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TMS27C512-45JL

Texas Instruments

TMS27C512-45JL by Texas Instruments

TMS27C512-45JL by Texas Instruments is a 64KX8 EPROM with 524288 bit memory density, 450 ns access time, and 3-STATE output. It operates at temperatures b/w 0 to 70 °C and has a supply voltage of 5V. Commonly used in commercial applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,991 parts In-Stock

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Digiode

USA . 2,894 parts In-Stock

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2,894

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 239 parts In-Stock

1+ parts

$1.844

100+ parts

$171.251

1k+ parts

$1.660

10k+ parts

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239

$1.844

$171.251

$1.660

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DigiPath Technology Company

USA . 571 parts In-Stock

1+ parts

$2.031

100+ parts

$1.868

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-

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571

$2.031

$1.868

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ChromeModa Solutions

Germany . 5,028 parts In-Stock

1+ parts

$2.072

100+ parts

$1.699

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5,028

$2.072

$1.699

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IDEA Electronic Components Group

UK . 904 parts In-Stock

1+ parts

$2.072

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$1.865

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904

$2.072

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$1.865

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AZTECH Wire

Italy . 516 parts In-Stock

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$18.511

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516

$18.511

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One Stop Electronics

USA . 1,321 parts In-Stock

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$22.000

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$22.000

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Corphita

USA . 4,371 parts In-Stock

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Overview

Unlock the power of reliable and high-quality memory with the TMS27C512-45JL EPROM from Texas Instruments. Designed with ceramic packaging and a 64KX8 organization, this CMOS technology-based memory chip offers fast access times and a wide operating temperature range for versatile applications. Whether you're in need of secure data storage or efficient program execution, this 524288 bit memory density chip provides the perfect solution. Trust Texas Instruments for top-notch performance and durability in every application.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection against physical damage and temperature variations, making this EPROM highly durable and reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, making it compatible with a wide range of systems and easy to integrate into existing setups.

No. of Terminals: 28

With a sufficient number of terminals, this EPROM allows for versatile connectivity options and ensures a stable and secure connection in the system.

Maximum Operating Temperature: 70 °C

With a high operating temperature range, this EPROM can function reliably in various environmental conditions without overheating or performance issues.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making this EPROM energy-efficient and reliable in processing data accurately.

No. of Words: 65536 words

With a large word capacity, this EPROM enables storing a vast amount of data securely and efficiently, making it suitable for applications that require extensive memory storage.

Maximum Access Time: 450 ns

Fast access time ensures quick retrieval of data, making this EPROM ideal for high-speed operations and applications that demand rapid response times.

Technical Specifications

EPROM TMS27C512-45JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T28

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

EPROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS27C512-45JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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