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TMS276417JP4

Texas Instruments

TMS276417JP4 by Texas Instruments

TMS276417JP4 by Texas Instruments is an 8KX8 EPROM with 65536 bit memory density, operating at 5V. It features a 170 ns max access time and supports asynchronous mode. Ideal for applications requiring reliable non-volatile memory storage in industrial environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,102 parts In-Stock

1+ parts

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6,102

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Digiode

USA . 1,386 parts In-Stock

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1,386

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Distributors (Availability)

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One Stop Electronics

USA . 1,474 parts In-Stock

1+ parts

$1.000

100+ parts

-

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1,474

$1.000

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Parana Technologies

USA . 1,850 parts In-Stock

1+ parts

$3.720

100+ parts

-

1k+ parts

$4.222

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1,850

$3.720

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$4.222

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DigiPath Technology Company

USA . 2,130 parts In-Stock

1+ parts

$4.096

100+ parts

$3.769

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-

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2,130

$4.096

$3.769

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ChromeModa Solutions

Germany . 3,980 parts In-Stock

1+ parts

$4.180

100+ parts

$3.428

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3,980

$4.180

$3.428

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IDEA Electronic Components Group

UK . 1,751 parts In-Stock

1+ parts

$4.180

100+ parts

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1k+ parts

$3.762

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1,751

$4.180

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$3.762

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AZTECH Wire

Italy . 462 parts In-Stock

1+ parts

$10.844

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462

$10.844

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Corphita

USA . 919 parts In-Stock

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919

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Overview

Unlock the power of high-quality memory solutions with the TMS276417JP4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments offers top-notch EPROM products like this one, perfect for a wide range of applications. Customers can rely on the value and benefits that come with choosing this product, from its reliable performance to its advanced features. Experience seamless operation and enhanced efficiency with the TMS276417JP4, setting new standards in memory technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material offers high durability and reliability for the EPROM, ensuring long-term performance.

No. of Words: 8192 words

This high number of words allows for storing a large amount of data in the EPROM, making it suitable for various applications.

Output Characteristics: 3-STATE

The 3-STATE output capability allows for efficient data transfer and control, enhancing the overall functionality of the EPROM.

Technology: NMOS

The NMOS technology used in this EPROM ensures fast and reliable performance, making it a reliable choice for memory storage.

Technical Specifications

EPROM TMS276417JP4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

170 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-10 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

21

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Sub-Category:

EPROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMS276417JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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