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SMJ27C010A-15JM

Texas Instruments

SMJ27C010A-15JM by Texas Instruments

The Texas Instruments SMJ27C010A-15JM is a 128Kx8 EPROM with 3-STATE output, operating at 5V. It features a max access time of 150ns and is designed for military-grade applications requiring reliable non-volatile memory storage. With a package style of IN-LINE, WINDOW and through-hole terminal form, this CMOS technology-based UVPROM offers high memory density of 1048576 bits in a compact size suitable for harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,272 parts In-Stock

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Digiode

USA . 2,582 parts In-Stock

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2,582

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Distributors (Availability)

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Parana Technologies

USA . 1,042 parts In-Stock

1+ parts

$3.802

100+ parts

-

1k+ parts

$4.293

10k+ parts

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1,042

$3.802

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$4.293

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DigiPath Technology Company

USA . 27 parts In-Stock

1+ parts

$4.187

100+ parts

$3.852

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27

$4.187

$3.852

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IDEA Electronic Components Group

UK . 538 parts In-Stock

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$4.272

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$3.845

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538

$4.272

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$3.845

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ChromeModa Solutions

Germany . 178 parts In-Stock

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$4.272

100+ parts

$3.503

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178

$4.272

$3.503

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One Stop Electronics

USA . 336 parts In-Stock

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$18.000

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336

$18.000

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AZTECH Wire

Italy . 872 parts In-Stock

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$19.195

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872

$19.195

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Corphita

USA . 540 parts In-Stock

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540

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Overview

Unleash the power of technology with the Texas Instruments SMJ27C010A-15JM EPROM. Known for their top-notch quality and reliability, Texas Instruments offers a cutting-edge solution for your memory needs. Ideal for military-grade applications, this EPROM provides 128Kx8 organization and 3-STATE output characteristics. With a wide temperature range and low standby current, this product ensures optimal performance even in the most demanding environments. Trust Texas Instruments to deliver exceptional value and performance with the SMJ27C010A-15JM EPROM. Elevate your projects with the best in the industry.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material ensures durability and protection for the EPROM chip, making it a reliable choice for long-term use.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent control of read and write operations, providing flexibility and efficiency in data access.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making integration into existing systems straightforward.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high noise immunity, enhancing the overall performance and energy efficiency of the EPROM.

Memory Density: 1048576 bit

With a high memory density of 1Mb, this EPROM can store a large amount of data, making it suitable for applications requiring extensive program storage.

Technical Specifications

EPROM SMJ27C010A-15JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Length:

41.91 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

SMJ27C010A-15JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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