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5962-01-357-9827

Texas Instruments

5962-01-357-9827 by Texas Instruments

Texas Instruments' 5962-01-357-9827 EPROM features 32KX8 organization, 3-STATE output, and 262144-bit memory density. Ideal for industrial applications with a temperature range of -40 to 85 °C, this CMOS technology chip has a programming voltage of 13V and operates at a max access time of 250 ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,958 parts In-Stock

1+ parts

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5,958

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Digiode

USA . 1,695 parts In-Stock

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1,695

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Distributors (Availability)

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Native Components

USA . 186 parts In-Stock

1+ parts

$0.720

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-

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186

$0.720

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Northwest PG Solutions

USA . 1,963 parts In-Stock

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$0.792

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1,963

$0.792

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Parana Technologies

USA . 1,510 parts In-Stock

1+ parts

$4.750

100+ parts

$441.103

1k+ parts

$4.275

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-

1,510

$4.750

$441.103

$4.275

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DigiPath Technology Company

USA . 325 parts In-Stock

1+ parts

$5.230

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325

$5.230

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ChromeModa Solutions

Germany . 2,315 parts In-Stock

1+ parts

$5.337

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$4.376

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2,315

$5.337

$4.376

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IDEA Electronic Components Group

UK . 422 parts In-Stock

1+ parts

$5.337

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$4.803

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422

$5.337

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$4.803

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One Stop Electronics

USA . 892 parts In-Stock

1+ parts

$11.000

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892

$11.000

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AZTECH Wire

Italy . 366 parts In-Stock

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$12.714

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366

$12.714

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Corphita

USA . 600 parts In-Stock

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600

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Overview

Experience premium quality and reliability with the 5962-01-357-9827 EPROM by Texas Instruments. This top-of-the-line product offers cutting-edge technology for industrial applications, providing a seamless and efficient user experience. With Texas Instruments' reputation for excellence in manufacturing, you can trust that this EPROM delivers unparalleled performance and durability. Upgrade your systems with this EPROM's advanced features and unlock new possibilities for your projects. Choose Texas Instruments for unmatched value and innovation in semiconductor solutions.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent protection to the EPROM chip and ensures reliability and durability in various operating conditions.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V allows for compatibility with a wide range of systems and ensures stable performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this EPROM is suitable for industrial applications where higher temperatures may be encountered.

Organization: 32KX8

The organization of 32KX8 allows for efficient storage and retrieval of data, making this EPROM an optimal choice for memory-intensive applications.

Technology: CMOS

The CMOS technology used in this EPROM offers low power consumption and high noise immunity, resulting in improved performance and efficiency.

Technical Specifications

EPROM 5962-01-357-9827 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T28

Memory Density:

262144 bit

Memory Width:

8

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-357-9827 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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