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TFBGA Flash Memory 49

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
SST39VF3202C-70-4I-B3KE by Microchip Technology

SST39VF3202C-70-4I-B3KE

Microchip Technology

SST39VF3202C-70-4I-B3KE by Microchip: 2MX16 Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications, offers 100K write/erase cycles and operates in asynchronous mode.

70 ns

TOP BOOT-BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

3

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

45 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

SST39LF401C-55-4C-B3KE by Microchip Technology

SST39LF401C-55-4C-B3KE

Microchip Technology

SST39LF401C-55-4C-B3KE by Microchip Technology is a 256Kx16 NOR flash memory with 100000 Write/Erase Cycles. Operating at 3.3V, it offers fast access time of 55ns and features a parallel interface for high-speed data transfer. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

55 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

SST39LF402C-55-4C-B3KE by Microchip Technology

SST39LF402C-55-4C-B3KE

Microchip Technology

SST39LF402C-55-4C-B3KE by Microchip: 256Kx16 NOR Flash Memory with 70°C max temp, 55ns access time, and 100k Write/Erase cycles. Ideal for commercial applications requiring fast data access and high endurance.

55 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

SST39VF402C-70-4I-B3KE by Microchip Technology

SST39VF402C-70-4I-B3KE

Microchip Technology

SST39VF402C-70-4I-B3KE by Microchip Technology is a 256Kx16 NOR flash memory with 3V nominal voltage. It features 100,000 write/erase cycles, operates in industrial temperature range (-40 to 85°C), and has a max access time of 70ns. Ideal for applications requiring fast, reliable non-volatile memory storage in compact electronic devices.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

M29W800FB70ZA3SE by Micron Technology

M29W800FB70ZA3SE

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 48; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

R-PBGA-B48

e1

8 mm

8388608 bit

FLASH

16

1

48

524288 words

512K

ASYNCHRONOUS

125 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

6 mm

M29W800FT70ZA3SE by Micron Technology

M29W800FT70ZA3SE

Micron Technology

M29W800FT70ZA3SE by Micron Technology is a 512KX16 Flash Memory with an operating mode of asynchronous and a max access time of 70 ns. It is commonly used in automotive applications due to its temperature grade and thin profile package style.

70 ns

TOP BOOT BLOCK

8

TOP

R-PBGA-B48

e1

8 mm

8388608 bit

FLASH

16

1

48

524288 words

512K

ASYNCHRONOUS

125 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

6 mm

NAND512R3A2SZA6E by Micron Technology

NAND512R3A2SZA6E

Micron Technology

Micron's NAND512R3A2SZA6E is a 64MX8 SLC NAND flash memory with 536Mbit density. Operating at 1.8V, it has a temperature range of -40 to 85°C and uses parallel interface with 0.8mm pitch for industrial applications.

R-PBGA-B63

e1

11 mm

536870912 bit

FLASH

8

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

1.8

1.05 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

PF48F3000P0ZBQEA by Micron Technology

PF48F3000P0ZBQEA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 88; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 65 ns;

65 ns

BOTTOM BOOT

BOTTOM

R-PBGA-B88

10 mm

134217728 bit

FLASH

16

1

88

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

1.8

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

8 mm

RC28F128P33TF60A by Micron Technology

RC28F128P33TF60A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

60 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e0

10 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TFBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8

PARALLEL

245

2.5/3,3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

30

NO

NOR TYPE

8 mm

M29W400BT55ZA1 by STMicroelectronics

M29W400BT55ZA1

STMicroelectronics

STMicroelectronics M29W400BT55ZA1 is a 256Kx16 NOR Flash Memory with 3.3V supply, operating at -40 to 85 °C. It features 100000 Write/Erase cycles, 55ns access time, and supports asynchronous mode. Ideal for applications requiring high-speed data storage in compact devices.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PBGA-B48

e1

9 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MTFC128GAPALNS-AAT by Micron Technology

MTFC128GAPALNS-AAT

Micron Technology

MTFC128GAPALNS-AAT by Micron Technology is a 128GX8 flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a thin profile and fine pitch package style. Ideal for industrial applications, it supports parallel programming with a supply voltage range of 2.7V to 3.6V.

