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TMS2764-35JL

Texas Instruments

TMS2764-35JL by Texas Instruments

TMS2764-35JL by Texas Instruments is an EPROM with 8KX8 organization, 65536 bit memory density, and 350 ns max access time. It operates at a nominal voltage of 5V and has a programming voltage of 21V. Commonly used in commercial applications requiring fast memory access and reliable data storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,651 parts In-Stock

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8,651

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Digiode

USA . 4,300 parts In-Stock

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4,300

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Q Components

USA . 2,398 parts In-Stock

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2,398

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ECAB

Sweden . 28 parts In-Stock

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28

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Pegasus Components GmbH

Germany . 11 parts In-Stock

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11

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Prism Electronics

USA . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 940 parts In-Stock

1+ parts

$2.497

100+ parts

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$2.988

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940

$2.497

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$2.988

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DigiPath Technology Company

USA . 1,103 parts In-Stock

1+ parts

$2.750

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$2.530

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1,103

$2.750

$2.530

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ChromeModa Solutions

Germany . 2,903 parts In-Stock

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$2.806

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$2.301

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$2.806

$2.301

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IDEA Electronic Components Group

UK . 1,541 parts In-Stock

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$2.806

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$2.525

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1,541

$2.806

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$2.525

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AZTECH Wire

Italy . 609 parts In-Stock

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$15.613

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609

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One Stop Electronics

USA . 1,404 parts In-Stock

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$24.000

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$24.000

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Corphita

USA . 1,033 parts In-Stock

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Perfect Parts

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Overview

Enhance your electronics projects with the TMS2764-35JL EPROM by Texas Instruments. With a reputation for superior quality and reliability, Texas Instruments delivers cutting-edge technology in a durable ceramic package. Ideal for applications requiring non-volatile memory storage, this EPROM offers customers unmatched value, benefits, and advantages. Upgrade your designs with ease and efficiency using the TMS2764-35JL EPROM from Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide better thermal stability and durability, making this EPROM reliable for various operating conditions.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V allows for compatibility with a wide range of electronic systems, making it versatile for use in different applications.

No. of Terminals: 28

Having 28 terminals offers more input/output options, enabling greater flexibility in system connectivity and integration.

Output Characteristics: 3-STATE

The 3-STATE output allows the EPROM to drive multiple loads, providing efficient signal control and reducing power consumption.

Memory Density: 65536 bit

With a high memory density of 65536 bits, this EPROM can store a large amount of data, making it suitable for applications requiring extensive memory capacity.

Technical Specifications

EPROM TMS2764-35JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

350 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T28

Memory Density:

65536 bit

Memory Width:

8

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Programming Voltage (V):

21

Qualification:

Not Qualified

Sub-Category:

EPROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS2764-35JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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