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TMS27C040-120JL

Texas Instruments

TMS27C040-120JL by Texas Instruments

TMS27C040-120JL by Texas Instruments is a 512KX8 EPROM with 3-STATE output, operating at 5V. It has a max access time of 120ns and memory density of 4Mbit. Commonly used in commercial applications requiring fast data retrieval and storage in devices with parallel interfaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,550 parts In-Stock

1+ parts

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3,550

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Digiode

USA . 3,100 parts In-Stock

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3,100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,451 parts In-Stock

1+ parts

$3.261

100+ parts

-

1k+ parts

$3.786

10k+ parts

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1,451

$3.261

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$3.786

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DigiPath Technology Company

USA . 1,976 parts In-Stock

1+ parts

$3.591

100+ parts

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1,976

$3.591

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IDEA Electronic Components Group

UK . 1,985 parts In-Stock

1+ parts

$3.664

100+ parts

-

1k+ parts

$3.298

10k+ parts

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1,985

$3.664

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$3.298

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ChromeModa Solutions

Germany . 1,758 parts In-Stock

1+ parts

$3.664

100+ parts

$3.004

1k+ parts

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1,758

$3.664

$3.004

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AZTECH Wire

Italy . 413 parts In-Stock

1+ parts

$12.730

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413

$12.730

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One Stop Electronics

USA . 1,056 parts In-Stock

1+ parts

$28.000

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1,056

$28.000

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Corphita

USA . 2,005 parts In-Stock

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Overview

Unlock endless possibilities with the TMS27C040-120JL by Texas Instruments, a high-quality EPROM that delivers reliable performance in a variety of applications. Designed with precision and expertise, this product offers customers unparalleled value and benefits with its innovative technology and 3-STATE output characteristics. Whether you're looking to enhance your electronic designs or streamline your processes, the TMS27C040-120JL is the perfect solution for all your memory needs. Experience the difference with Texas Instruments today!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides excellent protection and durability for the EPROM, ensuring reliable performance in various operating conditions.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent access to data, making this EPROM suitable for a wide range of applications that require non-synchronous data retrieval.

Nominal Supply Voltage / Vsup (V): 5

With a nominal supply voltage of 5V, this EPROM can easily integrate into existing systems and offer compatibility with standard power supplies.

Memory Density: 4194304 bit

The high memory density of 4194304 bits enables the storage of a large amount of data in a compact form factor, making this EPROM ideal for applications that require extensive memory capacity.

Maximum Access Time: 120 ns

The fast maximum access time of 120 ns ensures quick retrieval of data, enhancing the overall performance and efficiency of the EPROM in time-sensitive applications.

Technical Specifications

EPROM TMS27C040-120JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C040-120JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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