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TMS27C128-120JL

Texas Instruments

TMS27C128-120JL by Texas Instruments

TMS27C128-120JL by Texas Instruments is a 16KX8 EPROM with 120 ns access time, 3-STATE output, and 5V nominal voltage. It is commonly used in commercial applications requiring fast memory access and reliable data storage.

Median Price

$11.040

Lifecycle Status

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American Microsemiconductor Inc.

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Component Electronics Inc.

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Digital Electronic Gebert Verwaltungs UG

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Cyclops Electronics Ltd

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First Choice Components Inc.

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Atlantic Semiconductor

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Corohmni

South Africa . 57 parts In-Stock

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One Stop Electronics

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Parana Technologies

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DigiPath Technology Company

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ChromeModa Solutions

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IDEA Electronic Components Group

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Overview

Unleash the power of cutting-edge technology with the TMS27C128-120JL EPROM by Texas Instruments. Built to exceed industry standards, this ceramic, glass-sealed marvel offers unparalleled reliability and performance. Whether you're in need of secure data storage or rapid program execution, the TMS27C128-120JL delivers with its 16Kx8 organization and blazing-fast 120 ns access time. Trust in Texas Instruments' legacy of excellence and elevate your projects to new heights with this game-changing EPROM.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic body material provides durability and reliability, making this EPROM a long-lasting choice.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into existing circuit designs, enhancing overall compatibility.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode ensures efficient and independent memory access, improving overall performance.

Input/Output Type: COMMON

The common input/output type simplifies connections and interactions with other components, enhancing usability.

Nominal Supply Voltage: 5V

The 5V nominal supply voltage offers stable power distribution, ensuring consistent operation and reliability.

Power Supplies: 5V

The 5V power supply further enhances the stability and efficiency of this EPROM.

No. of Terminals: 28

The 28 terminals provide ample connectivity options, making this EPROM versatile and adaptable to various systems.

Package Style: IN-LINE, WINDOW

The in-line window package style allows for easy monitoring and troubleshooting, improving maintenance and troubleshooting processes.

Maximum Operating Temperature: 70 °C

The 70°C maximum operating temperature ensures reliable performance even in demanding environmental conditions.

Organization: 16KX8

The 16KX8 organization offers a balanced combination of storage capacity and data retrieval speed, making this EPROM suitable for a wide range of applications.

Technical Specifications

EPROM TMS27C128-120JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C128-120JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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