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OTHER Flash Memory 49

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
PC28F128G18FE by Micron Technology

PC28F128G18FE

Micron Technology

Micron Technology's PC28F128G18FE is a 1.8V NOR Flash Memory with 8MX16 organization, 128K sector size, and 8388608 words capacity. Operating in synchronous mode with a programming voltage of 2.7V, it offers fast access time of 96ns. Ideal for applications requiring high-density memory storage and common flash interface integration.

96 ns

YES

YES

NO

R-PBGA-B64

e1

10 mm

134217728 bit

FLASH

16

1

64

64

8388608 words

8M

SYNCHRONOUS

85 Cel

-30 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

1.8

2.7

Not Qualified

1.2 mm

128K

.000115 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

M50FW080N5 by STMicroelectronics

M50FW080N5

STMicroelectronics

M50FW080N5 by STMicroelectronics is a 3.3V NOR Flash Memory with 1MX8 organization, 16 sectors of 64K words each, and operates synchronously at a max temperature of 85 °C. It is ideal for applications requiring fast access times, such as embedded systems and consumer electronics.

11 ns

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

16

40

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

M50FLW040AK5G by STMicroelectronics

M50FLW040AK5G

STMicroelectronics

M50FLW040AK5G from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11 ns, operates b/w -20 °C to 85 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring fast data storage and retrieval.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

YES

3.56 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FLW040AN5G by STMicroelectronics

M50FLW040AN5G

STMicroelectronics

M50FLW040AN5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a thin SO package, ideal for compact applications. With 512Kx8 organization, it's perfect for embedded systems requiring reliable data storage.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FLW040BN5G by STMicroelectronics

M50FLW040BN5G

STMicroelectronics

M50FLW040BN5G from STMicroelectronics is a 4Mbit NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a thin profile SO package, ideal for compact applications. With -20 °C to 85 °C temp range, it's perfect for various electronic devices.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FLW080AK5G by STMicroelectronics

M50FLW080AK5G

STMicroelectronics

M50FLW080AK5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features fast access times of 11 ns, operates b/w -20 °C to 85 °C, and is ideal for embedded applications. Its compact chip carrier design ensures efficient surface mounting in various electronic devices.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FLW080AN5G by STMicroelectronics

M50FLW080AN5G

STMicroelectronics

M50FLW080AN5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a 3.3V supply, ideal for high-speed applications. It features an access time of 11 ns and operates in a temperature range of -20 °C to 85 °C. This compact, surface-mount device is perfect for embedded systems requiring reliable data storage.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

8388608 bit

FLASH

8

1

48,13

40

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

10 mm

M50FLW080ANB5G by STMicroelectronics

M50FLW080ANB5G

STMicroelectronics

M50FLW080ANB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode, ideal for embedded applications. It operates at 3.3V, features a max access time of 11 ns, and supports temperatures from -20 °C to 85 °C. Its compact SOIC package ensures efficient space utilization in designs.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FLW080BK5G by STMicroelectronics

M50FLW080BK5G

STMicroelectronics

M50FLW080BK5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode and a max access time of 11 ns. It operates at 3.3V, features a quad terminal position, and supports applications in embedded systems. With a temp range of -20 °C to 85 °C, it's ideal for reliable data storage.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FLW080BNB5G by STMicroelectronics

M50FLW080BNB5G

STMicroelectronics

M50FLW080BNB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode, ideal for embedded applications. It operates at 3.3V, features a max access time of 11 ns, and supports temperatures from -20 °C to 85 °C. Its compact SOIC package ensures efficient space utilization in designs.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FW080K5G by STMicroelectronics

M50FW080K5G

STMicroelectronics

M50FW080K5G from STMicroelectronics is a NOR flash memory with 1M words capacity, operating at 3.3V. It features a fast access time of 11 ns and supports asynchronous mode. Ideal for embedded applications, it operates b/w -20 °C to 85 °C in a compact chip carrier package.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

16

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FW080N5G by STMicroelectronics

M50FW080N5G

STMicroelectronics

M50FW080N5G from STMicroelectronics is a 1Mx8 NOR Flash memory with a 3.3V supply, ideal for asynchronous applications. It features a max access time of 11 ns and operates b/w -20 °C to 85 °C. This compact SOIC package is perfect for space-constrained designs.

