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TMS2716-45JDL

Texas Instruments

TMS2716-45JDL by Texas Instruments

TMS2716-45JDL by Texas Instruments is a 2KX8 EPROM with 3-STATE output, operating at 5V. It has a memory density of 16384 bit and max access time of 450 ns. Ideal for commercial applications requiring fast parallel memory access in devices with a supply voltage range of 4.75V to 5.25V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,096 parts In-Stock

1+ parts

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7,096

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Digiode

USA . 2,260 parts In-Stock

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2,260

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,224 parts In-Stock

1+ parts

$4.678

100+ parts

-

1k+ parts

$5.161

10k+ parts

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2,224

$4.678

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$5.161

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DigiPath Technology Company

USA . 2,320 parts In-Stock

1+ parts

$5.151

100+ parts

$4.739

1k+ parts

-

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2,320

$5.151

$4.739

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ChromeModa Solutions

Germany . 3,505 parts In-Stock

1+ parts

$5.256

100+ parts

$4.310

1k+ parts

-

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3,505

$5.256

$4.310

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IDEA Electronic Components Group

UK . 2,375 parts In-Stock

1+ parts

$5.256

100+ parts

-

1k+ parts

$4.730

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2,375

$5.256

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$4.730

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AZTECH Wire

Italy . 317 parts In-Stock

1+ parts

$12.580

100+ parts

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317

$12.580

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One Stop Electronics

USA . 633 parts In-Stock

1+ parts

$26.000

100+ parts

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633

$26.000

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Corphita

USA . 1,311 parts In-Stock

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1,311

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Overview

Upgrade your electronics with the TMS2716-45JDL EPROM from Texas Instruments. With a reputation for high-quality products, TI delivers reliability and performance you can trust. This versatile chip is perfect for a wide range of applications, offering customers value and benefits like fast access times and a wide operating temperature range. Trust Texas Instruments to provide cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material provides excellent durability and reliability for high temperature and harsh environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for independent read and write operations, providing flexibility and efficiency in data processing.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with a wide range of systems and devices.

No. of Terminals: 24

The 24 terminals offer ample connectivity options for interfacing with other components and systems.

Technology: CMOS

The CMOS technology utilized in this EPROM provides low power consumption and high speed performance, making it energy efficient and fast.

Maximum Access Time: 450 ns

The fast access time of 450 ns ensures quick data retrieval and processing, leading to improved efficiency in data handling.

Technical Specifications

EPROM TMS2716-45JDL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

Additional Features:

IT ALSO OPERATES AT 12V NOMINAL SUPPLY VOLTAGE; NEGATIVE SUPPLY CONSIDERED AS IT IS

JESD-30 Code:

R-CDIP-T24

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

Nominal Negative Supply Voltage:

-5 V

No. of Functions:

1

No. of Terminals:

24

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2716-45JDL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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