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TMS2732A-20JP4

Texas Instruments

TMS2732A-20JP4 by Texas Instruments

TMS2732A-20JP4 by Texas Instruments is a 4KX8 EPROM with 3-STATE output, operating at 5V. It has a max access time of 200ns and uses NMOS technology. Suitable for applications requiring fast memory access in devices with parallel data processing needs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,816 parts In-Stock

1+ parts

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6,816

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Digiode

USA . 4,190 parts In-Stock

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4,190

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,227 parts In-Stock

1+ parts

$3.426

100+ parts

-

1k+ parts

$3.950

10k+ parts

-

2,227

$3.426

-

$3.950

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DigiPath Technology Company

USA . 217 parts In-Stock

1+ parts

$3.772

100+ parts

-

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217

$3.772

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ChromeModa Solutions

Germany . 6,894 parts In-Stock

1+ parts

$3.849

100+ parts

$3.156

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-

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6,894

$3.849

$3.156

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IDEA Electronic Components Group

UK . 1,753 parts In-Stock

1+ parts

$3.849

100+ parts

-

1k+ parts

$3.464

10k+ parts

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1,753

$3.849

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$3.464

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AZTECH Wire

Italy . 482 parts In-Stock

1+ parts

$8.881

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482

$8.881

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One Stop Electronics

USA . 1,162 parts In-Stock

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$28.000

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1,162

$28.000

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Corphita

USA . 1,735 parts In-Stock

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1,735

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Overview

Unlock the power of innovation with the TMS2732A-20JP4 EPROM from Texas Instruments. Known for their high-quality products, Texas Instruments delivers reliable solutions for a wide range of applications. This EPROM offers customers exceptional value with its 4Kx8 organization, 3-STATE output characteristics, and fast 200 ns maximum access time. Whether you're working on consumer electronics, automotive systems, or industrial equipment, this versatile EPROM is sure to meet your memory storage needs with ease. Experience the benefits of Texas Instruments' cutting-edge technology today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material ensures durability and reliability, making this EPROM a good choice for applications requiring robust components.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this EPROM compatible with standard electronics and power systems, allowing for easy integration into existing setups.

Organization: 4KX8

With an organization of 4KX8, this EPROM offers a balance between memory capacity and retrieval speed, making it suitable for a wide range of data storage and access requirements.

Technology: NMOS

Utilizing NMOS technology, this EPROM delivers fast access times and efficient performance, making it ideal for applications where speed and reliability are critical.

Maximum Access Time: 200 ns

With a maximum access time of 200 ns, this EPROM ensures quick data retrieval and processing, making it suitable for high-speed applications where latency is a concern.

Technical Specifications

EPROM TMS2732A-20JP4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T24

Length:

31.75 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-10 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

21

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Sub-Category:

EPROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS2732A-20JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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