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TMS27C210A-12JL4

Texas Instruments

TMS27C210A-12JL4 by Texas Instruments

TMS27C210A-12JL4 by Texas Instruments is a 64KX16 EPROM with 3-STATE output, operating at 5V. It has a max access time of 120ns and memory density of 1048576 bit. Commonly used in commercial applications requiring fast data retrieval and storage capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,173 parts In-Stock

1+ parts

-

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3,173

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Digiode

USA . 2,554 parts In-Stock

1+ parts

-

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2,554

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,007 parts In-Stock

1+ parts

$3.189

100+ parts

-

1k+ parts

$3.712

10k+ parts

-

1,007

$3.189

-

$3.712

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DigiPath Technology Company

USA . 481 parts In-Stock

1+ parts

$3.511

100+ parts

$3.230

1k+ parts

-

10k+ parts

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481

$3.511

$3.230

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ChromeModa Solutions

Germany . 3,435 parts In-Stock

1+ parts

$3.583

100+ parts

$2.938

1k+ parts

-

10k+ parts

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3,435

$3.583

$2.938

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IDEA Electronic Components Group

UK . 2,002 parts In-Stock

1+ parts

$3.583

100+ parts

-

1k+ parts

$3.225

10k+ parts

-

2,002

$3.583

-

$3.225

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One Stop Electronics

USA . 1,222 parts In-Stock

1+ parts

$5.000

100+ parts

-

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10k+ parts

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1,222

$5.000

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AZTECH Wire

Italy . 654 parts In-Stock

1+ parts

$18.779

100+ parts

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654

$18.779

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Corphita

USA . 333 parts In-Stock

1+ parts

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333

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Overview

Explore the endless possibilities of data storage and retrieval with the TMS27C210A-12JL4 EPROM by Texas Instruments. Designed with precision and innovation, this memory device offers unparalleled reliability and performance, making it ideal for a wide range of applications. Whether you're looking to upgrade your system or enhance your project, this EPROM delivers exceptional value, efficiency, and functionality. Trust Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations. Unlock the power of the TMS27C210A-12JL4 and experience seamless operation like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and protection for the EPROM, ensuring it can withstand harsh environments.

Input/Output Type: COMMON

Common input/output type simplifies connection and integration with other components or systems.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with many existing systems and components.

Memory Density: 1048576 bit

With a high memory density, this EPROM can store a large amount of data efficiently.

Maximum Access Time: 120 ns

Fast access time ensures quick retrieval of data, improving overall performance.

Technical Specifications

EPROM TMS27C210A-12JL4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T40

Length:

52.07 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

40

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C210A-12JL4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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