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TMS87C257-150JL

Texas Instruments

TMS87C257-150JL by Texas Instruments

TMS87C257-150JL by Texas Instruments is a 32Kx8 EPROM with 150ns access time and 3-state output. It operates at a voltage of 5V, suitable for commercial applications requiring reliable memory storage in a ceramic package. With 262144 bits memory density, it offers high performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,404 parts In-Stock

1+ parts

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7,404

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Digiode

USA . 2,083 parts In-Stock

1+ parts

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2,083

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,548 parts In-Stock

1+ parts

$2.063

100+ parts

-

1k+ parts

$2.583

10k+ parts

-

1,548

$2.063

-

$2.583

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DigiPath Technology Company

USA . 1,428 parts In-Stock

1+ parts

$2.272

100+ parts

$2.090

1k+ parts

-

10k+ parts

-

1,428

$2.272

$2.090

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ChromeModa Solutions

Germany . 1,322 parts In-Stock

1+ parts

$2.318

100+ parts

$1.901

1k+ parts

-

10k+ parts

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1,322

$2.318

$1.901

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IDEA Electronic Components Group

UK . 89 parts In-Stock

1+ parts

$2.318

100+ parts

-

1k+ parts

$2.086

10k+ parts

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89

$2.318

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$2.086

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AZTECH Wire

Italy . 788 parts In-Stock

1+ parts

$7.240

100+ parts

-

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788

$7.240

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One Stop Electronics

USA . 704 parts In-Stock

1+ parts

$21.000

100+ parts

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704

$21.000

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Corphita

USA . 1,153 parts In-Stock

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1,153

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Overview

Enhance your electronic projects with the TMS87C257-150JL by Texas Instruments, a high-quality EPROM that offers reliable performance and versatility. With its advanced technology and innovative design, this UVPROM memory IC provides 32Kx8 organization and 3-state output characteristics, making it ideal for a wide range of applications. From industrial automation to consumer electronics, this product delivers exceptional value, efficiency, and precision, ensuring seamless operation and optimal results. Trust in Texas Instruments for superior products that exceed expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal conductivity, ensuring efficient heat dissipation and overall reliability of the EPROM.

Power Supplies (V): 5

Operating at a standard voltage of 5V, this EPROM is compatible with a wide range of systems and devices.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this EPROM can withstand harsh environmental conditions and temperature fluctuations.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making this EPROM energy-efficient and reliable.

Memory Density: 262144 bit

With a high memory density, this EPROM can store a large amount of data in a compact form factor, making it ideal for applications requiring extensive memory storage.

Maximum Access Time: 150 ns

The fast access time of 150 ns ensures quick read and write operations, improving overall system performance and responsiveness.

Technical Specifications

EPROM TMS87C257-150JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS87C257-150JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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