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5962-01-421-9043

Texas Instruments

5962-01-421-9043 by Texas Instruments

Texas Instruments' 5962-01-421-9043 EPROM features 32KX8 organization, 262144-bit memory density, and 150ns access time. Ideal for applications requiring a CMOS technology-based device with a 5V supply voltage and common I/O type.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,049 parts In-Stock

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Digiode

USA . 3,083 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 5 parts In-Stock

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Native Components

USA . 308 parts In-Stock

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$0.180

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$0.173

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Northwest PG Solutions

USA . 983 parts In-Stock

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$0.198

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$0.175

983

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Parana Technologies

USA . 405 parts In-Stock

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$2.653

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$3.143

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405

$2.653

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ChromeModa Solutions

Germany . 2,162 parts In-Stock

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$2.981

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$2.444

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$2.981

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IDEA Electronic Components Group

UK . 39 parts In-Stock

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$2.981

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$2.683

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One Stop Electronics

USA . 140 parts In-Stock

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$12.000

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AZTECH Wire

Italy . 231 parts In-Stock

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$18.710

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Corphita

USA . 5,000 parts In-Stock

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DigiPath Technology Company

USA . 2,145 parts In-Stock

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Overview

Unlock the power of innovation with the 5962-01-421-9043 EPROM by Texas Instruments. Crafted with precision in a ceramic rectangular package, this versatile component offers a seamless common input/output type and a reliable 5V supply voltage. Perfect for a wide range of applications, this 32KX8 memory device provides a commercial-grade solution that ensures optimal performance and efficiency. Experience superior quality and unmatched value with Texas Instruments' EPROM, where cutting-edge technology meets unparalleled reliability. Elevate your projects with the best in the industry and unlock endless possibilities today!

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer excellent thermal properties and durability, making this EPROM resistant to high temperatures and mechanical stress.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard electronic systems and provides stable performance.

No. of Terminals: 28

With 28 terminals, this EPROM offers multiple connection options and flexibility for integration into different circuit designs.

Output Characteristics: 3-STATE

The 3-STATE output feature allows the EPROM to effectively drive bus lines and reduce power consumption when the output is not needed.

Programming Voltage (V): 13

A programming voltage of 13V enables fast and reliable programming of the EPROM, ensuring efficient data storage and retrieval.

Technology: CMOS

Using CMOS technology results in low power consumption, high noise immunity, and compatibility with a wide range of digital systems.

Memory Width: 8

With a memory width of 8 bits, this EPROM can store and retrieve data in chunks of 8 bits at a time, enhancing data processing efficiency.

Maximum Access Time: 150 ns

The fast maximum access time of 150 ns allows for quick data retrieval and efficient operation of the EPROM in time-sensitive applications.

Technical Specifications

EPROM 5962-01-421-9043 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T28

Memory Density:

262144 bit

Memory Width:

8

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-421-9043 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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