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48 SRAM 63

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
IS61WV102416BLL-10MI by Integrated Silicon Solution

IS61WV102416BLL-10MI

Integrated Silicon Solution

IS61WV102416BLL-10MI by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e0

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

235

2.5/3.3

Not Qualified

1.2 mm

.02 Amp

1.2 V

SRAMs

95 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

BALL

.75 mm

BOTTOM

30

9 mm

IS64WV102416BLL-10MA3 by Integrated Silicon Solution

IS64WV102416BLL-10MA3

Integrated Silicon Solution

IS64WV102416BLL-10MA3 by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 125°C operating temp. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.

10 ns

COMMON

R-PBGA-B48

e0

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

AEC-Q100

1.2 mm

.05 Amp

1.2 V

SRAMs

140 mA

3.6 V

2.4 V

3.3

YES

CMOS

AUTOMOTIVE

TIN LEAD

BALL

.75 mm

BOTTOM

9 mm

IS61WV10248BLL-10MLI by Integrated Silicon Solution

IS61WV10248BLL-10MLI

Integrated Silicon Solution

IS61WV10248BLL-10MLI by Integrated Silicon Solution is a 1MX8 SRAM with 3.6V max supply voltage, 10ns access time, and 85°C max operating temp. Ideal for industrial applications requiring high-speed memory with a parallel interface in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e1

11 mm

8388608 bit

STANDARD SRAM

8

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.025 Amp

1.2 V

SRAMs

100 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

9 mm

IS66WVE4M16TBLL-70BLI by Integrated Silicon Solution

IS66WVE4M16TBLL-70BLI

Integrated Silicon Solution

IS66WVE4M16TBLL-70BLI by Integrated Silicon Solution is a 4MX16 SRAM with 3-STATE output, operating in asynchronous mode. It features a memory density of 67108864 bit and offers a max access time of 70 ns. Ideal for industrial applications requiring fast and reliable parallel memory operations at temperatures ranging from -40 to 85°C.

70 ns

COMMON

R-PBGA-B48

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

NO

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

NO

1.2 mm

.00015 Amp

2.7 V

25 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

IS61WV204816BLL-10TLI by Integrated Silicon Solution

IS61WV204816BLL-10TLI

Integrated Silicon Solution

IS61WV204816BLL-10TLI by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates at an industrial temperature grade of -40 to 85 °C and has a max access time of 10 ns. Ideal for applications requiring fast, asynchronous memory access in compact spaces.

10 ns

R-PDSO-G48

18.4 mm

33554432 bit

STANDARD SRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS64WV204816BLL-12CTLA3 by Integrated Silicon Solution

IS64WV204816BLL-12CTLA3

Integrated Silicon Solution

IS64WV204816BLL-12CTLA3 by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates asynchronously at a max speed of 12 ns and supports a supply voltage range from 2.4V to 3.6V. Ideal for automotive applications, this small outline, thin profile memory IC offers reliable parallel data storage in compact systems.

12 ns

R-PDSO-G48

18.4 mm

33554432 bit

STANDARD SRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

125 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.4 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV51216GBLL-45TLI by Integrated Silicon Solution

IS62WV51216GBLL-45TLI

Integrated Silicon Solution

IS62WV51216GBLL-45TLI by Integrated Silicon Solution is a 512Kx16 SRAM with a memory density of 8388608 bits. It operates in asynchronous mode with a max access time of 45 ns, suitable for industrial applications requiring fast and reliable data storage. The memory IC type is standard SRAM, featuring parallel interface and low power consumption at supply voltages ranging from 2.2V to 3.6V.

45 ns

R-PDSO-G48

18.4 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV51216HBLL-45B2LI by Integrated Silicon Solution

IS62WV51216HBLL-45B2LI

Integrated Silicon Solution

IS62WV51216HBLL-45B2LI by Integrated Silicon Solution is a 512Kx16 SRAM with 8388608-bit memory density. It operates at 3V, has a max access time of 45ns, and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable data storage in compact devices.

45 ns

R-PBGA-B48

8 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS61WV204816BLL-10TLI-TR by Integrated Silicon Solution

IS61WV204816BLL-10TLI-TR

Integrated Silicon Solution

IS61WV204816BLL-10TLI-TR by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates at 3V, has a max access time of 10ns, and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable parallel memory storage.

10 ns

R-PDSO-G48

18.4 mm

33554432 bit

STANDARD SRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV102416DBLL-45TLI-TR by Integrated Silicon Solution

IS62WV102416DBLL-45TLI-TR

Integrated Silicon Solution

IS62WV102416DBLL-45TLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 1048576 words and 16-bit memory width. Operating at an industrial temperature grade of -40 to 85 °C, it offers a max access time of 45 ns. Ideal for applications requiring fast and reliable data storage in harsh environments.

45 ns

R-PDSO-G48

18.4 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV102416FBLL-45BLI-TR by Integrated Silicon Solution

IS62WV102416FBLL-45BLI-TR

Integrated Silicon Solution

IS62WV102416FBLL-45BLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with a memory density of 16Mbit. It operates asynchronously at a max access time of 45ns and has a temperature grade suitable for industrial applications.

45 ns

R-PBGA-B48

8 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS62WV102416GBLL-45TLI-TR by Integrated Silicon Solution

IS62WV102416GBLL-45TLI-TR

Integrated Silicon Solution

IS62WV102416GBLL-45TLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 1048576 words and 16-bit memory width. Operating at -40 to 85 °C, it has a max access time of 45 ns and uses CMOS technology. Ideal for industrial applications requiring fast, asynchronous memory with a supply voltage range of 2.2V to 3.6V.

45 ns

R-PDSO-G48

18.4 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV51216GBLL-45TLI-TR by Integrated Silicon Solution

IS62WV51216GBLL-45TLI-TR

Integrated Silicon Solution

IS62WV51216GBLL-45TLI-TR by Integrated Silicon Solution is a 512Kx16 SRAM with a max access time of 45ns. Operating at 3V, it features an industrial temperature grade and parallel interface. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

45 ns

R-PDSO-G48

18.4 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR

Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution is a 4MX16 SRAM with 67108864-bit memory density. It operates in asynchronous mode with a max access time of 70ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

70 ns

R-PBGA-B48

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution

IS64WV102416BLL-10MLA3-TR

Integrated Silicon Solution

IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution is a 1MX16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package suitable for automotive applications. This CMOS memory IC has a density of 16Mbit and operates in parallel mode with a temperature range of -40 to 125°C.

10 ns

R-PBGA-B48

11 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.4 V

3.3

YES

CMOS

AUTOMOTIVE

BALL

.75 mm

BOTTOM

9 mm