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SMJ27C010-25JM

Texas Instruments

SMJ27C010-25JM by Texas Instruments

SMJ27C010-25JM by Texas Instruments is a 128KX8 EPROM with 125°C max temp, -55°C min temp, and 250 ns access time. Ideal for military applications due to its CMOS technology and 1048576 bit memory density.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,717 parts In-Stock

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Vyrian

USA . 2,633 parts In-Stock

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2,633

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Distributors (Availability)

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Parana Technologies

USA . 2,027 parts In-Stock

1+ parts

$3.416

100+ parts

-

1k+ parts

$3.940

10k+ parts

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2,027

$3.416

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$3.940

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DigiPath Technology Company

USA . 1,624 parts In-Stock

1+ parts

$3.761

100+ parts

$3.460

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-

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1,624

$3.761

$3.460

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ChromeModa Solutions

Germany . 6,402 parts In-Stock

1+ parts

$3.838

100+ parts

$3.147

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6,402

$3.838

$3.147

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IDEA Electronic Components Group

UK . 1,569 parts In-Stock

1+ parts

$3.838

100+ parts

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$3.454

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1,569

$3.838

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$3.454

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AZTECH Wire

Italy . 889 parts In-Stock

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$5.844

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889

$5.844

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One Stop Electronics

USA . 725 parts In-Stock

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$12.000

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725

$12.000

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Corphita

USA . 2,787 parts In-Stock

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Overview

Unlock the power of advanced technology with the Texas Instruments SMJ27C010-25JM EPROM. Known for its superior quality and reliability, Texas Instruments is a leader in semiconductor manufacturing. This EPROM offers endless possibilities in applications such as embedded systems, automotive electronics, and consumer devices. With a wide supply voltage range and high-speed performance, this product provides exceptional value and performance to customers seeking cutting-edge solutions. Experience the innovation and precision that Texas Instruments brings to the table with the SMJ27C010-25JM EPROM.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the EPROM, ensuring long-term reliability.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V power supplies, making it easy to integrate into existing systems.

Operating Mode: ASYNCHRONOUS

Allows for independent operations without synchronization, increasing flexibility in usage.

Organization: 128KX8

Offers a high memory organization, suitable for storing a large amount of data efficiently.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, leading to efficient operation.

Maximum Access Time: 250 ns

Provides fast access time, allowing for quick retrieval of data when needed.

Technical Specifications

EPROM SMJ27C010-25JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

SMJ27C010-25JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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