11 ns

YES

NO

R-PDSO-G40

e6

18.4 mm

8388608 bit

FLASH

8

3

1

16

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN BISMUTH

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

M50FW080NB5G by STMicroelectronics

M50FW080NB5G

STMicroelectronics

M50FW080NB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a compact SOIC package, operating at 3.3V. It features fast access times of 11 ns and supports asynchronous operation, making it ideal for embedded applications. With a wide temp range (-20 °C to 85 °C), it's perfect for diverse environments.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

16

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FW016N5G by STMicroelectronics

M50FW016N5G

STMicroelectronics

M50FW016N5G from STMicroelectronics is a 16Mb NOR Flash memory with a synchronous operating mode and a max access time of 11 ns. It operates at 3.0-3.6V, features a compact SOIC package, and is ideal for embedded applications requiring reliable data storage. Its dual terminal design ensures efficient surface mounting in space-constrained environments.

11 ns

R-PDSO-G40

e6

18.4 mm

16777216 bit

FLASH

8

3

1

40

2097152 words

2M

SYNCHRONOUS

85 Cel

-20 Cel

2MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3

Not Qualified

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN BISMUTH

GULL WING

.5 mm

DUAL

NOR TYPE

10 mm

M50FW040K5G by STMicroelectronics

M50FW040K5G

STMicroelectronics

M50FW040K5G from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11ns, operates b/w -20 °C to 85 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring reliable data storage.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

YES

3.56 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FW040N5G by STMicroelectronics

M50FW040N5G

STMicroelectronics

M50FW040N5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a compact SOIC package, ideal for space-constrained applications. This versatile memory supports dual terminal positioning and operates b/w -20 °C to 85 °C.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

10 mm

M50FW040NB5G by STMicroelectronics

M50FW040NB5G

STMicroelectronics

M50FW040NB5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a compact SOIC-32 package, ideal for space-constrained applications. With a temp range of -20 °C to 85 °C, it's perfect for industrial use.

11 ns

YES

NO

R-PDSO-G32

e3/e6

14 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50LPW116N5G by STMicroelectronics

M50LPW116N5G

STMicroelectronics

M50LPW116N5G from STMicroelectronics is a 2M x 8 NOR Flash memory with a max access time of 11 ns and operates at a nominal voltage of 3.3V. It features a compact SOIC package, ideal for space-constrained applications. This synchronous device supports dual terminals and offers robust performance in various electronic systems.

11 ns

TOP

YES

NO

R-PDSO-G40

e3

18.4 mm

16777216 bit

FLASH

8

1

1,2,1,30,16

40

2097152 words

2M

SYNCHRONOUS

85 Cel

-20 Cel

2MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,32K,64K,4K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

W19B320ABT7H by Winbond Electronics

W19B320ABT7H

Winbond Electronics

W19B320ABT7H by Winbond Electronics is a NOR flash memory with 2MX16 organization and 8,63 sectors. It operates at a voltage of 3V and has a max access time of 70ns. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

3

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-20 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000005 Amp

Flash Memories

45 mA

3.6 V

2.7 V

3

YES

CMOS

OTHER

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MTFC4GLDEA-0MWTTR by Micron Technology

MTFC4GLDEA-0MWTTR

Micron Technology

Micron Technology's MTFC4GLDEA-0MWTTR is a 3.3V MLC NAND flash memory with 4GX8 organization, operating at up to 52 MHz clock frequency. With a compact rectangular package style and very thin profile, it is ideal for applications requiring high-speed synchronous operation in devices such as smartphones and tablets.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MTFC8GAKAJCN-1MWT by Micron Technology

MTFC8GAKAJCN-1MWT

Micron Technology

MTFC8GAKAJCN-1MWT by Micron Technology is a 8GX8 MLC NAND flash memory with 68719476736 bit density. It operates at 3.3V, has a temperature range of -25 to 85 °C, and uses synchronous mode. Ideal for applications requiring high memory capacity in compact devices.

