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TMS27LV010A-30JE

Texas Instruments

TMS27LV010A-30JE by Texas Instruments

TMS27LV010A-30JE by Texas Instruments is a 128KX8 EPROM with 3.3V nominal voltage, operating in asynchronous mode. It features 300 ns max access time and is commonly used in industrial applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,393 parts In-Stock

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Digiode

USA . 1,216 parts In-Stock

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One Stop Electronics

USA . 1,626 parts In-Stock

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$1.000

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$1.000

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Parana Technologies

USA . 27 parts In-Stock

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$3.766

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$349.692

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$3.389

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27

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$3.389

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DigiPath Technology Company

USA . 2,124 parts In-Stock

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$4.146

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$4.146

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ChromeModa Solutions

Germany . 3,496 parts In-Stock

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$4.231

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$3.469

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IDEA Electronic Components Group

UK . 1,943 parts In-Stock

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$4.231

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$3.808

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1,943

$4.231

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AZTECH Wire

Italy . 768 parts In-Stock

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$8.641

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Corphita

USA . 4,051 parts In-Stock

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Overview

Elevate your electronic designs with the TMS27LV010A-30JE EPROM by Texas Instruments, a top-tier manufacturer known for superior quality and reliability. This versatile memory IC offers 128KX8 organization, 3-STATE output characteristics, and an industrial temperature grade, making it ideal for a wide range of applications. With a nominal supply voltage of 3.3V and maximum access time of 300ns, this product delivers exceptional performance while consuming just 30mA of maximum supply current. Upgrade your projects with the value and benefits of Texas Instruments' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material provides excellent durability and protection for the EPROM, ensuring reliable performance in various environments.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V nominal supply voltage allows for efficient power consumption and compatibility with modern electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode offers flexibility and versatility in data retrieval and storage, making it suitable for a wide range of applications.

Technology: CMOS

CMOS technology provides low power consumption along with high speed performance, making this EPROM energy-efficient and reliable.

Memory Density: 1048576 bit

With a high memory density of 1048576 bits, this EPROM can store a large amount of data efficiently and effectively.

Technical Specifications

EPROM TMS27LV010A-30JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3/5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.000025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMS27LV010A-30JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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