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TMS27C256-2JL4

Texas Instruments

TMS27C256-2JL4 by Texas Instruments

TMS27C256-2JL4 by Texas Instruments is a 32KX8 EPROM with 3-STATE output, operating at 5V. It has a max access time of 200ns and memory density of 262144 bit. Commonly used in commercial applications requiring fast and reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,824 parts In-Stock

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4,824

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Vyrian

USA . 4,201 parts In-Stock

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4,201

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Distributors (Availability)

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Parana Technologies

USA . 597 parts In-Stock

1+ parts

$3.494

100+ parts

-

1k+ parts

$4.019

10k+ parts

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597

$3.494

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$4.019

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ChromeModa Solutions

Germany . 2,701 parts In-Stock

1+ parts

$3.926

100+ parts

$3.219

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2,701

$3.926

$3.219

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IDEA Electronic Components Group

UK . 637 parts In-Stock

1+ parts

$3.926

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$3.533

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637

$3.926

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$3.533

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AZTECH Wire

Italy . 676 parts In-Stock

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$6.104

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676

$6.104

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One Stop Electronics

USA . 1,174 parts In-Stock

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$14.000

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1,174

$14.000

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Corphita

USA . 2,952 parts In-Stock

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2,952

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DigiPath Technology Company

USA . 436 parts In-Stock

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$3.540

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$3.540

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Overview

Unlock the power of technology with the TMS27C256-2JL4 EPROM by Texas Instruments. Crafted with precision and quality, this memory IC offers a versatile solution for various applications in the digital world. With its 32KX8 organization and 262144 bit memory density, this CMOS technology-based chip ensures fast access time and low standby current. Ideal for commercial use, the TMS27C256-2JL4 guarantees reliable performance and efficiency. Elevate your projects with the trusted expertise of Texas Instruments and experience seamless operation like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package provides excellent durability and protection for the EPROM, making it suitable for various environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for independent access to each memory location, providing more flexibility in data retrieval and programming tasks.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power sources, making integration into existing systems easier.

Memory Density: 262144 bit

With a high memory density of 262144 bits, this EPROM offers ample storage capacity for storing data or program codes efficiently.

Maximum Access Time: 200 ns

The fast access time of 200 ns ensures quick read/write operations, making the EPROM suitable for applications requiring high-speed data access.

Technical Specifications

EPROM TMS27C256-2JL4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C256-2JL4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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