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TMS27C512-150JE

Texas Instruments

TMS27C512-150JE by Texas Instruments

TMS27C512-150JE EPROM by Texas Instruments features 64KX8 organization, 150 ns access time, and 524288 bit memory density. Ideal for industrial applications requiring reliable non-volatile memory with a parallel interface.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,664 parts In-Stock

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4,664

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Digiode

USA . 3,463 parts In-Stock

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3,463

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Distributors (Availability)

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Parana Technologies

USA . 1,550 parts In-Stock

1+ parts

$3.674

100+ parts

-

1k+ parts

$4.182

10k+ parts

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1,550

$3.674

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$4.182

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DigiPath Technology Company

USA . 1,538 parts In-Stock

1+ parts

$4.045

100+ parts

$3.722

1k+ parts

-

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1,538

$4.045

$3.722

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ChromeModa Solutions

Germany . 5,285 parts In-Stock

1+ parts

$4.128

100+ parts

$3.385

1k+ parts

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5,285

$4.128

$3.385

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IDEA Electronic Components Group

UK . 953 parts In-Stock

1+ parts

$4.128

100+ parts

-

1k+ parts

$3.715

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953

$4.128

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$3.715

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One Stop Electronics

USA . 1,254 parts In-Stock

1+ parts

$13.000

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1,254

$13.000

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AZTECH Wire

Italy . 741 parts In-Stock

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$15.007

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741

$15.007

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Corphita

USA . 3,840 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TMS27C512-150JE by Texas Instruments. Crafted with precision and expertise, this EPROM offers unparalleled performance for a wide range of applications. With a focus on quality and innovation, Texas Instruments delivers a product that guarantees seamless operation and efficiency. Trust in the value and benefits of this EPROM for your next project, and experience the advantages it brings to your technology solutions.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed packaging provides durability and protection for the EPROM, ensuring reliable performance in various environmental conditions.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate the EPROM into existing systems.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent access to memory locations, enabling efficient data retrieval and storage processes.

Output Characteristics: 3-STATE

The 3-state output characteristics provide versatility in controlling the data output, allowing for efficient data transfer and processing within the system.

Technology: CMOS

The CMOS technology used in the EPROM ensures low power consumption and high speed operation, making it an energy-efficient and reliable choice for memory storage.

Maximum Operating Temperature: 85 °C

The EPROM can operate effectively at high temperatures up to 85°C, making it suitable for industrial applications where temperature fluctuations may occur.

Technical Specifications

EPROM TMS27C512-150JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C512-150JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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