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TMS27C128JL

Texas Instruments

TMS27C128JL by Texas Instruments

TMS27C128JL by Texas Instruments is a 16KX8 EPROM with 250ns access time, 3-STATE output, and 5V nominal voltage. It is used in commercial applications requiring reliable non-volatile memory storage with a memory density of 131072 bits.

Median Price

$17.150

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Forefront Electronics and Design

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Digiode

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Manoshevitz Elec. Sales

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Digital Electronic Gebert Verwaltungs UG

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Inland Empire Components Inc.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ECAB

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Prism Electronics

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MRC Electronics

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Cyclops Electronics Ltd

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Electronic Expediters

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Mentor Electronics Marketing, LLC

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J & M Industries LLC

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Holdelec - ElecDif-Pro

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GES GmbH

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Fibra_Brandt Electronic GMBH

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Mil-Aero Solutions, Inc.

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Pride Electronics

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Parana Technologies

USA . 2,095 parts In-Stock

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DigiPath Technology Company

USA . 500 parts In-Stock

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$4.996

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IDEA Electronic Components Group

UK . 2,128 parts In-Stock

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ChromeModa Solutions

Germany . 1,142 parts In-Stock

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AZTECH Wire

Italy . 486 parts In-Stock

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One Stop Electronics

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Component Stockers USA

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Overview

Discover the superior quality and reliability of the TMS27C128JL by Texas Instruments, a leading manufacturer in the industry. This EPROM offers exceptional value with its versatile applications and advanced features. From ensuring data security to enhancing system performance, this product provides numerous benefits for customers seeking efficient memory solutions. Trust in Texas Instruments for cutting-edge technology that delivers unmatched advantages for your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides a durable and reliable housing for the EPROM, ensuring long-term stability and protection against environmental factors.

Operating Mode: ASYNCHRONOUS

Allows for fast and independent access to memory locations, enhancing the efficiency of data retrieval and storage.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage ensures compatibility with existing systems and ease of integration.

Memory Width: 8

8-bit memory width allows for efficient storage and retrieval of data in parallel, improving performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the EPROM energy-efficient and reliable.

Maximum Access Time: 250 ns

Fast access time ensures quick read and write operations, enhancing overall system performance.

Technical Specifications

EPROM TMS27C128JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C128JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

NSN

5962-14-450-4645, 5962144504645

NIIN

144504645

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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