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TMS2532-35JP4

Texas Instruments

TMS2532-35JP4 by Texas Instruments

TMS2532-35JP4 by Texas Instruments is a 4KX8 EPROM with 3-STATE output, 32768 bit memory density, and 350 ns access time. It is commonly used in commercial applications requiring fast data retrieval and storage in devices operating b/w 0 to 70 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,783 parts In-Stock

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4,783

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Vyrian

USA . 4,386 parts In-Stock

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4,386

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Distributors (Availability)

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Parana Technologies

USA . 1,986 parts In-Stock

1+ parts

$5.296

100+ parts

-

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$5.925

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1,986

$5.296

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$5.925

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DigiPath Technology Company

USA . 2,367 parts In-Stock

1+ parts

$5.832

100+ parts

$5.365

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2,367

$5.832

$5.365

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ChromeModa Solutions

Germany . 1,267 parts In-Stock

1+ parts

$5.951

100+ parts

$4.880

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1,267

$5.951

$4.880

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IDEA Electronic Components Group

UK . 312 parts In-Stock

1+ parts

$5.951

100+ parts

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$5.356

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312

$5.951

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$5.356

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AZTECH Wire

Italy . 503 parts In-Stock

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$14.239

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503

$14.239

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One Stop Electronics

USA . 220 parts In-Stock

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$23.000

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220

$23.000

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Corphita

USA . 2,009 parts In-Stock

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Overview

Upgrade your electronic devices with the cutting-edge TMS2532-35JP4 EPROM by Texas Instruments. Known for their superior quality and innovation, Texas Instruments delivers top-notch products that meet the highest industry standards. This EPROM offers a wide range of applications, providing customers with reliable memory storage solutions for various electronic needs. Experience the value and benefits of this high-performance EPROM, designed to enhance the efficiency and functionality of your devices. Trust Texas Instruments to deliver exceptional products that exceed expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent durability and heat resistance, making the EPROM product reliable for long-term use.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various electronic circuit designs, optimizing space utilization.

Input/Output Type: COMMON

Common input/output type ensures compatibility with a wide range of devices and systems, enhancing flexibility in application.

No. of Terminals: 24

Having a sufficient number of terminals facilitates easy connectivity and communication with other components in a circuit.

Package Style (Meter): IN-LINE

In-line package style enables easy installation and secure mounting within electronic devices or systems.

Maximum Operating Temperature: 70 °C

High maximum operating temperature tolerance ensures reliable performance even in environments with elevated temperatures.

Organization: 4KX8

Organized in 4KX8 configuration, allowing for efficient storage and retrieval of data in digital systems or applications.

Output Characteristics: 3-STATE

3-state output characteristics provide additional flexibility in controlling data flow and signal transmission within a circuit.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures the EPROM can function reliably in colder environments as well.

Terminal Position: DUAL

Dual terminal position offers redundancy and ensures secure connections for stable performance in electronic systems.

Temperature Grade: COMMERCIAL

Commercial-grade temperature rating makes the EPROM suitable for a wide range of commercial applications and electronic devices.

Technology: MOS

MOS technology enables high-speed operation and low power consumption, making the EPROM energy-efficient and responsive.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides robust mechanical support and easy soldering for secure installation in circuit boards.

No. of Words: 4096 words

4096 words memory capacity offers ample storage for data and instructions, suitable for various computing and digital applications.

Memory Width: 8

Memory width of 8 bits allows for storing and retrieving data in 8-bit chunks, enhancing data processing efficiency and speed.

Terminal Pitch: 2.54 mm

Terminal pitch of 2.54 mm enables easy connections to circuit boards and components, facilitating efficient circuit integration.

No. of Words Code: 4K

Using 4K words code simplifies addressing and access to the memory contents, improving data management and retrieval.

Memory Density: 32768 bit

High memory density of 32768 bits allows for storing a large volume of data in a compact EPROM chip, optimizing space utilization.

Maximum Access Time: 350 ns

Fast maximum access time of 350 ns ensures quick data retrieval and processing, enhancing overall system performance.

Technical Specifications

EPROM TMS2532-35JP4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

350 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

32768 bit

Memory Width:

8

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Sub-Category:

EPROMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS2532-35JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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