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TMS2532-50JL

Texas Instruments

TMS2532-50JL by Texas Instruments

TMS2532-50JL by Texas Instruments is a 4KX8 EPROM with 3-STATE output, operating b/w 0 to 70 °C. It has a memory density of 32768 bit and max access time of 500 ns. Ideal for commercial applications requiring fast data retrieval in a compact IN-LINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,351 parts In-Stock

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8,351

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Digiode

USA . 905 parts In-Stock

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905

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 422 parts In-Stock

1+ parts

$1.966

100+ parts

-

1k+ parts

$2.499

10k+ parts

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422

$1.966

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$2.499

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DigiPath Technology Company

USA . 298 parts In-Stock

1+ parts

$2.165

100+ parts

$1.992

1k+ parts

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298

$2.165

$1.992

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IDEA Electronic Components Group

UK . 965 parts In-Stock

1+ parts

$2.209

100+ parts

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1k+ parts

$1.988

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965

$2.209

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$1.988

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ChromeModa Solutions

Germany . 131 parts In-Stock

1+ parts

$2.209

100+ parts

$1.811

1k+ parts

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131

$2.209

$1.811

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AZTECH Wire

Italy . 773 parts In-Stock

1+ parts

$6.710

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773

$6.710

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One Stop Electronics

USA . 1,262 parts In-Stock

1+ parts

$28.000

100+ parts

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1,262

$28.000

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Corphita

USA . 603 parts In-Stock

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603

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Overview

Unlock the power of innovation with the TMS2532-50JL EPROM by Texas Instruments. Known for their superior quality and reliability, Texas Instruments has created a product that exceeds industry standards. This EPROM is ideal for a wide range of applications, offering customers exceptional value and benefits. Whether you are looking to enhance your electronics project or streamline your manufacturing process, the TMS2532-50JL delivers unmatched performance and efficiency. Experience the difference with Texas Instruments EPROM technology.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection for the EPROM, ensuring durability and reliability in various operating conditions.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and installation in various electronic devices and systems.

Input/Output Type: COMMON

Common input/output type simplifies the design and interface of the EPROM with other components or systems.

No. of Terminals: 24

Having 24 terminals provides sufficient connectivity options for interfacing with other components or systems.

Package Style (Meter): IN-LINE

In-line package style offers a compact design, making it suitable for space-constrained applications.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this EPROM can withstand elevated temperatures without compromising performance.

Organization: 4KX8

The 4KX8 organization allows for efficient storage and retrieval of data in the EPROM.

Output Characteristics: 3-STATE

3-state output characteristics provide flexibility in controlling the output signals, enhancing the functionality of the EPROM.

Minimum Operating Temperature: 0 °C

The EPROM can operate effectively even at low temperatures, ensuring reliable performance in diverse environmental conditions.

Terminal Position: DUAL

Dual terminal position offers enhanced connectivity options and versatility in integrating the EPROM into different systems.

Temperature Grade: COMMERCIAL

Commercial temperature grade makes this EPROM suitable for a wide range of commercial applications.

Technology: MOS

MOS technology in the EPROM ensures high-speed operation and low power consumption, making it an efficient choice for various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure and reliable connections, ensuring stable performance of the EPROM in demanding environments.

No. of Words: 4096 words

4096 words capacity allows for storing a significant amount of data in the EPROM, making it suitable for various memory-intensive applications.

Memory Width: 8

Memory width of 8 bits allows for storing and processing data efficiently in the EPROM.

Terminal Pitch: 2.54 mm

Terminal pitch of 2.54 mm enables easy soldering and connection of the EPROM in the circuit board.

No. of Words Code: 4K

Using 4K as the code for the number of words simplifies identification and compatibility in systems that support this EPROM.

Memory Density: 32768 bit

High memory density of 32768 bits provides ample storage capacity for data in the EPROM, making it a reliable choice for memory-intensive applications.

Maximum Access Time: 500 ns

With a maximum access time of 500 ns, this EPROM offers fast data retrieval and processing, enhancing overall system performance.

Technical Specifications

EPROM TMS2532-50JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

500 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

32768 bit

Memory Width:

8

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

EPROMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS2532-50JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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