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NAND512R3A2SZA6E

Micron Technology

NAND512R3A2SZA6E by Micron Technology

Micron's NAND512R3A2SZA6E is a 64MX8 SLC NAND flash memory with 536Mbit density. Operating at 1.8V, it has a temperature range of -40 to 85°C and uses parallel interface with 0.8mm pitch for industrial applications.

Median Price

$14.025

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 14,500 parts In-Stock

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IBS Electronics

USA . 12,600 parts In-Stock

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$14.025

Vyrian

USA . 8,189 parts In-Stock

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Digiode

USA . 2,032 parts In-Stock

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Elcom Components

USA . 1,260 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Cyclops Electronics Ltd

UK . 21 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 530 parts In-Stock

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$6.000

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530

$6.000

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Andel Nordic

Denmark . 306 parts In-Stock

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$7.961

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$7.643

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$7.643

306

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$7.643

$7.643

AZTECH Wire

Italy . 913 parts In-Stock

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$16.120

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913

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RC Electronics

USA . 30,494 parts In-Stock

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Perfect Parts

USA . 14,124 parts In-Stock

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Kepictronics

USA . 10,550 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,000 parts In-Stock

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Corphita

USA . 1,659 parts In-Stock

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Benley Electronics

USA . 1,260 parts In-Stock

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Emar International I/E

Canada . 1,252 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Microchip USA

USA . 383 parts In-Stock

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Overview

In a world where speed, reliability, and efficiency are key, Micron Technology presents the NAND512R3A2SZA6E Flash Memory. With its top-notch quality and cutting-edge technology, this product is the perfect solution for a wide range of applications. From industrial to consumer electronics, this versatile memory chip offers unparalleled performance and durability. Trust in Micron's expertise and choose the NAND512R3A2SZA6E for all your memory needs. Unlock the potential of your devices with this exceptional product today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the memory, making it reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal supply voltage ensures stable performance and efficient power consumption.

Maximum Operating Temperature: 85 °C

With a high operating temperature, this memory can withstand harsh environmental conditions.

Memory Density: 536870912 bit

High memory density allows for storing a large amount of data in a compact form.

Technology: CMOS

CMOS technology offers low power consumption and high speed, enhancing the overall performance of the memory.

Technical Specifications

Flash Memory NAND512R3A2SZA6E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B63

JESD-609 Code:

e1

Length:

11 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

63

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Maximum Seated Height:

1.05 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

NAND512R3A2SZA6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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