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5962-8766104XA

Texas Instruments

5962-8766104XA by Texas Instruments

The Texas Instruments 5962-8766104XA is a MIL-STD-883 EPROM with 16KX8 organization, operating at 5V. It features a max access time of 170ns and memory density of 131072 bits. Ideal for military applications requiring reliable, high-density memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,903 parts In-Stock

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Digiode

USA . 3,959 parts In-Stock

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3,959

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NAC Semi

USA . 26 parts In-Stock

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26

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Native Components

USA . 733 parts In-Stock

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$0.455

100+ parts

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$0.437

733

$0.455

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$0.437

Northwest PG Solutions

USA . 763 parts In-Stock

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$0.501

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$0.442

763

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Parana Technologies

USA . 231 parts In-Stock

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$4.524

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$420.110

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$4.071

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231

$4.524

$420.110

$4.071

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DigiPath Technology Company

USA . 1,456 parts In-Stock

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$4.981

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$4.583

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1,456

$4.981

$4.583

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ChromeModa Solutions

Germany . 2,936 parts In-Stock

1+ parts

$5.083

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$4.168

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2,936

$5.083

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IDEA Electronic Components Group

UK . 1,736 parts In-Stock

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$5.083

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$4.575

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1,736

$5.083

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$4.575

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AZTECH Wire

Italy . 395 parts In-Stock

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$14.965

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$14.965

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Semicontronic

India . 338 parts In-Stock

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$17.000

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$16.575

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$16.490

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338

$17.000

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$16.490

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One Stop Electronics

USA . 787 parts In-Stock

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$24.000

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787

$24.000

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Corphita

USA . 3,997 parts In-Stock

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Fulton Briggs Corp.

USA . 1,684 parts In-Stock

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Overview

Unlock the power of advanced technology with the Texas Instruments 5962-8766104XA EPROM. Known for their superior quality and reliability, Texas Instruments offers a cutting-edge solution for various applications in military-grade settings. With a wide operating temperature range and fast access time, this EPROM delivers high performance and efficiency, making it the ideal choice for demanding environments. Experience the value and benefits of Texas Instruments' EPROM technology and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material ensures durability and protection for the EPROM, making it suitable for harsh operating environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent timing of read and write operations, providing flexibility and efficiency in data processing.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V ensures compatibility with common power sources, making it easy to integrate into existing systems.

No. of Words: 16384 words

With a large capacity of 16384 words, this EPROM can store a significant amount of data, ideal for applications requiring extensive memory storage.

Technology: CMOS

The use of CMOS technology results in low power consumption and high noise immunity, enhancing the efficiency and reliability of the EPROM.

Memory Density: 131072 bit

The high memory density of 131072 bits allows for storing a large amount of data in a compact space, making the EPROM space-efficient and cost-effective.

Technical Specifications

EPROM 5962-8766104XA attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

170 ns

JESD-30 Code:

R-GDIP-T28

JESD-609 Code:

e0

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16KX8

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Screening Level:

MIL-STD-883

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Trade Compliance

5962-8766104XA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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