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TMS27C512JL

Texas Instruments

TMS27C512JL by Texas Instruments

TMS27C512JL by Texas Instruments is a 64KX8 EPROM with 250ns access time, 3-STATE output, and operates at 5V. Commonly used in commercial applications for storing data due to its 524288-bit memory density and parallel interface.

Median Price

$10.250

Lifecycle Status

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Freelance Electronics

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Bristol Electronics

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Component Electronics Inc.

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Forefront Electronics and Design

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Digiode

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MRC Electronics

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Electronics Depot

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Mentor Electronics Marketing, LLC

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Electronic Expediters

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ACDS - Activité Composants Distribution Service

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Manoshevitz Elec. Sales

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Inland Empire Components Inc.

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PC Components Company LLC

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ECAB

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Diverse Electronics

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LWI Electronics Inc

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Semi Source

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Mil-Aero Solutions, Inc.

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First Choice Components Inc.

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NAC Semi

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Sinequanon

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Parana Technologies

USA . 39 parts In-Stock

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DigiPath Technology Company

USA . 1,329 parts In-Stock

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ChromeModa Solutions

Germany . 5,157 parts In-Stock

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IDEA Electronic Components Group

UK . 375 parts In-Stock

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AZTECH Wire

Italy . 331 parts In-Stock

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One Stop Electronics

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Lixinc

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Corphita

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Perfect Parts

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Overview

Unlock the power of reliable data storage with the TMS27C512JL by Texas Instruments. Crafted with precision and expertise, this EPROM is a testament to quality and innovation. Perfect for a wide range of applications, this memory chip offers seamless operation and enhanced performance. Trust in Texas Instruments for unmatched value, benefits, and advantages that cater to your needs. Experience the difference with the TMS27C512JL - where quality meets excellence.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and protection, making this EPROM suitable for harsh operating environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this EPROM compatible with standard power supplies, ensuring ease of integration.

No. of Terminals: 28

Having 28 terminals allows for sufficient connectivity options, enabling versatile applications of this EPROM.

Organization: 64KX8

With an organization of 64KX8, this EPROM offers a large memory capacity and efficient data retrieval, suitable for storing a significant amount of information.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and higher reliability, making this EPROM energy-efficient and long-lasting.

Maximum Access Time: 250 ns

The fast maximum access time of 250 ns allows for quick data access and retrieval, enhancing the performance of this EPROM in time-critical applications.

Technical Specifications

EPROM TMS27C512JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C512JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

NSN

5962-01-260-3013, 5962012603013

NIIN

012603013

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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