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TMS87C257JE

Texas Instruments

TMS87C257JE by Texas Instruments

TMS87C257JE by Texas Instruments is a 32KX8 EPROM with 3-STATE output, operating at -40 to 85 °C. It has a supply voltage of 4.75-5.25V and consumes max 30mA current. Commonly used in industrial applications requiring reliable non-volatile memory storage with fast access time of 250ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,784 parts In-Stock

1+ parts

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4,784

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Vyrian

USA . 2,104 parts In-Stock

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2,104

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,720 parts In-Stock

1+ parts

$1.837

100+ parts

-

1k+ parts

$2.385

10k+ parts

-

1,720

$1.837

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$2.385

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DigiPath Technology Company

USA . 347 parts In-Stock

1+ parts

$2.023

100+ parts

$1.861

1k+ parts

-

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347

$2.023

$1.861

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ChromeModa Solutions

Germany . 5,776 parts In-Stock

1+ parts

$2.064

100+ parts

$1.692

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-

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5,776

$2.064

$1.692

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IDEA Electronic Components Group

UK . 38 parts In-Stock

1+ parts

$2.064

100+ parts

-

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$1.858

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38

$2.064

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$1.858

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One Stop Electronics

USA . 1,296 parts In-Stock

1+ parts

$19.000

100+ parts

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1,296

$19.000

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AZTECH Wire

Italy . 500 parts In-Stock

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$19.012

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500

$19.012

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Corphita

USA . 4,459 parts In-Stock

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4,459

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Overview

Elevate your projects with the TMS87C257JE EPROM from Texas Instruments, a leading manufacturer known for top-quality semiconductor solutions. This versatile memory IC offers 32Kx8 organization and 262144 bits of memory density, making it ideal for industrial applications that demand reliability and performance. With a wide operating temperature range and low standby current, this UVPROM ensures seamless operation in challenging environments. Choose the TMS87C257JE for exceptional value, superior quality, and unmatched benefits for your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and protection for the EPROM, ensuring reliable performance even in challenging environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient communication between the EPROM and other components in a system, making it suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power supplies, making integration into existing systems easy and convenient.

No. of Terminals: 28

With 28 terminals, this EPROM provides sufficient connectivity options for interfacing with other devices, enabling seamless data transfer and communication.

Maximum Operating Temperature: 85 °C

The EPROM's high maximum operating temperature of 85°C allows it to function reliably in a wide range of environments, including industrial settings where temperature fluctuations are common.

Memory Density: 262144 bit

The high memory density of 262144 bits ensures that this EPROM can store a large amount of data, making it suitable for applications that require extensive memory capacity.

Technical Specifications

EPROM TMS87C257JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS87C257JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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