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TMS27C512JL4

Texas Instruments

TMS27C512JL4 by Texas Instruments

TMS27C512JL4 by Texas Instruments is a 64KX8 EPROM with 3-STATE output, operating at 5V. It features an access time of 250ns and memory density of 524288 bits. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,644 parts In-Stock

1+ parts

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4,644

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Vyrian

USA . 4,428 parts In-Stock

1+ parts

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4,428

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,033 parts In-Stock

1+ parts

$4.382

100+ parts

-

1k+ parts

$4.799

10k+ parts

-

2,033

$4.382

-

$4.799

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DigiPath Technology Company

USA . 987 parts In-Stock

1+ parts

$4.826

100+ parts

$4.439

1k+ parts

-

10k+ parts

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987

$4.826

$4.439

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ChromeModa Solutions

Germany . 1,533 parts In-Stock

1+ parts

$4.924

100+ parts

$4.038

1k+ parts

-

10k+ parts

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1,533

$4.924

$4.038

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IDEA Electronic Components Group

UK . 1,359 parts In-Stock

1+ parts

$4.924

100+ parts

-

1k+ parts

$4.432

10k+ parts

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1,359

$4.924

-

$4.432

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AZTECH Wire

Italy . 894 parts In-Stock

1+ parts

$7.289

100+ parts

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894

$7.289

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One Stop Electronics

USA . 831 parts In-Stock

1+ parts

$9.000

100+ parts

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831

$9.000

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Corphita

USA . 603 parts In-Stock

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603

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Overview

Boost your electronic projects with the TMS27C512JL4 EPROM by Texas Instruments. Known for its superior quality and reliability, Texas Instruments delivers cutting-edge technology in a ceramic, glass-sealed package. This EPROM's 64KX8 organization and 3-STATE output characteristics make it ideal for applications requiring fast access times and high memory density. With a nominal supply voltage of 5V and low standby current, this UVPROM offers exceptional value and performance. Upgrade your designs today with the TMS27C512JL4 EPROM from Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides excellent durability and protection for the EPROM, ensuring a longer lifespan and reliable performance.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of each function within the EPROM, providing flexibility and efficient performance.

Nominal Supply Voltage / Vsup: 5V

A standard supply voltage of 5V makes it compatible with a wide range of systems and easy to integrate into existing setups.

Organization: 64KX8

The 64KX8 organization allows for efficient storage and retrieval of data, making the EPROM suitable for various applications that require memory management.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the EPROM energy-efficient and reliable in noisy environments.

Technical Specifications

EPROM TMS27C512JL4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C512JL4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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