ALSO AVAILABE WITH TAPE AND REEL

NO

NO

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NO

MLC NAND TYPE

11.5 mm

MTFC4GACAJCN-1MWT by Micron Technology

MTFC4GACAJCN-1MWT

Micron Technology

MTFC4GACAJCN-1MWT by Micron Technology is a 4GX8 MLC NAND flash memory with 3.3V supply voltage, operating at -25 to 85 °C. It features a grid array package style, open-drain output, and very thin profile for applications requiring high-density storage in compact devices.

ALSO AVAILABE WITH TAPE AND REEL

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MTFC4GMDEA-1MWT by Micron Technology

MTFC4GMDEA-1MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER;

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MTFC16GJDEC-2MWT by Micron Technology

MTFC16GJDEC-2MWT

Micron Technology

Micron Technology's MTFC16GJDEC-2MWT is a 16GX8 MLC NAND flash memory with 17179869184 words capacity. Operating at 52 MHz, it has a voltage range of 2.7V to 3.6V and operates in parallel mode. With a compact size of 14mm x 18mm, it is suitable for applications requiring high-speed data storage and retrieval in devices like smartphones and tablets.

52 MHz

NO

NO

R-PBGA-B169

18 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC32GJDED-3MWT by Micron Technology

MTFC32GJDED-3MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 169; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

52 MHz

NO

NO

R-PBGA-B169

18 mm

274877906944 bit

FLASH CARD

8

1

169

34359738368 words

32G

SYNCHRONOUS

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC4GLDEA-0MWT by Micron Technology

MTFC4GLDEA-0MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MTFC64GJDDN-3MWT by Micron Technology

MTFC64GJDDN-3MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 169; Package Code: LFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

52 MHz

NO

NO

R-PBGA-B169

18 mm

549755813888 bit

FLASH CARD

8

1

169

68719476736 words

64G

SYNCHRONOUS

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

LFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3.3

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC8GLDEA-1MWT by Micron Technology

MTFC8GLDEA-1MWT

Micron Technology

MTFC8GLDEA-1MWT by Micron Technology is a 3.3V MLC NAND Flash Memory with 8GX8 organization, operating at up to 52 MHz clock frequency. It features a very thin profile, fine pitch grid array package and is suitable for applications requiring high memory density and parallel operation in devices with limited space constraints.

52 MHz

NO

NO

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER NICKEL

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

S40410081B1B1W000 by Cypress Semiconductor

S40410081B1B1W000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B1W000 is a synchronous flash memory with 8GX8 organization, MLC NAND type, and 68719476736-bit memory density. It operates at 3V with a temperature range of -25 to 85 °C. Suitable for applications requiring high-speed data storage in compact devices.

4

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410081B1B2W000 by Cypress Semiconductor

S40410081B1B2W000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B2W000 is a 8GX8 MLC NAND Flash Memory with 68719476736 bit memory density. Operating at 3V, it offers 8589934592 words and features synchronous operation in a low profile grid array package. Ideal for applications requiring high memory capacity and fast data access speeds.

4

R-PBGA-B100

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

S40410161B1B1W010 by Cypress Semiconductor

S40410161B1B1W010

Cypress Semiconductor

Cypress Semiconductor's S40410161B1B1W010 is a 16GX8 MLC NAND flash memory with 17179869184 words. Operating at 3V, it has a memory density of 137438953472 bits and supports synchronous mode. With a very thin profile and fine pitch grid array package, it is ideal for applications requiring high-speed data storage in compact devices.

4

R-PBGA-B153

13 mm

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410161B1B2W010 by Cypress Semiconductor

S40410161B1B2W010

Cypress Semiconductor

S40410161B1B2W010 by Cypress Semiconductor is a 16GX8 MLC NAND Flash Memory with 137.4Gb density. Operating at 3V, it has a low profile grid array package and synchronous mode for parallel programming. Ideal for applications requiring high memory capacity in compact devices with temperatures ranging from -25 to 85°C.

