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SMJ27C512-15JM

Texas Instruments

SMJ27C512-15JM by Texas Instruments

The Texas Instruments SMJ27C512-15JM is a 64KX8 EPROM with 150ns access time, operating at 5V. It features a MILITARY temperature grade and 3-STATE output characteristics. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,099 parts In-Stock

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Digiode

USA . 2,852 parts In-Stock

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Euro-Tech

UK . 39 parts In-Stock

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Whistler Technology

UK . 7 parts In-Stock

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Inland Empire Components Inc.

USA . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 162 parts In-Stock

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$2.811

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$3.296

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162

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ChromeModa Solutions

Germany . 2,814 parts In-Stock

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$3.158

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$2.590

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IDEA Electronic Components Group

UK . 417 parts In-Stock

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$3.158

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$2.842

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417

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AZTECH Wire

Italy . 362 parts In-Stock

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$4.927

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362

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One Stop Electronics

USA . 1,058 parts In-Stock

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$7.000

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,671 parts In-Stock

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DigiPath Technology Company

USA . 1,300 parts In-Stock

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$2.847

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Corphita

USA . 1,022 parts In-Stock

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Kepictronics

USA . 420 parts In-Stock

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Overview

Unleash the power of Texas Instruments with the SMJ27C512-15JM EPROM. Crafted with precision and expertise, this product offers unmatched quality and reliability. Ideal for military-grade applications, this memory device provides a seamless experience with its fast access time and low standby current. Elevate your projects with this innovative solution that guarantees optimal performance and efficiency. Trust Texas Instruments to deliver excellence in every aspect, setting a new standard in the industry. Experience the difference with the SMJ27C512-15JM EPROM today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired package body material provides good protection against environmental factors, making this product durable and reliable.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of each memory location, enhancing flexibility and efficiency in data storage and retrieval.

No. of Terminals: 28

Having 28 terminals allows for efficient connectivity and integration into various systems and devices.

Memory Width: 8

With a memory width of 8, this EPROM can store and retrieve data in 8-bit chunks, providing a good balance between storage capacity and data processing efficiency.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed operation, making this EPROM an energy-efficient and reliable choice.

Technical Specifications

EPROM SMJ27C512-15JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.16 mm

Maximum Standby Current:

.000325 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

SMJ27C512-15JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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