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TMS25L32-45JDL

Texas Instruments

TMS25L32-45JDL by Texas Instruments

TMS25L32-45JDL by Texas Instruments is a 4KX8 EPROM with 32768 bit memory density and 450 ns max access time. It has a temperature range of 0-70 °C and features 3-STATE output characteristics. Ideal for applications requiring reliable non-volatile memory storage in commercial-grade electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,747 parts In-Stock

1+ parts

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5,747

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Digiode

USA . 431 parts In-Stock

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431

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,359 parts In-Stock

1+ parts

$4.930

100+ parts

-

1k+ parts

$5.464

10k+ parts

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1,359

$4.930

-

$5.464

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DigiPath Technology Company

USA . 1,323 parts In-Stock

1+ parts

$5.428

100+ parts

$4.994

1k+ parts

-

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1,323

$5.428

$4.994

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ChromeModa Solutions

Germany . 4,712 parts In-Stock

1+ parts

$5.539

100+ parts

$4.542

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-

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4,712

$5.539

$4.542

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IDEA Electronic Components Group

UK . 1,779 parts In-Stock

1+ parts

$5.539

100+ parts

-

1k+ parts

$4.985

10k+ parts

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1,779

$5.539

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$4.985

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AZTECH Wire

Italy . 785 parts In-Stock

1+ parts

$11.771

100+ parts

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785

$11.771

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One Stop Electronics

USA . 396 parts In-Stock

1+ parts

$17.000

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396

$17.000

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Corphita

USA . 3,295 parts In-Stock

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3,295

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Overview

Unlock the power of reliable data storage with the TMS25L32-45JDL by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments ensures top-notch quality and performance in every product. The EPROM category is essential for storing crucial information in a variety of applications. With the TMS25L32-45JDL, customers can trust in its durability, efficiency, and versatility. Experience seamless operation and peace of mind knowing your data is secure with this innovative solution.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent heat resistance and durability, ensuring reliable performance in various environments.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into existing circuit designs and systems.

Input/Output Type: COMMON

Common input/output type simplifies connections and communication with other components.

No. of Terminals: 24

A sufficient number of terminals for connectivity and data transfer needs.

Package Style (Meter): IN-LINE

In-line package style provides a compact form factor for space-efficient installation.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures stable performance even in demanding conditions.

Organization: 4KX8

4KX8 organization offers a balanced combination of memory capacity and data processing capabilities.

Output Characteristics: 3-STATE

3-state output characteristics allow for efficient control of data flow and signal transmission.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures usability under normal operating conditions.

Terminal Position: DUAL

Dual terminal positioning facilitates easy installation and stable connections.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures compatibility with standard operating environments.

Technology: MOS

MOS technology provides efficient data storage and retrieval capabilities.

Terminal Form: THROUGH-HOLE

Through-hole terminal form offers secure and reliable connections for long-term use.

No. of Words: 4096 words

Ample storage capacity for storing a large number of data words.

Memory Width: 8

Memory width of 8 bits allows for processing and storage of data in byte-sized chunks.

Terminal Pitch: 2.54 mm

Terminal pitch of 2.54 mm enables easy connections and compatibility with standard PCB layouts.

No. of Words Code: 4K

4K words code provides a clear indication of the memory capacity of the EPROM.

Memory Density: 32768 bit

High memory density allows for efficient storage of data in a compact space.

Maximum Access Time: 450 ns

Fast maximum access time ensures quick data retrieval and processing for improved performance.

Technical Specifications

EPROM TMS25L32-45JDL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

32768 bit

Memory Width:

8

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

EPROMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS25L32-45JDL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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