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TMS27C256JL

Texas Instruments

TMS27C256JL by Texas Instruments

TMS27C256JL by Texas Instruments is a 32KX8 EPROM with 250ns access time, 3-STATE output, and operates at 5V. It is used in commercial applications for memory storage due to its 262144-bit density and parallel interface.

Median Price

$9.485

Lifecycle Status

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1k+

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American Microsemiconductor Inc.

USA . 57 parts In-Stock

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Component Electronics Inc.

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Freelance Electronics

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$9.740

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$11.688

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$9.643

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Forefront Electronics and Design

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Vyrian

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Digiode

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Q Components

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J & M Industries LLC

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Semi Source

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Resion

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MRC Electronics

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GES GmbH

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Lakeland Logistics Inc

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ABC Electronics Ltd.

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LWI Electronics Inc

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Mil-Aero Solutions, Inc.

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Microfarads

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Nova Conductors

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Mentor Electronics Marketing, LLC

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ECAB

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Electronics Depot

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Atlantic Semiconductor

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Pegasus Components GmbH

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Inland Empire Components Inc.

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Fibra_Brandt Electronic GMBH

Germany . 3 parts In-Stock

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NexGen Digital

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Cogito LLC

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Cyclops Electronics Ltd

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Distributors (Availability)

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Parana Technologies

USA . 1,479 parts In-Stock

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$3.124

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$3.644

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Component Stockers USA

USA . 911 parts In-Stock

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$3.430

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$2.840

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DigiPath Technology Company

USA . 488 parts In-Stock

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ChromeModa Solutions

Germany . 1,081 parts In-Stock

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IDEA Electronic Components Group

UK . 643 parts In-Stock

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AZTECH Wire

Italy . 715 parts In-Stock

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Ampacity Inc.

Singapore . 278 parts In-Stock

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One Stop Electronics

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A-Z Elektronik GmbH

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Metaverse IC Inc.

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Corphita

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Perfect Parts

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A-Plus Industry Inc.

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Assy Fe

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Overview

Unlock the power of cutting-edge technology with the TMS27C256JL by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. This EPROM offers a wide range of applications, making it a versatile choice for various projects. With its seamless operation and efficient performance, customers can trust in the value and benefits this product delivers. Experience the advantages of the TMS27C256JL and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed body materials provide durability and protection to the EPROM, making it resistant to environmental factors and external damage.

Nominal Supply Voltage / Vsup (V): 5

The supply voltage of 5V ensures stable and reliable operation of the EPROM, making it suitable for a wide range of applications.

Organization: 32KX8

The organization of 32KX8 allows for efficient storage and retrieval of data, making the EPROM ideal for applications that require large memory capacity.

Technology: CMOS

The CMOS technology used in the EPROM ensures low power consumption and high speed performance, making it energy-efficient and faster in data operations.

Memory IC Type: UVPROM

The use of UVPROM memory IC type in the EPROM provides added security and reliability to the stored data, making it a secure choice for critical applications.

Technical Specifications

EPROM TMS27C256JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C256JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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