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TMS27C040-8JL

Texas Instruments

TMS27C040-8JL by Texas Instruments

TMS27C040-8JL by Texas Instruments is a 512KX8 EPROM with 80ns access time, operating at 5V. It features 3-STATE output characteristics and uses CMOS technology. Commonly used in commercial applications requiring fast memory access and reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,909 parts In-Stock

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1,909

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Digiode

USA . 766 parts In-Stock

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766

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Distributors (Availability)

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Parana Technologies

USA . 390 parts In-Stock

1+ parts

$2.834

100+ parts

-

1k+ parts

$3.321

10k+ parts

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390

$2.834

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$3.321

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ChromeModa Solutions

Germany . 3,886 parts In-Stock

1+ parts

$3.184

100+ parts

$2.611

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$3.184

$2.611

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IDEA Electronic Components Group

UK . 778 parts In-Stock

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$3.184

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$2.866

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778

$3.184

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$2.866

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AZTECH Wire

Italy . 464 parts In-Stock

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$13.845

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464

$13.845

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One Stop Electronics

USA . 1,285 parts In-Stock

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$14.000

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$14.000

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Corphita

USA . 4,200 parts In-Stock

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4,200

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DigiPath Technology Company

USA . 2,240 parts In-Stock

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$2.871

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$2.871

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Overview

Unlock the power of advanced technology with the TMS27C040-8JL EPROM by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments ensures top-notch quality and reliability in every product. Ideal for a wide range of applications, this EPROM offers customers exceptional value and benefits. With its 512KX8 organization, 3-STATE output characteristics, and fast access time of 80 ns, the TMS27C040-8JL provides high-performance memory solutions for your projects. Trust Texas Instruments to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides excellent durability and protection for the EPROM, ensuring a longer lifespan.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without the need for external synchronization, making it versatile and easily integrable into various systems.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard voltage level of 5V, making it compatible with a wide range of devices and systems.

Organization: 512KX8

Offers a high memory organization of 512KX8, providing ample storage capacity for data and programs.

Memory Density: 4194304 bit

With a high memory density, this EPROM can store a large amount of data in a compact space, making it efficient and cost-effective.

Maximum Standby Current: 0.0001 Amp

Consumes minimal standby current, ensuring energy efficiency and reducing power consumption when the device is not in use.

Maximum Access Time: 80 ns

Offers fast access time of 80 ns, enabling quick read and write operations for efficient performance.

Technical Specifications

EPROM TMS27C040-8JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C040-8JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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