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5962-8606306YC

STMicroelectronics

5962-8606306YC by STMicroelectronics

5962-8606306YC by STMicroelectronics is a military-grade UVPROM with a 32Kx8 organization, operating at 5V. It features a max access time of 120 ns and operates in asynchronous mode. Ideal for high-reliability applications requiring robust performance in extreme temperatures.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,054 parts In-Stock

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Anansix

USA . 610 parts In-Stock

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610

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Vyrian

USA . 257 parts In-Stock

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257

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Resion

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IDEA Electronic Components Group

UK . 1,962 parts In-Stock

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$3.302

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$2.972

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1,962

$3.302

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$2.972

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MKK Technologies

India . 2,233 parts In-Stock

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$6.209

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DigiPath Technology Company

USA . 2,233 parts In-Stock

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$6.209

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Corphita

USA . 3,095 parts In-Stock

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Parana Technologies

USA . 1,131 parts In-Stock

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$3.948

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Northwest PG Solutions

USA . 1,021 parts In-Stock

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Native Components

USA . 71 parts In-Stock

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Overview

Unlock unparalleled reliability with the 5962-8606306YC EPROM from STMicroelectronics, a leader in innovative semiconductor solutions. Crafted with precision using robust ceramic and metal-sealed materials, this high-performance memory device excels in harsh environments, offering unmatched durability. Ideal for military and aerospace applications, it ensures data integrity and performance, empowering your designs to exceed expectations while delivering exceptional value and peace of mind. Choose STMicroelectronics for cutting-edge technology you can trust!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The robust ceramic and metal-sealed construction enhances durability and protects against environmental factors, making this EPROM suitable for harsh conditions.

Surface Mount: YES

Surface mounting allows for more compact circuit designs and greater efficiency in production, ideal for modern electronics.

Screening Level: 38535Q/M;38534H;883B

High screening levels ensure reliability and performance in military and aerospace applications, making this product trustworthy for critical functions.

Package Shape: RECTANGULAR

The rectangular shape is optimized for space efficiency on PCBs and ensures ease of handling during assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in system design, allowing for simpler and faster data handling.

Input/Output Type: COMMON

Common I/O type enhances compatibility with various systems, simplifying integration into diverse applications.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V operation fits seamlessly into existing power supply configurations, reducing design complexity.

Power Supplies (V): 5

Supports a straightforward power supply requirement, making it easier to implement in various electronic devices.

No. of Terminals: 32

The 32-terminal configuration allows for expanded functionality and connections, suitable for complex applications.

Package Style (Meter): CHIP CARRIER, WINDOW

The window style enables easy inspection and reduces the risk of damage during programming, enhancing operational reliability.

Maximum Operating Temperature: 125 °C

With a high max temperature rating, this EPROM can operate in demanding thermal environments, extending its application range.

Organization: 32KX8

This memory organization offers a balance of capacity and control, suitable for a wide range of applications.

Output Characteristics: 3-STATE

3-state output allows multiple devices to share the same bus, improving design efficiency and reducing conflict in data lines.

Minimum Operating Temperature: -55 °C

With a low temperature rating, this product is capable of functioning in extreme cold, ideal for aerospace and military uses.

Terminal Finish: Gold (Au)

Gold finish provides excellent corrosion resistance and conductivity, ensuring stable and long-lasting connections.

Terminal Position: QUAD

Quad terminal arrangement facilitates efficient layouts and improves connectivity options in PCB designs.

Maximum Seated Height: 3.556 mm

Low seated height aids in space-saving designs, crucial for compact electronic devices.

Width: 11.43 mm

Compact width contributes to efficient use of board space, allowing for more components on a PCB.

Minimum Supply Voltage (Vsup): 4.5 V

Supports lower voltage operation, helping reduce power consumption for energy-conscious applications.

Length: 13.97 mm

Length is optimized for various design scales, providing versatility in product application.

Programming Voltage (V): 12.5

Higher programming voltage allows for reliable erasure and programming cycles, enhancing memory management.

Temperature Grade: MILITARY

Military-grade specification guarantees quality and performance in critical applications, ensuring compliance with stringent standards.

Technology: CMOS

CMOS technology offers low power consumption and high-speed operation, making it ideal for power-sensitive scenarios.

Parallel or Serial: PARALLEL

Parallel configuration allows simultaneous data access, enhancing overall data transfer speeds.

Terminal Form: NO LEAD

No-lead terminals simplify connections and reduce the footprint, making it excellent for modern electronic designs.

Maximum Supply Current: 65 mA

Moderate supply current ensures efficient energy use, balancing performance with power considerations.

No. of Words: 32768 words

32868 words of storage provide a substantial capacity for data applications, suitable for many embedded systems.

Memory Width: 8

An 8-bit memory width is standard for many applications, ensuring compatibility with a wide range of processors and systems.

Terminal Pitch: 1.27 mm

Standard terminal pitch aids in design compatibility and simplifies component placement on PCBs.

No. of Words Code: 32K

A 32K memory code offers excellent storage capacity for a variety of data-intensive applications.

Maximum Supply Voltage (Vsup): 5.5 V

Flexibility in maximum supply voltage permits adaptability to varying supply conditions in different applications.

Memory Density: 262144 bit

A high memory density maximizes storage capacity, supporting larger programs and data storage needs.

Memory IC Type: UVPROM

UVPROM type allows for easy reprogramming through UV exposure, making it convenient for prototype and development stages.

Maximum Standby Current: 0.0003 Amp

Very low standby current helps reduce overall system power consumption during inactive periods, enhancing energy efficiency.

Maximum Access Time: 120 ns

Fast access time ensures quicker data retrieval, improving overall performance in time-sensitive applications.

Technical Specifications

EPROM 5962-8606306YC attributes and parameters. Explore more EPROM devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CQCC-N32

JESD-609 Code:

e4

Length:

13.97 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC32,.45X.55

Package Shape:

Package Style (Meter):

CHIP CARRIER, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

3.556 mm

Maximum Standby Current:

.0003 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Gold (Au)

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.43 mm

Trade Compliance

5962-8606306YC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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