML70ZB6 from STMicroelectronics is a 128Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.

70 ns

COMMON

R-PBGA-B48

8 mm

2097152 bit

STANDARD SRAM

16

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000009 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16PFA-70IT by Micron Technology

MT45W4MW16PFA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16PFA-70WT by Micron Technology

MT45W4MW16PFA-70WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16PABA-70IT by Micron Technology

MT45W2MW16PABA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

70 ns

COMMON

R-PBGA-B48

e8

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W2MW16PABA-70WT by Micron Technology

MT45W2MW16PABA-70WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

70 ns

COMMON

R-PBGA-B48

e8

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-25 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W2MW16PAFA-70IT by Micron Technology

MT45W2MW16PAFA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16PAFA-70WT by Micron Technology

MT45W2MW16PAFA-70WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 2M;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-25 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16PAFA-85WT by Micron Technology

MT45W2MW16PAFA-85WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA48,6X8,30;

85 ns

COMMON

R-PBGA-B48

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-25 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

17 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16PBA-70IT by Micron Technology

MT45W4MW16PBA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00012 Amp;

70 ns

COMMON

R-PBGA-B48

e8

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)

BALL

.75 mm

BOTTOM

30

6 mm

CY62168DV30LL-55BVI by Cypress Semiconductor

CY62168DV30LL-55BVI

Cypress Semiconductor

CY62168DV30LL-55BVI by Cypress is a 2MX8 SRAM with 3V supply, 55ns access time, and 16777216-bit memory density. Ideal for industrial applications requiring fast, common I/O asynchronous operation in a compact grid array package.

55 ns

COMMON

R-PBGA-B48

e0

9.5 mm

16777216 bit

STANDARD SRAM

8

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

220

2.5/3.3

Not Qualified

1 mm

.00001 Amp

1.5 V

SRAMs

30 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

8 mm

CY62167DV30LL-45ZXI by Cypress Semiconductor

CY62167DV30LL-45ZXI

Cypress Semiconductor

CY62167DV30LL-45ZXI by Cypress Semiconductor is a 1MX16 SRAM with 3.6V max supply voltage, 45ns access time, and 16-bit memory width. Ideal for industrial applications requiring fast and reliable data storage in a compact thin profile package.

45 ns

CONFIGURABLE AS 2M X 8 ALSO

COMMON

R-PDSO-G48

e4

18.4 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.00001 Amp

1.5 V

SRAMs

37 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

DUAL

20

12 mm

CY62157DV30LL-55BVXI by Cypress Semiconductor

CY62157DV30LL-55BVXI

Cypress Semiconductor

CY62157DV30LL-55BVXI by Cypress is a 512Kx16 SRAM with 55ns access time, operating at 3V. It features a very thin profile package and common I/O type, suitable for industrial applications requiring fast and reliable memory storage.

55 ns

COMMON

R-PBGA-B48

e1

8 mm

8388608 bit

STANDARD SRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.5/3.3

Not Qualified

1 mm

.000004 Amp

1.5 V

SRAMs

15 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

20

6 mm

IS62WV12816BLL-55BLI by Integrated Silicon Solution

IS62WV12816BLL-55BLI

Integrated Silicon Solution

IS62WV12816BLL-55BLI by Integrated Silicon Solution is a 128KX16 SRAM with 55 ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.

55 ns

COMMON

R-PBGA-B48

e1

8 mm

2097152 bit

STANDARD SRAM

16

3

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.00001 Amp

1 V

SRAMs

30 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

IS61LV6416-10BLI by Integrated Silicon Solution

IS61LV6416-10BLI

Integrated Silicon Solution

IS61LV6416-10BLI by Integrated Silicon Solution is a 64KX16 SRAM with 3.3V supply, 10ns access time, and 85°C operating temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact GRID ARRAY package.

10 ns

COMMON

R-PBGA-B48

e1

8 mm

1048576 bit

STANDARD SRAM

16

3

1

48

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3.14 V

SRAMs

130 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

MT45W1MW16PDGA-70IT by Micron Technology

MT45W1MW16PDGA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

70 ns

COMMON

R-PBGA-B48

e1

8 mm

16777216 bit

PSEUDO STATIC RAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00007 Amp

1.7 V

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

IS62WV10248BLL-55BLI by Integrated Silicon Solution

IS62WV10248BLL-55BLI

Integrated Silicon Solution

IS62WV10248BLL-55BLI by Integrated Silicon Solution is a 1MX8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.

55 ns

COMMON

R-PBGA-B48

e1

8.7 mm

8388608 bit

STANDARD SRAM

8

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.00002 Amp

1.2 V

SRAMs

35 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

7.2 mm