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TMS27C510-15JL

Texas Instruments

TMS27C510-15JL by Texas Instruments

TMS27C510-15JL by Texas Instruments is a 64KX8 EPROM with 150 ns access time, operating at 5V. It features 3-STATE output characteristics and uses CMOS technology for parallel data transfer applications. The package style is IN-LINE, WINDOW, making it suitable for commercial temperature grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,462 parts In-Stock

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Digiode

USA . 1,339 parts In-Stock

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1,339

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Distributors (Availability)

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One Stop Electronics

USA . 1,170 parts In-Stock

1+ parts

$2.000

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$2.000

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Parana Technologies

USA . 4 parts In-Stock

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$2.651

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$3.141

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$3.141

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DigiPath Technology Company

USA . 469 parts In-Stock

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$2.919

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469

$2.919

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ChromeModa Solutions

Germany . 1,133 parts In-Stock

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$2.979

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$2.443

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1,133

$2.979

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IDEA Electronic Components Group

UK . 255 parts In-Stock

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$2.979

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$2.681

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255

$2.979

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$2.681

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AZTECH Wire

Italy . 650 parts In-Stock

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$8.717

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650

$8.717

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Corphita

USA . 2,454 parts In-Stock

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Overview

Enhance your electronic projects with the reliable TMS27C510-15JL EPROM by Texas Instruments. Crafted from high-quality ceramic and metal-sealed cofired material, this versatile memory IC offers a wide range of applications in various industries. With a 64KX8 organization and 3-STATE output characteristics, this EPROM delivers seamless performance and efficient operation. Let Texas Instruments elevate your designs with cutting-edge technology and unparalleled reliability. Upgrade your systems today and experience the difference with TMS27C510-15JL.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides durability and protection for the EPROM, ensuring it can withstand harsh operating conditions.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without the need for a centralized clock signal, providing flexibility in design.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage ensures compatibility with most systems and easy integration.

Organization: 64KX8

Offers a large memory capacity of 64 kilobits organized in an 8-bit configuration, suitable for storing a significant amount of data.

Technology: CMOS

Utilizes CMOS technology, which is known for low power consumption and high noise immunity, making the EPROM energy-efficient and reliable.

Maximum Access Time: 150 ns

Provides fast access to data, making the EPROM efficient for quick read/write operations.

Technical Specifications

EPROM TMS27C510-15JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T32

Length:

41.91 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C510-15JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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