4

R-PBGA-B100

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

SFSD4096N2BM1TO-E-GE-2A1-STD by Swissbit Ag

SFSD4096N2BM1TO-E-GE-2A1-STD

Swissbit Ag

SFSD4096N2BM1TO-E-GE-2A1-STD by Swissbit Ag is a 4GX8 MLC NAND flash memory with a memory density of 34.3Gb. It operates at a max clock frequency of 100MHz and has a min operating temperature of -25°C, making it suitable for various applications requiring high-speed data storage in harsh environments.

100 MHz

R-XUUC-N8

15 mm

34359738368 bit

FLASH CARD

8

1

8

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

NOT SPECIFIED

3.3

1.1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

NO LEAD

UPPER

NOT SPECIFIED

MLC NAND TYPE

11 mm

THGBMHG7C2LBAIL by Toshiba

THGBMHG7C2LBAIL

Toshiba

FLASH; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B153

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

2.7

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG8C4LBAIR by Toshiba

THGBMHG8C4LBAIR

Toshiba

FLASH; Temperature Grade: OTHER; No. of Terminals: 169; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B169

274877906944 bit

FLASH

8

1

169

34359738368 words

32G

ASYNCHRONOUS

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

2.7

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

BOTTOM

SFSD4096N1BW1MT-E-DF-111-STD by Swissbit Ag

SFSD4096N1BW1MT-E-DF-111-STD

Swissbit Ag

Swissbit Ag's SFSD4096N1BW1MT-E-DF-111-STD is a 4GX8 flash memory chip with a memory density of 34.3Gb. It operates at a max clock frequency of 50MHz and has a min operating temperature of -25°C, making it suitable for various applications requiring high-speed data storage.

50 MHz

R-XUUC-N8

15 mm

34359738368 bit

FLASH CARD

8

1

8

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

NO LEAD

UPPER

NOT SPECIFIED

11 mm

MTFC2GMDEA-0MWTA by Micron Technology

MTFC2GMDEA-0MWTA

Micron Technology

MTFC2GMDEA-0MWTA by Micron Technology is a 2GX8 flash memory with 17179869184 bit density. Operating at 52 MHz, it has a very thin profile and fine pitch package style suitable for synchronous applications. With a voltage range of 2.7V to 3.6V, it is ideal for high-speed data storage in electronic devices.

ALSO HAVING MMC CONTROLLER

52 MHz

R-PBGA-B153

e2

13 mm

17179869184 bit

FLASH

8

1

153

2147483648 words

2G

SYNCHRONOUS

85 Cel

-25 Cel

2GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER NICKEL

BALL

.5 mm

BOTTOM

30

11.5 mm

THGBMJG6C1LBAIL by Kioxia Holdings

THGBMJG6C1LBAIL

Kioxia Holdings

Kioxia Holdings' THGBMJG6C1LBAIL is an 8GX8 flash memory IC with 68719476736-bit memory density. It operates b/w -25°C to 85°C, with a voltage range of 2.7V to 3.6V. This rectangular GRID ARRAY package is surface-mountable and ideal for applications requiring high-speed data storage in compact devices.

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

THGBMJG8C2LBAIL by Kioxia Holdings

THGBMJG8C2LBAIL

Kioxia Holdings

Kioxia Holdings' THGBMJG8C2LBAIL is a Flash Memory with 32GX8 organization, 274877906944 bit memory density, and CMOS technology. It features a package style of GRID ARRAY, operates b/w -25 to 85 °C, and has a terminal pitch of 0.5 mm. Ideal for applications requiring high-speed data storage in compact devices.

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

FEMC032GTTE7-T13-26 by Flexxon Global

FEMC032GTTE7-T13-26

Flexxon Global

FEMC032GTTE7-T13-26 by Flexxon Global is a 32GX8 MLC NAND flash memory with 274877906944-bit density. Operating at -25 to 85 °C, it has AEC-Q100 screening for automotive applications. With 3.3V supply and 100 terminals in a rectangular package, it's ideal for high-density data storage needs.

