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M29W800FT70ZA3SE

Micron Technology

M29W800FT70ZA3SE by Micron Technology

M29W800FT70ZA3SE by Micron Technology is a 512KX16 Flash Memory with an operating mode of asynchronous and a max access time of 70 ns. It is commonly used in automotive applications due to its temperature grade and thin profile package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 14,700 parts In-Stock

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Vyrian

USA . 3,255 parts In-Stock

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3,255

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Digiode

USA . 54 parts In-Stock

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54

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Corohmni

South Africa . 18 parts In-Stock

1+ parts

$1.550

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18

$1.550

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Ampacity Inc.

Singapore . 235 parts In-Stock

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$2.000

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235

$2.000

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Aztec Data Supply Inc.

USA . 148 parts In-Stock

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$4.860

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148

$4.860

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AZTECH Wire

Italy . 482 parts In-Stock

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$5.396

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482

$5.396

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Semicontronic

India . 1,451 parts In-Stock

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$14.000

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$13.650

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$13.580

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1,451

$14.000

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Perfect Parts

USA . 21,363 parts In-Stock

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Continental Prestige Electronics

USA . 5,161 parts In-Stock

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Argo Parts USA

USA . 4,097 parts In-Stock

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Corphita

USA . 1,029 parts In-Stock

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1,029

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Microchip USA

USA . 241 parts In-Stock

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241

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Discover the M29W800FT70ZA3SE by Micron Technology, a high-quality flash memory device that offers exceptional value and benefits to customers. With its advanced technology and reliable performance, this product is perfect for a variety of applications. Whether you need to store data, run programs, or enhance system performance, this flash memory has got you covered. Its compact size, easy installation, and wide temperature range make it ideal for automotive use. Trust Micron Technology, a renowned manufacturer known for their excellence and innovation in the industry. Upgrade your storage capabilities with the M29W800FT70ZA3SE and experience the advantages it brings to your devices.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY. This choice of material ensures durability and reliability for the flash memory product.

Surface Mount

YES. Being surface mountable, this flash memory product can easily be mounted on circuit boards, facilitating ease of integration.

No. of Functions

1. With one function, this flash memory product offers simplicity and straightforward usage.

Package Shape

RECTANGULAR. The rectangular shape of this flash memory product allows for efficient use of space in electronic devices.

Operating Mode

ASYNCHRONOUS. The asynchronous operating mode enables this flash memory product to perform non-standard data transfers, enhancing flexibility.

Nominal Supply Voltage / Vsup (V)

3.3. The 3.3V supply voltage ensures compatibility with a wide range of electronic devices, making it versatile and convenient to use.

No. of Terminals

48. With 48 terminals, this flash memory product offers ample connectivity options, enabling seamless integration into various systems.

Package Style (Meter)

GRID ARRAY, THIN PROFILE, FINE PITCH. The grid array package style with a thin profile and fine pitch allows for higher component density on PCBs, optimizing space usage.

Alternate Memory Width

8. The alternate memory width of 8 ensures compatibility with systems requiring narrower data transitions, enhancing versatility.

Maximum Operating Temperature

125 °C. This flash memory product can withstand high operating temperatures, making it suitable for demanding environments.

Organization

512KX16. The organization of 512KX16 means it can handle a large amount of data efficiently, making it ideal for applications that require significant storage capacity.

Minimum Operating Temperature

40 °C. The ability to operate in extreme low temperatures enables this flash memory product to be used in various environments.

Terminal Finish

TIN SILVER COPPER. The terminal finish provides enhanced conductivity and corrosion resistance, ensuring reliable performance and longevity.

Terminal Position

BOTTOM. With the terminal position being at the bottom, this flash memory product can be easily incorporated into designs with space constraints.

Maximum Seated Height

1.2 mm. The low profile of this flash memory product allows for efficient use of vertical space, which is crucial in compact electronic devices.

Width

6 mm. The compact width of 6mm enables easy integration of this flash memory product into space-constrained designs.

Minimum Supply Voltage (Vsup)

3 V. The minimum supply voltage of 3V ensures compatibility with a wide range of power sources, providing flexibility in system integration.

Length

8 mm. The compact length of 8mm allows for efficient placement of this flash memory product on PCBs without occupying excessive space.

Programming Voltage (V)

3. The programming voltage of 3V ensures reliable and efficient programming of data into the flash memory, enhancing usability.

Temperature Grade

AUTOMOTIVE. This flash memory product is designed to meet automotive industry standards, ensuring reliable operation in harsh automotive environments.

Technology

CMOS. The CMOS technology used in this flash memory product offers low power consumption, making it energy-efficient and suitable for battery-powered devices.

Parallel or Serial

PARALLEL. The parallel interface of this flash memory product allows for fast data transfer rates, making it ideal for applications that require high-speed data access.

Terminal Form

BALL. The ball terminal form provides secure connections, contributing to the overall reliability and longevity of this flash memory product.

No. of Words

524288 words. With a large number of words, this flash memory product can store substantial amounts of data efficiently, making it suitable for data-intensive applications.

Memory Width

16. The memory width of 16 allows for efficient data storage and retrieval, enabling fast and reliable performance in various applications.

Terminal Pitch

0.8 mm. The small terminal pitch of 0.8mm facilitates precise and compact connections, enabling seamless integration into space-constrained designs.

No. of Words Code

512K. This flash memory product supports a large number of code words, providing ample storage capacity for software and firmware data.

Maximum Supply Voltage (Vsup)

3.6 V. The maximum supply voltage of 3.6V offers compatibility with a wide range of power sources, ensuring reliable performance.

Boot Block

TOP. The placement of the boot block at the top allows for easy and efficient access to the boot code, optimizing the system's startup process.

Memory Density

8388608 bit. This flash memory product offers a high memory density, allowing for the storage of large amounts of data, making it suitable for data-intensive applications.

Memory IC Type

FLASH. The flash memory IC type ensures non-volatile storage capabilities, providing reliable data retention even in the absence of power.

Maximum Access Time

70 ns. With a fast maximum access time of 70 ns, this flash memory product offers quick data retrieval and efficient operation in time-critical applications.

Technical Specifications

Flash Memory M29W800FT70ZA3SE attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

70 ns

Additional Features:

TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

M29W800FT70ZA3SE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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