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC128GAPALNS-AIT by Micron Technology

MTFC128GAPALNS-AIT

Micron Technology

MTFC128GAPALNS-AIT by Micron Technology is a 128GX8 flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports industrial applications. With a thin profile and fine pitch package style, it features 153 terminals in a grid array shape for surface mount assembly.

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC32GAPALBH-AAT by Micron Technology

MTFC32GAPALBH-AAT

Micron Technology

MTFC32GAPALBH-AAT by Micron Technology is a 32GX8 flash memory with 34359738368 words capacity. It operates in synchronous mode, has a thin profile package style, and supports industrial temperature grade. Ideal for applications requiring high memory density and parallel data transfer at temperatures ranging from -40 to 105°C.

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC32GAPALBH-AIT by Micron Technology

MTFC32GAPALBH-AIT

Micron Technology

Micron Technology's MTFC32GAPALBH-AIT is a 32GX8 flash memory with 274877906944 bit memory density. Operating in synchronous mode, it has a thin profile and fine pitch grid array package style. Ideal for industrial applications, it supports parallel programming with a supply voltage range of 2.7V to 3.6V.

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC64GAPALBH-AAT by Micron Technology

MTFC64GAPALBH-AAT

Micron Technology

MTFC64GAPALBH-AAT by Micron Technology is a 64GX8 flash memory with 549755813888 bit density. Operating in synchronous mode, it has a thin profile grid array package style and operates b/w -40 to 105 °C. Ideal for industrial applications requiring high-speed data storage and retrieval.

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC64GAPALBH-AIT by Micron Technology

MTFC64GAPALBH-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC64GASAONS-AITES by Micron Technology

MTFC64GASAONS-AITES

Micron Technology

MTFC64GASAONS-AITES by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at 52 MHz, it has a thin profile and fine pitch package suitable for industrial applications. With a voltage range of 2.7V to 3.6V, this synchronous memory offers reliable performance in temperatures from -40°C to 95°C.

52 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

95 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.461 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC4GLGDM-AITA by Micron Technology

MTFC4GLGDM-AITA

Micron Technology

MTFC4GLGDM-AITA by Micron Technology is a 4GX8 NAND flash memory with 34359738368 bit density. Operating in synchronous mode at up to 52 MHz clock frequency, it offers 4294967296 words capacity for industrial applications. With a thin profile and fine pitch package style, this memory IC supports parallel communication at a voltage range of 2.7V to 3.6V.

52 MHz

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.374 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GLGDM-AITZ by Micron Technology

MTFC8GLGDM-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.374 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GAMALBH-IT by Micron Technology

MTFC8GAMALBH-IT

Micron Technology

MTFC8GAMALBH-IT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at up to 200 MHz. It features a thin profile grid array package and is suitable for industrial applications requiring high memory density and fast data transfer speeds.

200 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC128GAPALNS-IT by Micron Technology

MTFC128GAPALNS-IT

Micron Technology

MTFC128GAPALNS-IT by Micron Technology is a 128GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz clock frequency. It features a thin profile grid array package suitable for industrial applications requiring high memory density and wide temperature range support.

200 MHz

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC16GAPALBH-AATTR by Micron Technology

MTFC16GAPALBH-AATTR

Micron Technology

MTFC16GAPALBH-AATTR by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. It operates synchronously at up to 200 MHz clock frequency, suitable for applications requiring high-speed data storage and retrieval. With a thin profile and fine pitch grid array package style, it offers compact design flexibility for various electronic devices.

200 MHz

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

1.2 mm

3.6 V

2.7 V

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC8GAMALBH-AITTR by Micron Technology

MTFC8GAMALBH-AITTR

Micron Technology

MTFC8GAMALBH-AITTR by Micron Technology is a NAND flash memory with 8GX8 organization, 200 MHz clock frequency, and 85°C max operating temp. Ideal for automotive applications due to AEC-Q104 screening level, thin profile package style, and wide temperature range from -40°C to 85°C.

4

200 MHz

NO

NO

5

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

YES

AEC-Q104

1.2 mm

3.6 V

2.7 V

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

NAND TYPE

11.5 mm

MTFC32GAPALBH-IT by Micron Technology

MTFC32GAPALBH-IT

Micron Technology

Micron Technology's MTFC32GAPALBH-IT is a 32GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a thin profile grid array package suitable for industrial applications. With a wide temperature range (-40 to 85°C) and high memory density (274877906944 bit), it is ideal for demanding environments requiring fast data storage and retrieval.

200 MHz

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MT29F8G08ABACAH4:C by Micron Technology

MT29F8G08ABACAH4:C

Micron Technology

Micron Technology's MT29F8G08ABACAH4:C is a 3.3V SLC NAND flash memory with 1GX8 organization, 4K page size, and 256K sector size. It operates in asynchronous mode with a max temperature of 70°C. Ideal for applications requiring high-speed data storage and retrieval in commercial-grade environments.

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

4K

63

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

1 mm

256K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

NAND512W3A2SZA6E by Micron Technology

NAND512W3A2SZA6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

35 ns

YES

NO

R-PBGA-B63

e2

11 mm

536870912 bit

FLASH

8

1

4K

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER NICKEL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MTFC64GAKAEEY-4MIT by Micron Technology

MTFC64GAKAEEY-4MIT

Micron Technology

MTFC64GAKAEEY-4MIT by Micron Technology is a 64GX8 MLC NAND flash memory with 549755813888 bit density. Operating in industrial temperature range (-40 to 85 °C), it features synchronous operation, thin profile grid array package, and 153 terminals for parallel communication. Ideal for high-density storage applications requiring fast data access and reliability.

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

MLC NAND TYPE

11.5 mm

MTFC16GKQDI-IT by Micron Technology

MTFC16GKQDI-IT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 169; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

IT ALSO REQUIRES 1.65V TO 1.95V, MMC DEVICE

52 MHz

R-PBGA-B169

16 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

30

MLC NAND TYPE

12 mm

M29W320DB80ZA3E by Micron Technology

M29W320DB80ZA3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 48; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

80 ns

8

R-PBGA-B48

8 mm

33554432 bit

FLASH

16

1

48

2097152 words

2M

ASYNCHRONOUS

125 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

NOT SPECIFIED

6 mm

NAND512R3A2SZAXE by Micron Technology

NAND512R3A2SZAXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

45 ns

YES

NO

R-PBGA-B63

11 mm

512753664 bit

FLASH

8

1

4K

63

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

1.8

1.8

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

15 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

NAND512W3A2SZAXE by Micron Technology

NAND512W3A2SZAXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

35 ns

YES

NO

R-PBGA-B63

11 mm

512753664 bit

FLASH

8

1

4K

63

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

NAND512R3A2SZA6F by Micron Technology

NAND512R3A2SZA6F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Sectors/Size: 4K;

45 ns

YES

NO

R-PBGA-B63

11 mm

512753664 bit

FLASH

8

1

4K

63

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

1.8

1.8

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

15 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

NAND256W3A2BZAXE by Micron Technology

NAND256W3A2BZAXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 55; Package Code: TFBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 3;

45 ns

YES

NO

R-PBGA-B55

10 mm

268435456 bit

FLASH

8

1

2K

55

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TFBGA

BGA55,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.05 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

8 mm

MTFC8GAMALBH-AIT by Micron Technology

MTFC8GAMALBH-AIT

Micron Technology

MTFC8GAMALBH-AIT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at -40 to 85°C. It features a thin profile package style with 153 terminals and uses parallel programming mode. Ideal for industrial applications requiring high memory density and fast data access.

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC4GLGDM-AITZ by Micron Technology

MTFC4GLGDM-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4G;

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC4GMWDM-3MAIT by Micron Technology

MTFC4GMWDM-3MAIT

Micron Technology

MTFC4GMWDM-3MAIT by Micron Technology is a 4GX8 flash memory with 34359738368 bit density. Operating in synchronous mode, it has a thin profile and fine pitch package style. Ideal for industrial applications, it supports parallel programming with a voltage range of 2.7V to 3.6V.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

PF48F4400P0VBQ0A by Micron Technology

PF48F4400P0VBQ0A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 88; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

88 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PBGA-B88

11 mm

536870912 bit

FLASH

16

1

8, 510

88

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TFBGA

BGA88,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

4

PARALLEL

NOT SPECIFIED

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000005 Amp

Flash Memories

51 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

NO

NOR TYPE

8 mm

MTFC64GAPALBH-IT by Micron Technology

MTFC64GAPALBH-IT

Micron Technology

MTFC64GAPALBH-IT by Micron Technology is a 64GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and wide temperature range support from -40°C to 85°C.

200 MHz

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC64GASAONS-AAT by Micron Technology

MTFC64GASAONS-AAT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

52 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.461 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC64GASAONS-AITESTR by Micron Technology

MTFC64GASAONS-AITESTR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

52 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

95 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.461 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

SST39VF3201C-70-4I-B3KE-T-VAO by Microchip Technology

SST39VF3201C-70-4I-B3KE-T-VAO

Microchip Technology

SST39VF3201C-70-4I-B3KE-T-VAO by Microchip: 2MX16 NOR Flash Memory, 3V, -40 to 85°C, AEC-Q100 for industrial applications. Features 8 sectors of sizes 4K and 32K words with a max access time of 70ns. Offers common flash interface, endurance of 100k cycles, and operates in asynchronous mode.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3

YES

AEC-Q100

1.2 mm

4K,32K

.00005 Amp

45 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MTFC128GAPALBH-AAT by Micron Technology

MTFC128GAPALBH-AAT

Micron Technology

MTFC128GAPALBH-AAT by Micron Technology is a 128GX8 NAND flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a terminal pitch of 0.5 mm and supports parallel communication. This thin profile package is ideal for applications requiring high-speed data storage and retrieval at temperatures ranging from -40 to 105 °C.

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.1 mm

3.6 V

2.7 V

YES

CMOS

GULL WING

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC16GAPALBH-ITTR by Micron Technology

MTFC16GAPALBH-ITTR

Micron Technology

MTFC16GAPALBH-ITTR by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a thin profile and fine pitch package style suitable for industrial applications. With a temperature range of -40 to 85 °C, it offers high-speed synchronous operation in a compact form factor.

200 MHz

R-PBGA-B153

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC16GAPALBH-IT by Micron Technology

MTFC16GAPALBH-IT

Micron Technology

MTFC16GAPALBH-IT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a thin profile and fine pitch package style suitable for industrial applications. With a temperature range of -40 to 85 °C, this flash card offers high memory density and synchronous operation.

200 MHz

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC128GAPALBH-AIT by Micron Technology

MTFC128GAPALBH-AIT

Micron Technology

Micron Technology's MTFC128GAPALBH-AIT is a 128GX8 NAND flash memory with 1.1mm seated height, operating at up to 200MHz clock frequency. Ideal for industrial applications, it offers a memory density of 1099511627776 bit and operates in an industrial temperature range from -40°C to 85°C.

200 MHz

5

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

AEC-Q100

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

SFEM064GB1ED1TO-I-6F-111-STD by Swissbit Ag

SFEM064GB1ED1TO-I-6F-111-STD

Swissbit Ag

Swissbit Ag's SFEM064GB1ED1TO-I-6F-111-STD is a 64GX8 TLC NAND flash memory with 549755813888 bit density. Operating at 3.3V, it supports up to 200 MHz clock frequency and has a temperature range of -40 to 85 °C. Ideal for applications requiring high-speed synchronous memory in compact form factors.

200 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

TLC NAND TYPE

11.5 mm

SFEM256GB1ED1TO-I-8H-111-STD by Swissbit Ag

SFEM256GB1ED1TO-I-8H-111-STD

Swissbit Ag

Swissbit Ag's SFEM256GB1ED1TO-I-8H-111-STD is a 256GX8 TLC NAND flash memory with 3.3V programming voltage, operating at -40 to 85 °C. It features a grid array package style, synchronous operation mode, and supports up to 200 MHz clock frequency. Ideal for applications requiring high-density memory storage in compact devices.

200 MHz

R-PBGA-B153

13 mm

2199023255552 bit

FLASH CARD

8

1

153

274877906944 words

256G

SYNCHRONOUS

85 Cel

-40 Cel

256GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

TLC NAND TYPE

11.5 mm

SFEM128GB1ED1TO-I-7G-111-STD by Swissbit Ag

SFEM128GB1ED1TO-I-7G-111-STD

Swissbit Ag

Swissbit Ag's SFEM128GB1ED1TO-I-7G-111-STD is a 128GX8 TLC NAND flash memory with 3.3V programming voltage, operating at up to 200 MHz clock frequency. Suitable for applications requiring high memory density and fast data processing in a compact GRID ARRAY package.

200 MHz

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

TLC NAND TYPE

11.5 mm