R-PBGA-B100

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC064GTTE7-T14-46 by Flexxon Global

FEMC064GTTE7-T14-46

Flexxon Global

FEMC064GTTE7-T14-46 by Flexxon Global is a Flash Memory with 64GX8 organization, MLC NAND type, and 549755813888 bit memory density. It operates b/w -25 to 85 °C, suitable for automotive applications meeting AEC-Q100 standards. With 153 terminals and CMOS technology, it offers high performance in a compact rectangular package.

R-PBGA-B153

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC008GTTE7-T13-17 by Flexxon Global

FEMC008GTTE7-T13-17

Flexxon Global

FEMC008GTTE7-T13-17 by Flexxon Global is an SLC NAND flash memory with 8GX8 organization, 3.3V supply voltage, and 85°C max operating temp. Ideal for automotive applications due to AEC-Q100 screening level and TS 16949 certification, offering high reliability in harsh environments.

R-PBGA-B100

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

SLC NAND TYPE

FEMC016GTTE7-T13-27 by Flexxon Global

FEMC016GTTE7-T13-27

Flexxon Global

FEMC016GTTE7-T13-27 by Flexxon Global is a SLC NAND flash memory with 16GX8 organization and 137.4Gb density. It operates at -25 to 85°C, has 100 terminals, and uses CMOS technology. Ideal for automotive applications due to AEC-Q100 screening level and TS16949 certification.

R-PBGA-B100

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

SLC NAND TYPE

FEMC016GTTE7-T14-16 by Flexxon Global

FEMC016GTTE7-T14-16

Flexxon Global

FEMC016GTTE7-T14-16 by Flexxon Global is a 16GX8 MLC NAND flash memory card with 137.4Tb density and 3.3V supply voltage. Ideal for automotive applications due to AEC-Q100 screening, TS 16949 compliance, and operating temperature range of -25°C to 85°C.

R-PBGA-B153

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC002GTTE7-T14-17 by Flexxon Global

FEMC002GTTE7-T14-17

Flexxon Global

FEMC002GTTE7-T14-17 by Flexxon Global is a SLC NAND flash memory with 2GX8 organization, 17179869184 bit memory density, and 3.3V nominal voltage. Ideal for automotive applications due to AEC-Q100 screening level and TS 16949 certification, operating b/w -25°C to 85°C temperature range.

R-PBGA-B153

17179869184 bit

FLASH CARD

8

1

153

2147483648 words

2G

85 Cel

-25 Cel

2GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

SLC NAND TYPE

FEMC004GTTE7-T13-17 by Flexxon Global

FEMC004GTTE7-T13-17

Flexxon Global

FEMC004GTTE7-T13-17 by Flexxon Global is a SLC NAND flash memory with 4GX8 organization, 3.3V supply voltage, and 100 terminals. It operates b/w -25°C to 85°C, suitable for automotive applications meeting AEC-Q100 standards. With a memory density of 34.36 Gb, it's ideal for high-performance storage solutions in harsh environments.

R-PBGA-B100

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

SLC NAND TYPE

FEMC004GTTE7-T14-16 by Flexxon Global

FEMC004GTTE7-T14-16

Flexxon Global

FEMC004GTTE7-T14-16 by Flexxon Global is a Flash Memory with 4GX8 organization, MLC NAND type, and 3.3V nominal voltage. It is suitable for applications requiring high memory density and operates in a wide temperature range (-25 to 85 °C).

R-PBGA-B153

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC008GTTE7-T13-16 by Flexxon Global

FEMC008GTTE7-T13-16

Flexxon Global

Flexxon Global's FEMC008GTTE7-T13-16 Flash Memory features 8GX8 organization, MLC NAND technology, and 3.3V nominal voltage. Ideal for automotive applications with AEC-Q100 screening level, TS 16949 certification, and operating temperatures ranging from -25 to 85°C.

R-PBGA-B100

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE